Open Access Helper

OpenAlex Citation Counts

OpenAlex Citations Logo

OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors
Jingli Wang, Xuyun Guo, Zhihao Yu, et al.
Advanced Functional Materials (2020) Vol. 30, Iss. 46
Open Access | Times Cited: 77

Showing 51-75 of 77 citing articles:

Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2
Wan‐Ying Du, Xionghui Jia, Zhixuan Cheng, et al.
iScience (2021) Vol. 24, Iss. 12, pp. 103491-103491
Open Access | Times Cited: 10
Low‐Power Logic‐in‐Memory Complementary Inverter Based on p‐WSe2 and n‐WS2
Hongzhi Shen, Junwen Ren, Junchao Hu, et al.
Advanced Electronic Materials (2022) Vol. 8, Iss. 12
Open Access | Times Cited: 7
Fully Printed Negative-Capacitance Field-Effect Transistors with Ultralow Subthreshold Swing and High Inverter Signal Gain
Jyoti Ranjan Pradhan, Subho Dasgupta
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 30, pp. 39517-39527
Closed Access | Times Cited: 1
Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films
Feng Yang
Advanced Electronic Materials (2024)
Open Access | Times Cited: 1
P-Type Vertical FETs Realized by Using Fermi-Level Pinning-Free 2D Metallic Electrodes
Hyokwang Park, Hoseong Shin, Nasir Ali, et al.
Nano Letters (2024)
Closed Access | Times Cited: 1
High-Performance WSe₂ n-Type Field-Effect Transistors Enabled by InOₓ Damage-Free Doping
Hao Huang, Leixi Wang, Yawei Lv, et al.
IEEE Electron Device Letters (2021) Vol. 42, Iss. 7, pp. 1081-1084
Closed Access | Times Cited: 8
On‐Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors
Zichao Ma, Cristine Jin Estrada, Kui Gong, et al.
Advanced Electronic Materials (2022) Vol. 8, Iss. 10
Closed Access | Times Cited: 6
Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe2
Zhixuan Cheng, Xionghui Jia, Xing Cheng, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 10
Open Access | Times Cited: 3
Strain engineered C31 field-effect-transistors: a new strategy to break 60 mV/decade by using electron injection from intrinsic isolated states
Qianwen Wang, Pengpeng Sang, Fei Wang, et al.
Applied Physics Express (2021) Vol. 14, Iss. 7, pp. 074003-074003
Closed Access | Times Cited: 7
Weakly negative permittivity with an extremely low plasma frequency in polyvinyl alcohol/graphene membranous metacomposites
Zongxiang Wang, Kai Sun, Jiahong Tian, et al.
Journal of Materials Science Materials in Electronics (2021) Vol. 32, Iss. 18, pp. 23081-23089
Closed Access | Times Cited: 7
The floating body effect of a WSe2 transistor with volatile memory performance
Zhanpeng Wang, Peng Xie, Jing‐Yu Mao, et al.
Materials Horizons (2022) Vol. 9, Iss. 7, pp. 1878-1887
Closed Access | Times Cited: 5
Logic and memory characteristics of an inverter comprising a feedback FET and a MOSFET
Eunhyeok Lim, Jaemin Son, Kyoungah Cho, et al.
Semiconductor Science and Technology (2022) Vol. 37, Iss. 6, pp. 065025-065025
Closed Access | Times Cited: 4
Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 Barristors
Dong‐Ho Shin, Young Gyu You, Sung Il Jo, et al.
Nanomaterials (2022) Vol. 12, Iss. 21, pp. 3820-3820
Open Access | Times Cited: 4
Locally Thinned, Core–Shell Nanowire-Integrated Multi-gate MoS2 Transistors for Active Control of Extendable Logic
Yu Xiao, Guisheng Zou, Jinpeng Huo, et al.
ACS Applied Materials & Interfaces (2022) Vol. 15, Iss. 1, pp. 1563-1573
Closed Access | Times Cited: 4
Largely Reducing the Contact Resistance of Molybdenum Ditelluride by In Situ Potassium Modification
Xiangna Cong, Muhammad Najeeb Ullah Shah, Yue Zheng, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 7
Open Access | Times Cited: 2
Inkjet‐Printed, Wafer‐Scale Organic Schottky‐Gate Transistors toward Single‐Battery‐Driven Integrated Logic
Ziqian Hao, Jun Qian, Yating Li, et al.
Advanced Electronic Materials (2023) Vol. 10, Iss. 1
Open Access | Times Cited: 2
MoS2 transistors gated by ferroelectric HfZrO2 with MoS2/mica heterojunction interface
Xiao Ping Zou, Jiyue Zou, Lu Liu, et al.
Nanotechnology (2021) Vol. 32, Iss. 49, pp. 495201-495201
Closed Access | Times Cited: 4
Effects of S-vacancy on electrical performance of monolayer TMD nanoribbons field-effect transistor
Manouchehr Hosseini, Ali Akbarikho, Shoeib Babaee Touski
Materials Science in Semiconductor Processing (2022) Vol. 152, pp. 107080-107080
Closed Access | Times Cited: 3
Performance optimization of GaAs NCFET with a complex oxide ferroelectric gate ​
Tingting Jia, Hongping Li, Ziwei Yu, et al.
Research Square (Research Square) (2024)
Open Access
Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits
Liang Meng, Han Yan, Nasrullah Wazir, et al.
Nanomaterials (2024) Vol. 14, Iss. 17, pp. 1408-1408
Open Access
Drain self-blocking ambipolar transistors for complementary circuit applications
Chen Pan, Pincheng Su, Wentao Yu, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 18
Closed Access
HfO2–ZrO2 Superlattice Ferroelectric Films as Gates for 2D MoS2-Based Negative-Capacitance Transistors with Enhanced Subthreshold and Endurance Characteristics
Jiyue Zou, Xiao Ping Zou, Jing-Ping Xu, et al.
ACS Applied Nano Materials (2024)
Closed Access
Contact engineering for two-dimensional van der Waals semiconductors
Jiachen Tang, S. Li, Li Zhan, et al.
Materials Today Electronics (2024), pp. 100132-100132
Open Access
MoS2 negative-capacitance transistors with steep slope and negligible hysteresis by using monolayer Al1-Zr O as gate dielectric plus NH3-plasma treatment
Xingjuan Song, Lu Liu, Jing-Ping Xu
Applied Surface Science (2021) Vol. 576, pp. 151882-151882
Closed Access | Times Cited: 2
Simulation analysis of transient output characteristics of inverter with asynchronous motor load based on second-order filtering link
Xinyu Hong, Changqing Zhu, Shu An, et al.
Sustainable Energy Technologies and Assessments (2021) Vol. 49, pp. 101725-101725
Closed Access | Times Cited: 1

Scroll to top