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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9
Gichang Noh, Hwayoung Song, Heenang Choi, et al.
Advanced Materials (2022) Vol. 34, Iss. 41
Closed Access | Times Cited: 27

Showing 1-25 of 27 citing articles:

Vapour-phase deposition of two-dimensional layered chalcogenides
Tianyi Zhang, Jiangtao Wang, Peng Wu, et al.
Nature Reviews Materials (2023) Vol. 8, Iss. 12, pp. 799-821
Closed Access | Times Cited: 44
Two‐Terminal Perovskite Optoelectronic Synapse for Rapid Trained Neuromorphic Computation with High Accuracy
Linqi Guo, Haoxuan Sun, Liangliang Min, et al.
Advanced Materials (2024) Vol. 36, Iss. 27
Closed Access | Times Cited: 18
An Optoelectronic Synapse Based on Two‐Dimensional Violet Phosphorus Heterostructure
Xiaoxian Liu, Shuiyuan Wang, Ziye Di, et al.
Advanced Science (2023) Vol. 10, Iss. 22
Open Access | Times Cited: 36
Low-dimensional van der Waals materials for linear-polarization-sensitive photodetection: materials, polarizing strategies and applications
Yuhang Ma, Huaxin Yi, Huanrong Liang, et al.
Materials Futures (2023) Vol. 3, Iss. 1, pp. 012301-012301
Open Access | Times Cited: 31
Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications
Huaxin Yi, Churong Ma, Wan Wang, et al.
Materials Horizons (2023) Vol. 10, Iss. 9, pp. 3369-3381
Closed Access | Times Cited: 27
An Optical Artificial Synapse Based on Single‐Crystal Se‐Vacancy Bi2O2Se
Xuanyu Ren, Xinxin He, Xingqi Li, et al.
Advanced Optical Materials (2024) Vol. 12, Iss. 14
Closed Access | Times Cited: 12
Insights into synaptic functionality and resistive switching in lead iodide flexible memristor devices
Muskan Jain, Mayur Jagdishbhai Patel, Lingli Liu, et al.
Nanoscale Horizons (2024) Vol. 9, Iss. 3, pp. 438-448
Closed Access | Times Cited: 12
Hardware Implementation of Network Connectivity Relationships Using 2D hBN‐Based Artificial Neuron and Synaptic Devices
Yooyeon Jo, Dong Yeon Woo, Gichang Noh, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 10
Open Access | Times Cited: 20
Layered Wide Bandgap Semiconductor GaPS4 as a Charge‐Trapping Medium for Use in High‐Temperature Artificial Synaptic Applications
Dingwen Cao, Yong Yan, Mengna Wang, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 28
Closed Access | Times Cited: 8
Grain boundary control for high-reliability HfO2-based RRAM
Dong Geun Jeong, Eunpyo Park, Yooyeon Jo, et al.
Chaos Solitons & Fractals (2024) Vol. 183, pp. 114956-114956
Closed Access | Times Cited: 8
Programmable Optoelectronic Synaptic Transistors Based on MoS2/Ta2NiS5 Heterojunction for Energy‐Efficient Neuromorphic Optical Operation
Junru An, Nan Zhang, Fan Tan, et al.
Small (2024)
Closed Access | Times Cited: 7
Highly Reliable Van Der Waals Memory Boosted by a Single 2D Charge Trap Medium
Chao Liu, Jie Pan, Qihui Yuan, et al.
Advanced Materials (2023) Vol. 36, Iss. 3
Closed Access | Times Cited: 16
The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices
Yuyu He, Qi Xu, Xinyue Dong, et al.
ACS Nano (2023) Vol. 17, Iss. 11, pp. 10783-10791
Closed Access | Times Cited: 15
Recent Advances in the Preparation and Application of Two-Dimensional Nanomaterials
Ying-Tong Guo, Shasha Yi
Materials (2023) Vol. 16, Iss. 17, pp. 5798-5798
Open Access | Times Cited: 15
Advanced Strategies in Synthesis of Two‐Dimensional Materials with Different Compositions and Phases
Yang Yang, Lin Jia, Dainan Wang, et al.
Small Methods (2023) Vol. 7, Iss. 4
Closed Access | Times Cited: 14
Modern innovations in the provision and efficient application of 2D inorganic nanoscale materials
Muhammad Naeem Ayub, Umer Shahzad, Mohsin Saeed, et al.
Reviews in Inorganic Chemistry (2024) Vol. 45, Iss. 1, pp. 175-206
Closed Access | Times Cited: 5
Understanding the growth mechanisms of γ-GeSe for polymorph-selective large-area deposition
Joong‐Eon Jung, Sol Lee, Hani Kang, et al.
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 26, pp. 9662-9668
Closed Access | Times Cited: 5
Contact‐Engineered Oxide Memtransistors for Homeostasis‐Based High‐Linearity and Precision Neuromorphic Computing
San Nam, Dong Hyun Kang, Seong‐Pil Jeon, et al.
Small (2025)
Closed Access
Layered Germanium–Selenium Compounds as Phonon–Glass Electron–Crystals: A Pathway to Enhance the Thermoelectric Performance
Zhen Tong, Yatian Zhang, Thomas Frauenheim, et al.
Nano Letters (2025)
Closed Access
Wrinkled Rhenium Disulfide for Anisotropic Nonvolatile Memory and Multiple Artificial Neuromorphic Synapses
Yujia Chen, Zhengjie Wang, Jiantao Du, et al.
ACS Nano (2024) Vol. 18, Iss. 44, pp. 30871-30883
Closed Access | Times Cited: 3
Controllable memory window in two-dimensional hybrid van der Waals heterostructured devices
Huijuan Zhao, Jingxuan Ma, Shuhan Li, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 17
Closed Access | Times Cited: 1
Effects of voltage schemes on the conductance modulation of artificial synaptic device based on 2D hBN memristor: Its applications for pattern classifications
Yooyeon Jo, Gichang Noh, Eunpyo Park, et al.
Chaos Solitons & Fractals (2024) Vol. 187, pp. 115390-115390
Closed Access | Times Cited: 1
Dynamic FeOx/FeWOx nanocomposite memristor for neuromorphic and reservoir computing
Muhammad Ismail, Maria Rasheed, Yongjin Park, et al.
Nanoscale (2024)
Closed Access | Times Cited: 1
Synaptic MoS2 transistors based on charge trapping two-dimensionally confined in Sr2-Co Nb3O10 nanosheets
DaYea Oh, Haena Yim, So Yeon Yoo, et al.
Materials Science in Semiconductor Processing (2023) Vol. 160, pp. 107424-107424
Open Access | Times Cited: 2
Memory Window Ratio Enhancement of p-Type WSe2 Memtransistors Using Dielectric GeSe2 Nanosheets with Asymmetric Interfaces for Neuromorphic Computing
Mengna Wang, Yingjie Lv, Shasha Li, et al.
ACS Applied Nano Materials (2023) Vol. 6, Iss. 17, pp. 15632-15640
Closed Access | Times Cited: 1
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