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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf0.5Zr0.5O2
Pavan Pujar, Haewon Cho, Srinivas Gandla, et al.
Advanced Functional Materials (2021) Vol. 31, Iss. 43
Closed Access | Times Cited: 21

Showing 21 citing articles:

Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi‐Functional Optoelectronic Sensors
Riya Dutta, Arindam Bala, Anamika Sen, et al.
Advanced Materials (2023) Vol. 35, Iss. 46
Closed Access | Times Cited: 57
Excellent energy storage and hardness performance of Sr0.7Bi0.2TiO3 ceramics fabricated by solution combustion-synthesized nanopowders
Chengyang Zuo, Shilin Yang, Zhiqin Cao, et al.
Chemical Engineering Journal (2022) Vol. 442, pp. 136330-136330
Closed Access | Times Cited: 59
Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware
Dovydas Joksas, AbdulAziz AlMutairi, Oscar Lee, et al.
Advanced Intelligent Systems (2022) Vol. 4, Iss. 8
Open Access | Times Cited: 35
Van der Waals Ferroelectric CuCrP2S6‐Enabled Hysteresis‐Free Negative Capacitance Field‐Effect Transistors
Han Chen, Yinfeng Long, Shiyu Zhang, et al.
Advanced Materials (2025)
Closed Access
Enhancing Nonenzymatic Glucose Detection Through Cobalt‐Substituted Hafnia
Jeonghyeon Oh, Andrew T. S. Wee, Eun‐Byeol Park, et al.
Advanced Science (2025)
Open Access
High-Performance Negative Capacitance Field-Effect Transistors with Synthetic Monolayer MoS2
Moonyoung Jung, Hyo‐Bae Kim, Yungyeong Park, et al.
ACS Nano (2025)
Closed Access
Ferroelectrics Based on HfO2 Film
Chong‐Myeong Song, Hyuk‐Jun Kwon
Electronics (2021) Vol. 10, Iss. 22, pp. 2759-2759
Open Access | Times Cited: 21
WSe2 Negative Capacitance Field-Effect Transistor for Biosensing Applications
Xian Wu, Sen Gao, Lei Xiao, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 32, pp. 42597-42607
Closed Access | Times Cited: 3
Transparent and Flexible Copper Iodide Resistive Memories Processed with a Dissolution-Recrystallization Solution Technique
Arindam Bala, Pavan Pujar, Debottam Daw, et al.
ACS Applied Electronic Materials (2022) Vol. 4, Iss. 8, pp. 3973-3979
Closed Access | Times Cited: 14
Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor
Debottam Daw, Houcine Bouzid, Moonyoung Jung, et al.
Advanced Materials (2023) Vol. 36, Iss. 13
Closed Access | Times Cited: 8
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors
Pavan Pujar, Haewon Cho, Young‐Hoon Kim, et al.
ACS Nano (2023) Vol. 17, Iss. 19, pp. 19076-19086
Open Access | Times Cited: 7
Improving the Ferroelectric Properties of Nd:HfO₂ Thin Films by Stacking Hf₀.₅Zr₀.₅O₂ Interlayers
Yongguang Xiao, Yong Jiang, Lisha Yang, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 6, pp. 3620-3626
Closed Access | Times Cited: 2
Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials
Ruosi Chen, Yuerui Lu
Small (2023)
Closed Access | Times Cited: 6
Phases in HfO2-Based Ferroelectric Thin Films and Their Integration in Low-Power Devices
Pavan Pujar, Haewon Cho, Sunkook Kim
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 1, pp. 11-20
Closed Access | Times Cited: 5
Dielectric thin film fabrication, recent developments and their applications
Bibekananda Panda, Nandita Palit
Elsevier eBooks (2023), pp. 200-227
Closed Access | Times Cited: 4
Fully Printed Negative-Capacitance Field-Effect Transistors with Ultralow Subthreshold Swing and High Inverter Signal Gain
Jyoti Ranjan Pradhan, Subho Dasgupta
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 30, pp. 39517-39527
Closed Access | Times Cited: 1
Expeditiously Crystallized Pure Orthorhombic-Hf0.5Zr0.5O2for Negative Capacitance Field Effect Transistors
Haewon Cho, Pavan Pujar, Minsu Choi, et al.
ACS Applied Materials & Interfaces (2021) Vol. 13, Iss. 50, pp. 60250-60260
Closed Access | Times Cited: 8
Observation of stabilized negative capacitance effect in hafnium-based ferroic films
Leilei Qiao, Ruiting Zhao, Cheng Song, et al.
Materials Futures (2023) Vol. 3, Iss. 1, pp. 011001-011001
Open Access | Times Cited: 2
Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter
Haewon Cho, Pavan Pujar, Yong In Cho, et al.
Advanced Electronic Materials (2021) Vol. 8, Iss. 4
Closed Access | Times Cited: 5
High‐Performance Monolayer SiMe‐Graphene n‐Type Field‐Effect Transistors with Low Supply Voltage and High On‐State Current in Sub‐5 nm Gate Length
Wenkai Zhao, Dongqing Zou, Zhaopeng Sun, et al.
Advanced Electronic Materials (2022) Vol. 8, Iss. 7
Closed Access | Times Cited: 3
Channel length dependency in Sn: ZnO/ZrO2 thin film transistors: a performance analysis
Parashurama Salunkhe, Prashant Bhat, Dhananjaya Kekuda
Applied Physics A (2024) Vol. 130, Iss. 12
Closed Access
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