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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
Wantang Wang, Xuesong Lu, Xinke Wu, et al.
Advanced Materials Interfaces (2023) Vol. 10, Iss. 13
Open Access | Times Cited: 51

Showing 1-25 of 51 citing articles:

A novel liquid film shearing polishing technique for silicon carbide and its processing damage mechanisms
Hongyu Chen, Hongbing Wan, Binbin Hong, et al.
Applied Surface Science (2025) Vol. 688, pp. 162317-162317
Closed Access | Times Cited: 8
Predictive models for the surface roughness and subsurface damage depth of semiconductor materials in precision grinding
Shang Gao, Haoxiang Wang, Han Huang, et al.
International Journal of Extreme Manufacturing (2025) Vol. 7, Iss. 3, pp. 035103-035103
Open Access | Times Cited: 5
Photocatalytic assisted chemical mechanical polishing for silicon carbide using developed ceria coated diamond core-shell abrasives
Xiaoxiao Zhu, Yuziyu Gui, Hao Fu, et al.
Tribology International (2024) Vol. 197, pp. 109827-109827
Closed Access | Times Cited: 11
Surface microtopography evolution of monocrystalline silicon in chemical mechanical polishing
Ke Yang, Hongyu Di, Ning Huang, et al.
Journal of Materials Processing Technology (2024) Vol. 328, pp. 118387-118387
Closed Access | Times Cited: 9
Mechanism of friction-induced chemical reaction high-efficient polishing single crystal 4H-SiC wafer using pure iron
Min Wu, Hui Huang, Yueqin Wu, et al.
Tribology International (2024) Vol. 193, pp. 109450-109450
Closed Access | Times Cited: 8
Synthesis of Al2O3@MnO2 composite abrasives and their chemical mechanical polishing performance on silicon carbide (SiC)
Peijia Zhang, Hong Lei, Zefang Zhang, et al.
Ceramics International (2024) Vol. 50, Iss. 11, pp. 19935-19944
Closed Access | Times Cited: 8
Spectral stability of V2 centres in sub-micron 4H-SiC membranes
Jonah Heiler, Jonathan Körber, Erik Hesselmeier, et al.
npj Quantum Materials (2024) Vol. 9, Iss. 1
Open Access | Times Cited: 8
Preparation of SiO2@MnO2 composite abrasives and their performance in chemical-mechanical polishing of SiC substrates
Ruixing Yang, Hong Lei, Jianhua Zhang
Ceramics International (2024) Vol. 50, Iss. 19, pp. 34796-34805
Closed Access | Times Cited: 6
Origins and characterization techniques of stress in SiC crystals: A review
Jiaqi Tian, Xuejian Xie, Laibin Zhao, et al.
Progress in Crystal Growth and Characterization of Materials (2024) Vol. 70, Iss. 1, pp. 100616-100616
Closed Access | Times Cited: 5
Review on chemical mechanical polishing for atomic surfaces using advanced rare earth abrasives
X. Chen, Zhenyu Zhang, Feng Zhao, et al.
Journal of Physics D Applied Physics (2024) Vol. 58, Iss. 2, pp. 023004-023004
Closed Access | Times Cited: 5
Enhancement mechanism of Y-doped Ce1−xYxO2 for photocatalytic-assisted chemical-mechanical polishing
Ning Xu, Yuxin Luo, Jiahui Ma, et al.
Materials Today Communications (2023) Vol. 38, pp. 107791-107791
Closed Access | Times Cited: 12
Compound mechanical and chemical-mechanical polishing processing technique for single-crystal silicon carbide
Xinxing Ban, Zhuangzhi Tian, Jianhui Zhu, et al.
Precision Engineering (2023) Vol. 86, pp. 160-169
Closed Access | Times Cited: 11
Scratching properties of 4H–SiC single crystal after oxidation under different conditions
Xinxing Ban, Zhuangzhi Tian, Shaodong Zheng, et al.
Wear (2024) Vol. 556-557, pp. 205503-205503
Closed Access | Times Cited: 4
Initial dissociative absorption study of HF etchants on Si (0001) and C (0001¯) faces with differently terminated 4H-SiC
Yuncai Jiang, Shuangying Lei, Zai‐Fa Zhou, et al.
Surfaces and Interfaces (2025), pp. 105949-105949
Closed Access
Mechanism of OH*-Modified 4H-SiC Surface with Scratches Based on ReaxFF MD Simulation
Dongxiao Yan, Hui Huang, Mingpu Xue, et al.
Micromachines (2025) Vol. 16, Iss. 2, pp. 184-184
Open Access
Mullite-based abrasives for chemical mechanical polishing of silicon carbide
Hanqi Xu, LI De-xiang, Zhuojie Wang, et al.
Applied Surface Science (2025), pp. 162714-162714
Closed Access
Precision material removal and hardness reduction in silicon carbide using ultraviolet nanosecond pulse laser
Hsin‐Yi Tsai, Yu–Hsuan Lin, Kuo Cheng Huang, et al.
Applied Physics A (2025) Vol. 131, Iss. 3
Open Access
Dual impact of Nd3+ doping on CeO2 abrasives: enhancing chemical and mechanical effects in chemical–mechanical polishing
Yesheng Zhang, Lei Hong, Jianhua Zhang, et al.
Surface Science and Technology (2025) Vol. 3, Iss. 1
Open Access
Effect of Structurally Modified Toluene Diisocyanate-Based Polyurethane Pads on Chemical Mechanical Polishing of 4H Silicon Carbide Substrate
Yiming Meng, Shanduan Zhang, Zefang Zhang
Polymers (2025) Vol. 17, Iss. 5, pp. 613-613
Open Access
High-temperature optoelectronic synaptic devices based on 4H-SiC
Mingxuan Bu, Yue Wang, Zhenyi Ni, et al.
Science China Information Sciences (2025) Vol. 68, Iss. 4
Closed Access
Investigation of the machinability of (001) single-crystal β-Ga2O3 via tribological methodology
Shuo Li, Peng Gao, Guosong Zeng
Nanotechnology and Precision Engineering (2025) Vol. 8, Iss. 3
Open Access
Exploring the Transverse Thermoelectric Effect of 4H-SiC Single Crystal for the Applications of High-Energy Infrared Laser Detection
Yahui Huang, Jianyu Yang, Yong Wang, et al.
ACS Photonics (2025)
Closed Access
Investigation of the Visible Photocatalytic–Fenton Reactive Composite Polishing Process for Single-Crystal SiC Wafers Based on Response Surface Methodology
Zhiqiang Han, B. Ran, Jisheng Pan, et al.
Micromachines (2025) Vol. 16, Iss. 4, pp. 380-380
Open Access
Insights into the effect of polishing tool patterns on surface integrity of 4H-SiC substrates in photoelectrochemical mechanical polishing
Yang Zhao, Renke Kang, Jiajian Feng, et al.
Ceramics International (2025)
Closed Access
Effect of Voltage on Electrochemical Mechanical Polishing (ECMP) of 4H-SiC with Fixed Abrasives
Pengfei Wu, Dongdong Zhao, Ning Liu, et al.
Journal of Materials Research and Technology (2025) Vol. 36, pp. 7807-7817
Open Access
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