OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Cataloguing MoSi2N4 and WSi2N4 van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications
Che Chen Tho, Chenjiang Yu, Qin Tang, et al.
Advanced Materials Interfaces (2022) Vol. 10, Iss. 2
Closed Access | Times Cited: 46

Showing 26-50 of 46 citing articles:

Reasonable designing interfacial charge transfer channels in 2D metal–semiconductor contact: A time-domain ultrafast dynamic study
Xianghong Niu, Wenchao Shan, Zifan Niu, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 17
Closed Access

Magneto-electronic and thermopower properties of B, N and Si doped monolayer graphene
Raad Chegel
Diamond and Related Materials (2023) Vol. 137, pp. 110154-110154
Closed Access | Times Cited: 9

Half‐Valley Ohmic Contact: Contact‐Limited Valley‐Contrasting Current Injection
Xukun Feng, Chit Siong Lau, Shi‐Jun Liang, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 16
Closed Access | Times Cited: 9

Electric field and strain tunable band gap and band alignments of MoSi2N4/MSe (M = In, Ga) van der Waals heterostructures
Jin Quan Ng, Qingyun Wu, Yee Sin Ang, et al.
RSC Applied Interfaces (2024) Vol. 1, Iss. 6, pp. 1156-1165
Open Access | Times Cited: 3

Two-Dimensional Ferroelectric C2N/In2Se3 Heterobilayer with Tunable Electronic Property and Photovoltaic Effect
Xiaolin Cai, Guoxing Chen, Rui Li, et al.
Langmuir (2023) Vol. 39, Iss. 41, pp. 14791-14799
Closed Access | Times Cited: 7

Designing CMOS compatible efficient ohmic contacts to WSi2N4via surface-engineered Mo2B monolayer electrodes
Liemao Cao, Xiaohui Deng, Zhenkun Tang, et al.
Journal of Materials Chemistry C (2023) Vol. 12, Iss. 2, pp. 648-654
Closed Access | Times Cited: 7

Computational investigations of the metal/semiconductor NbS2/Boron phosphide van der Waals heterostructure: Effects of the electric fields
Nguyen V. Vinh, Son‐Tung Nguyen, Khang D. Pham
Dalton Transactions (2024) Vol. 53, Iss. 31, pp. 13022-13029
Closed Access | Times Cited: 2

Two-dimensional type-II MSi2N4/InS (M = Mo, W) heterostructures for photocatalysis
Li Shi, Wangping Xu, Xia Qiu, et al.
Applied Physics Letters (2023) Vol. 123, Iss. 13
Closed Access | Times Cited: 5

Electronic Properties of Janus TMD WSSe/WX2 (X = S, Se) Heterostructure by External Strain: A Hybrid Functional Study
Yuanshuang Liu, Zhe Yang, Zhuo Jiang, et al.
ACS Applied Energy Materials (2024) Vol. 7, Iss. 21, pp. 9986-9995
Closed Access | Times Cited: 1

The strain regulated physical properties of PbI2/g-C3N4 for potential optoelectronic device
Xiunan Chen, Yuhong Huang, Zun‐Yi Deng, et al.
Journal of Physics Condensed Matter (2024) Vol. 36, Iss. 25, pp. 255704-255704
Closed Access | Times Cited: 1

Tunable Electronic Properties and Contact Performance of Type‐II HfS2${\rm HfS}_2$/MoS2${\rm MoS}_2$ Van der Waals Heterostructure
Son‐Tung Nguyen, Nguyen N. Hieu, Huy Le‐Quoc, et al.
Advanced Theory and Simulations (2024) Vol. 7, Iss. 7
Closed Access | Times Cited: 1

sp2 to sp3 hybridization transformation in 2D metal-semiconductor contact interface suppresses tunneling barrier and Fermi level pinning simultaneously
Wenchao Shan, Anqi Shi, Zhuorong Zhong, et al.
Nano Research (2024) Vol. 17, Iss. 11, pp. 10227-10234
Closed Access | Times Cited: 1

First-principles study of a novel type-II As2C3/MoSi2N4 heterostructure with high carrier mobility in photocatalytic water splitting
Jialong Mo, Li Li, Xiaodie Li, et al.
International Journal of Hydrogen Energy (2024) Vol. 100, pp. 982-993
Closed Access | Times Cited: 1

Out-of-plane polarization modulated band alignments in β-In2X3/α-In2X3 (X = S and Se) vdW heterostructures
Rui Xiong, Fengpeng Xiao, Jiansen Wen, et al.
Journal of Physics Condensed Matter (2023) Vol. 35, Iss. 48, pp. 485501-485501
Closed Access | Times Cited: 2

Electronic structure and optical spectra of MSi2N4 (M = Mo, Ta, V) materials with single-atom decoration: a first-principles study
T. Wu, Yin‐Song Liao, Jui‐Cheng Kao, et al.
Journal of Materials Chemistry C (2023) Vol. 11, Iss. 43, pp. 15097-15105
Closed Access | Times Cited: 2

Exploring the versatility in the MoSe2/WS2 heterostructures
Tuan V. Vu, Dat D. Vo, Cuong Q. Nguyen, et al.
Dalton Transactions (2024) Vol. 53, Iss. 48, pp. 19342-19350
Closed Access

Achieving Ohmic Contacts in NbS2/MoSe2 van der Waals Heterostructure: A First‐Principles Study
Nguyen Dang Khang, Cuong Q. Nguyen, Chương V. Nguyen
Advanced Theory and Simulations (2023) Vol. 7, Iss. 3
Closed Access | Times Cited: 1

Research on the robust electrical contact properties and favorable transport characteristics of two-dimensional WB4/MoSi2N4 van der Waals heterostructures
Geng Yong Du, Wei Sheng, Ying Xu
Applied Surface Science (2024) Vol. 671, pp. 160698-160698
Closed Access

First-principles Study on the Electronic Structure and Photocatalytic Properties of Novel Two-dimensional JanusCrXCN4(X = Si, Ge)
Mengya Huang, Qi-Zhi Lang, Yi Wang, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 42, pp. 425102-425102
Closed Access

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