Open Access Helper

OpenAlex Citation Counts

OpenAlex Citations Logo

OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices
Emanuel Carlos, Rita Branquinho, Rodrigo Martins, et al.
Advanced Materials (2020) Vol. 33, Iss. 7
Closed Access | Times Cited: 160

Showing 26-50 of 160 citing articles:

Design and synthesis of low temperature printed metal oxide memristors
Emanuel Carlos, Jonas Deuermeier, Rita Branquinho, et al.
Journal of Materials Chemistry C (2021) Vol. 9, Iss. 11, pp. 3911-3918
Closed Access | Times Cited: 34
Metal nanoparticles layer boosted resistive switching property in NiFe2O4-based memory devices
Shuting Wang, Xueer Ning, Aize Hao, et al.
Journal of Alloys and Compounds (2022) Vol. 908, pp. 164569-164569
Closed Access | Times Cited: 24
Direct laser writing of copper and copper oxide structures on plastic substrates for memristor devices
Joshua Jones, Monika R. Snowdon, Shasvat Rathod, et al.
Flexible and Printed Electronics (2023) Vol. 8, Iss. 1, pp. 015008-015008
Open Access | Times Cited: 16
Deterministic Conductive Filament Formation and Evolution for Improved Switching Uniformity in Embedded Metal-Oxide-Based Memristors─A Phase-Field Study
Kena Zhang, Panchapakesan Ganesh, Ye Cao
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 17, pp. 21219-21227
Closed Access | Times Cited: 14
A Fully Inkjet-Printed Unipolar Metal Oxide Memristor for Nonvolatile Memory in Printed Electronics
Hongrong Hu, Alexander Scholz, Yan Liu, et al.
IEEE Transactions on Electron Devices (2023) Vol. 70, Iss. 6, pp. 3051-3056
Open Access | Times Cited: 14
A High‐Entropy‐Oxides‐Based Memristor: Outstanding Resistive Switching Performance and Mechanisms in Atomic Structural Evolution
Jing‐Yuan Tsai, Jui‐Yuan Chen, Chun‐Wei Huang, et al.
Advanced Materials (2023) Vol. 35, Iss. 41
Closed Access | Times Cited: 14
Low-Temperature Solution-Based Molybdenum Oxide Memristors
Raquel Azevedo Martins, Emanuel Carlos, Asal Kiazadeh, et al.
ACS Applied Engineering Materials (2024) Vol. 2, Iss. 2, pp. 298-304
Open Access | Times Cited: 5
MAX Phase Ti2AlN for HfO2 Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio
Fabia Farlin Athena, Moses Nnaji, Diego Vaca, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 29
Open Access | Times Cited: 5
Advancements in memory technologies for artificial synapses
Anubha Sehgal, Seema Dhull, Sourajeet Roy, et al.
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 15, pp. 5274-5298
Closed Access | Times Cited: 5
Synaptic transistors with human brain-like fJ energy consumption via double oxide semiconductor engineering for neuromorphic electronics
Seong‐In Cho, Jae Bum Jeon, Joo Hyung Kim, et al.
Journal of Materials Chemistry C (2021) Vol. 9, Iss. 32, pp. 10243-10253
Closed Access | Times Cited: 32
Polarity‐Differentiated Dielectric Materials in Monolayer Graphene Charge‐Regulated Field‐Effect Transistors for an Artificial Reflex Arc and Pain‐Modulation System of the Spinal Cord
Yi Fu, Ya‐Ting Chan, Yi‐Pei Jiang, et al.
Advanced Materials (2022) Vol. 34, Iss. 30
Closed Access | Times Cited: 22
Controllable extrinsic ion transport in two-dimensional perovskite films for reproducible, low-voltage resistive switching
Yichu Zheng, Dongfang Yu, Huijun Lian, et al.
Science China Materials (2023) Vol. 66, Iss. 6, pp. 2383-2392
Open Access | Times Cited: 12
Organic-inorganic FAPbBr3 perovskite based flexible optoelectronic memory device for light-induced multi level resistive switching application
Abubakkar Siddik, Prabir Kumar Haldar, Ujjal Das, et al.
Materials Chemistry and Physics (2023) Vol. 297, pp. 127292-127292
Closed Access | Times Cited: 11
Evolution between Volatile and Nonvolatile Resistive Switching Behaviors in Ag/TiOx/CeOy/F-Doped SnO2 Nanostructure-Based Memristor Devices for Information Processing Applications
Chuan Yang, Bai Sun, Guangdong Zhou, et al.
ACS Applied Nano Materials (2023) Vol. 6, Iss. 10, pp. 8857-8867
Closed Access | Times Cited: 11
A Generalized Polymer Precursor Ink Design for 3D Printing of Functional Metal Oxides
Hehao Chen, Jizhe Wang, Siying Peng, et al.
Nano-Micro Letters (2023) Vol. 15, Iss. 1
Open Access | Times Cited: 11
Gradual conductance modulation by defect reorganization in amorphous oxide memristors
Siqin Li, Jigang Du, Bojing Lu, et al.
Materials Horizons (2023) Vol. 10, Iss. 12, pp. 5643-5655
Closed Access | Times Cited: 11
Artificial Neural Synapses Based on Microfluidic Memristors Prepared by Capillary Tubes and Ionic Liquid
Tongtong Guo, Jianbiao Chen, Chunyan Yang, et al.
The Journal of Physical Chemistry Letters (2024) Vol. 15, Iss. 9, pp. 2542-2549
Closed Access | Times Cited: 4
Molybdenum Disulfide Memristors for Next Generation Memory and Neuromorphic Computing: Progress and Prospects
R. A. Wells, Alex W. Robertson
Advanced Electronic Materials (2024)
Closed Access | Times Cited: 4
A Transient Photoelectric Spiking Neuron Based on a Highly Robust MgO Composite Threshold Switching Memristor for Selective UV Perception
Yaxiong Cao, Rui Wang, Saisai Wang, et al.
Advanced Electronic Materials (2025)
Open Access
Solution Shearing of Sustainable Aluminum Oxide Thin Films for Compliance‐Free, Voltage‐Regulated Multi‐Bit Memristors
Preetam Dacha, Anju Kumari, Darius Pohl, et al.
Advanced Electronic Materials (2025)
Open Access
A NiAl-layered double hydroxides memristor with artificial synapse function and its Boolean logic applications
Ruibo Ai, Wang Luo, Xiaojun Liu, et al.
The Journal of Chemical Physics (2025) Vol. 162, Iss. 4
Closed Access
Exploring Moiré Superlattices and Memristive Switching in Non-van der Waals Twisted Bilayer Bi2O2Se
Subhankar Debnath, Saurav Dey, P. K. Giri
ACS Applied Materials & Interfaces (2025)
Closed Access
Zn2SiO4 Nanotubes through the Kirkendall Effect for Resistive Random-Access Memory Devices
Yi Ju Liao, Wei Shi, Pijus Kundu, et al.
ACS Applied Nano Materials (2025)
Open Access
In-depth physical mechanism analysis of negative differential resistance effect for the voltage controlled Cu2S-based memristor
Yulong Yang, Bai Sun, Shuangsuo Mao, et al.
Materials Today Communications (2025) Vol. 44, pp. 111941-111941
Closed Access
Coexistence of volatile and non-volatile characteristics in SiO2/CoOx memristor for in-materia reservoir computing
Inho Oh, James Jungho Pak
Journal of Alloys and Compounds (2025), pp. 179383-179383
Closed Access

Scroll to top