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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors
Jingli Wang, Xuyun Guo, Zhihao Yu, et al.
Advanced Functional Materials (2020) Vol. 30, Iss. 46
Open Access | Times Cited: 77

Showing 1-25 of 77 citing articles:

Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale
Yang Xiang-Dong, Jia Li, Rong Song, et al.
Nature Nanotechnology (2023) Vol. 18, Iss. 5, pp. 471-478
Closed Access | Times Cited: 87
The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms
Yang Shen, Zuoyuan Dong, Yabin Sun, et al.
Advanced Materials (2022) Vol. 34, Iss. 48
Closed Access | Times Cited: 83
A Reconfigurable Two‐WSe 2 ‐Transistor Synaptic Cell for Reinforcement Learning
Yue Zhou, Yasai Wang, Fuwei Zhuge, et al.
Advanced Materials (2022) Vol. 34, Iss. 48
Closed Access | Times Cited: 78
Two-dimensional materials for future information technology: status and prospects
Hao Qiu, Zhihao Yu, Tiange Zhao, et al.
Science China Information Sciences (2024) Vol. 67, Iss. 6
Open Access | Times Cited: 30
Tuning Polarity in WSe2/AlScN FeFETs via Contact Engineering
Kwan‐Ho Kim, Seunguk Song, Bumho Kim, et al.
ACS Nano (2024) Vol. 18, Iss. 5, pp. 4180-4188
Closed Access | Times Cited: 27
van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides
Likuan Ma, Yiliu Wang, Yuan Liu
Chemical Reviews (2024) Vol. 124, Iss. 5, pp. 2583-2616
Closed Access | Times Cited: 25
Origins of genuine Ohmic van der Waals contact between indium and MoS2
Bum-Kyu Kim, Tae-Hyung Kim, Dong-Hwan Choi, et al.
npj 2D Materials and Applications (2021) Vol. 5, Iss. 1
Open Access | Times Cited: 67
2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices
Jiandong Yao, Guowei Yang
Advanced Science (2021) Vol. 9, Iss. 1
Open Access | Times Cited: 62
Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope
Jingli Wang, Lejuan Cai, Jiewei Chen, et al.
Science Advances (2021) Vol. 7, Iss. 44
Open Access | Times Cited: 59
P‐Type 2D Semiconductors for Future Electronics
Yunhai Xiong, Duo Xu, Yiping Feng, et al.
Advanced Materials (2022) Vol. 35, Iss. 50
Closed Access | Times Cited: 52
Bio-inspired artificial synaptic transistors: evolution from innovative basic units to system integration
Xin Wang, Yixin Ran, Xiaoqian Li, et al.
Materials Horizons (2023) Vol. 10, Iss. 9, pp. 3269-3292
Closed Access | Times Cited: 28
Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?
Seunguk Song, Mahfujur Rahaman, Deep Jariwala
ACS Nano (2024) Vol. 18, Iss. 17, pp. 10955-10978
Closed Access | Times Cited: 13
Beyond Moore's law – A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics
Sresta Valasa, Venkata Ramakrishna Kotha, Vadthiya Narendar
Materials Science in Semiconductor Processing (2024) Vol. 173, pp. 108116-108116
Closed Access | Times Cited: 10
Energy-efficient transistors: suppressing the subthreshold swing below the physical limit
Yongbiao Zhai, Zihao Feng, Ye Zhou, et al.
Materials Horizons (2021) Vol. 8, Iss. 6, pp. 1601-1617
Closed Access | Times Cited: 43
Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts
Tien Dat Ngo, Zheng Yang, Myeong‐jin Lee, et al.
Advanced Electronic Materials (2021) Vol. 7, Iss. 5
Closed Access | Times Cited: 43
High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS2 and p‐MoTe2
Xionghui Jia, Zhixuan Cheng, Bo Han, et al.
Small (2023) Vol. 19, Iss. 19
Closed Access | Times Cited: 18
Temperature behavior and logic circuit applications of InAs nanowire-based field-effect transistors
Loredana Viscardi, Enver Faella, Kimberly Intonti, et al.
Materials Science in Semiconductor Processing (2024) Vol. 173, pp. 108167-108167
Open Access | Times Cited: 7
Substitutionally Doped MoSe2 for High‐Performance Electronics and Optoelectronics
Fang Zhong, Jiafu Ye, Ting He, et al.
Small (2021) Vol. 17, Iss. 47
Closed Access | Times Cited: 34
Atomic‐scale interface engineering for two‐dimensional materials based field‐effect transistors
Xiangyu Hou, Tengyu Jin, Yue Zheng, et al.
SmartMat (2023) Vol. 5, Iss. 4
Open Access | Times Cited: 15
Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction
Hongye Chen, Tianqing Wan, Yue Zhou, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 15
Closed Access | Times Cited: 15
Inkjet‐Printed MoS2 Transistors with Predominantly Intraflake Transport
Sandeep Kumar Mondal, Ananya Biswas, Jyoti Ranjan Pradhan, et al.
Small Methods (2021) Vol. 5, Iss. 12
Closed Access | Times Cited: 29
Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors
Zahir Muhammad, Yan Wang, Yue Zhang, et al.
Advanced Materials Technologies (2022) Vol. 8, Iss. 2
Closed Access | Times Cited: 21
Effectively Suppressed Short-Channel Effects in Small-Size MoS2 Transistors by Introducing Negative-Capacitance Effect Resulted From Ferroelectric HfZrO2 Film
Jiyue Zou, Xiao Zou, Lu Liu, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 2, pp. 1185-1190
Closed Access | Times Cited: 4
Complementary negative capacitance field-effect transistors based on vertically stacked van der Waals heterostructures
Siqing Zhang, Zheng‐Dong Luo, Xuetao Gan, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 9
Closed Access | Times Cited: 4
All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope
Jiayang Hu, Hanxi Li, Anzhe Chen, et al.
ACS Nano (2024) Vol. 18, Iss. 31, pp. 20236-20246
Closed Access | Times Cited: 4
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