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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors
Jingli Wang, Xuyun Guo, Zhihao Yu, et al.
Advanced Functional Materials (2020) Vol. 30, Iss. 46
Open Access | Times Cited: 77

Showing 26-50 of 77 citing articles:

High drain field impact ionization transistors as ideal switches
Baowei Yuan, Zhibo Chen, Yingxin Chen, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 4
Gate-controlled MoTe2 homojunction for sub-thermionic subthreshold swing tunnel field-effect transistor
Ngoc Thanh Duong, Chulho Park, Duc Hieu Nguyen, et al.
Nano Today (2021) Vol. 40, pp. 101263-101263
Closed Access | Times Cited: 26
Transistors and logic circuits enabled by 2D transition metal dichalcogenides: a state-of-the-art survey
Fangsheng Qian, Xiaobo Bu, Junjie Wang, et al.
Journal of Materials Chemistry C (2022) Vol. 10, Iss. 45, pp. 17002-17026
Closed Access | Times Cited: 17
Ultrafast hot carrier extraction and diffusion at the MoS 2 /Au van der Waals electrode interface
Chengyun Hong, Hyundong Kim, Ye Tao, et al.
Science Advances (2025) Vol. 11, Iss. 1
Closed Access
Capacitorless Dynamic Random Access Memory with 2D Transistors by One-Step Transfer of van der Waals Dielectrics and Electrodes
Jianmiao Guo, Ziyuan Lin, Xiangli Che, et al.
ACS Nano (2025)
Closed Access
Continuously Tuning Negative Capacitance via Field-Driven Polar Skyrmions in Ferroelectric Trilayer Wrinkled Films
Changqing Guo, Shiyu Tang, Deshan Liang, et al.
ACS Nano (2025)
Closed Access
Ferroelectricity in Orthorhombic Zirconia Thin Films
Xianglong Li, Zengxu Xu, Songbai Hu, et al.
Nano Letters (2025)
Closed Access
Negative capacitance tunneling field-effect transistor for logic electronics and photodetection devices
Haoran Yan, Shuaiqin Wu, Yan Chen, et al.
Applied Materials Today (2025) Vol. 44, pp. 102737-102737
Closed Access
Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors
Xiong Xiong, Jiyang Kang, Shiyuan Liu, et al.
Advanced Materials (2021) Vol. 34, Iss. 48
Closed Access | Times Cited: 22
Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf0.5Zr0.5O2
Pavan Pujar, Haewon Cho, Srinivas Gandla, et al.
Advanced Functional Materials (2021) Vol. 31, Iss. 43
Closed Access | Times Cited: 21
5 nm Ultrathin Crystalline Ferroelectric P(VDF‐TrFE)‐Brush Tuned for Hysteresis‐Free Sub 60 mV dec−1 Negative‐Capacitance Transistors
Hyunmin Cho, Hye‐Jin Jin, Sol Lee, et al.
Advanced Materials (2023) Vol. 35, Iss. 22
Closed Access | Times Cited: 9
Carrier Modulation in 2D Transistors by Inserting Interfacial Dielectric Layer for Area‐Efficient Computation
Zheng Bian, Jialei Miao, Tianjiao Zhang, et al.
Small (2023) Vol. 19, Iss. 26
Closed Access | Times Cited: 8
Two-Dimensional Tunneling Memtransistor with Thin-Film Heterostructure for Low-Power Logic-in-Memory Complementary Metal-Oxide Semiconductor
Taoyu Zou, Seongmin Heo, Gwon Byeon, et al.
ACS Nano (2024) Vol. 18, Iss. 21, pp. 13849-13857
Closed Access | Times Cited: 3
WSe2 Negative Capacitance Field-Effect Transistor for Biosensing Applications
Xian Wu, Sen Gao, Lei Xiao, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 32, pp. 42597-42607
Closed Access | Times Cited: 3
Optimization of Subthreshold Swing and Hysteresis in Hf0.5Zr0.5O2-Based MoS2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching
Xiaowei Guo, Fang Wang, Zexia Ma, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 26, pp. 31617-31626
Closed Access | Times Cited: 8
WSe2 N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact
Jianguo Dong, Zhe Sheng, Rui Yu, et al.
Advanced Electronic Materials (2021) Vol. 8, Iss. 2
Closed Access | Times Cited: 18
Ferroelectric‐Like Behavior in TaN/High‐k/Si System Based on Amorphous Oxide
Ze Feng, Yue Peng, Yang Shen, et al.
Advanced Electronic Materials (2021) Vol. 7, Iss. 10
Closed Access | Times Cited: 17
Negative capacitance FETs for energy efficient and hardware secure logic designs
Renuka Chowdary Bheemana, Aditya Japa, Siva Yellampalli, et al.
Microelectronics Journal (2021) Vol. 119, pp. 105320-105320
Closed Access | Times Cited: 17
Contact Properties of Two-Dimensional Ferroelectric α-In2Se3
Bo Liu, Fengjiao Lyu, Bin Tang, et al.
ACS Applied Electronic Materials (2021) Vol. 3, Iss. 10, pp. 4604-4610
Closed Access | Times Cited: 16
TMD material investigation for a low hysteresis vdW NCFET logic transistor
I. Blessing Meshach Dason, N. Kasthuri, D. Nirmal
Semiconductor Science and Technology (2024) Vol. 39, Iss. 4, pp. 045005-045005
Closed Access | Times Cited: 2
Van der Waals integrated plasmonic Au array for self-powered MoS2 photodetector
Mengru Zhang, Guang Zeng, Guangjian Wu, et al.
Applied Physics Letters (2023) Vol. 122, Iss. 25
Closed Access | Times Cited: 6
Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials
Ruosi Chen, Yuerui Lu
Small (2023)
Closed Access | Times Cited: 6
Two‐Dimensional Tellurene Transistors with Low Contact Resistance and Self‐Aligned Catalytic Thinning Process
Ziyuan Lin, Jingli Wang, Jiewei Chen, et al.
Advanced Electronic Materials (2022) Vol. 8, Iss. 10
Closed Access | Times Cited: 9
Paraffin-Enabled Compressive Folding of Two-Dimensional Materials with Controllable Broadening of the Electronic Band Gap
Weifeng Zhang, Zihan Zhao, Yating Yang, et al.
ACS Applied Materials & Interfaces (2021) Vol. 13, Iss. 34, pp. 40922-40931
Closed Access | Times Cited: 11
Top-Gated MoS₂ Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO₂ on Mica
Xiao Zou, Jiyue Zou, Lu Liu, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 6, pp. 3477-3482
Closed Access | Times Cited: 8

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