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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Tunable Electronic Properties of Novel 2D Janus MSiGeN4 (M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field
Vo T.T., Tran P. T. Linh, Cuong Q. Nguyen, et al.
Advanced Theory and Simulations (2022) Vol. 5, Iss. 11
Closed Access | Times Cited: 18

Showing 18 citing articles:

Novel valleytronic and piezoelectric properties coexisting in Janus MoAZ3H (A = Si, or Ge; Z = N, P, or As) monolayers
Xiaolin Cai, Guoxing Chen, Rui Li, et al.
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 13, pp. 4682-4689
Closed Access | Times Cited: 10
A first-principles prediction of novel Janus ZrGeZ3H (Z = N, P, and As) monolayers: Raman active modes, piezoelectric responses, electronic properties, and carrier mobility
Tuan V. Vu, Vo T. T. Vi, Thi Hiep Nguyen, et al.
RSC Advances (2024) Vol. 14, Iss. 30, pp. 21982-21990
Open Access | Times Cited: 7
Two-dimensional Janus MGeSiP4 (M = Ti, Zr, and Hf) with an indirect band gap and high carrier mobilities: first-principles calculations
Thi Hiep Nguyen, Nguyen Pham Quynh Anh, Huynh V. Phuc, et al.
Physical Chemistry Chemical Physics (2023) Vol. 25, Iss. 12, pp. 8779-8788
Closed Access | Times Cited: 14
The stability and electronic properties of hydrogenated Janus MSiGeZ4 (M = Sc-Zn, Y–Ag, Hf–Au; Z = N, P) monolayers: A first-principles study
Jiamin Zeng, Yi Wang, Yumei Zhang, et al.
Results in Physics (2023) Vol. 52, pp. 106859-106859
Open Access | Times Cited: 11
Prediction of Nontrivial Topological Phases and Rashba Spin-Splitting in BaABTe4 Janus Monolayers (A, B = Al, Ga, In, or Tl)
Joel D’Souza, Rovi Angelo B. Villaos, Aniceto B. Maghirang, et al.
ACS Omega (2025)
Open Access
Tuning electronic and optical properties of narrow band gap 2D WSn2X4 (X=P, As) materials
Ata Ur Rahman, Ghulam Hussain, Imad Khan, et al.
Computational Materials Science (2025) Vol. 255, pp. 113899-113899
Closed Access
XMoSiN2 (X = S, Se, Te): A novel 2D Janus semiconductor with ultra-high carrier mobility and excellent thermoelectric performance
Chang-Hao Ding, Zhi-Fu Duan, Zhong‐Ke Ding, et al.
EPL (Europhysics Letters) (2023) Vol. 143, Iss. 1, pp. 16002-16002
Closed Access | Times Cited: 10
A theoretical prediction of thermoelectrical properties for novel two-dimensional monolayer ZrSn2N4
S. M. Feng, Hangbo Qi, Wenguang Hu, et al.
Journal of Materials Chemistry A (2024) Vol. 12, Iss. 22, pp. 13474-13487
Closed Access | Times Cited: 3
Structural, electronic, and transport properties of Janus XMoSiP2 ( X= S, Se, Te) monolayers: a first-principles study
Thi Hiep Nguyen, Cuong Q. Nguyen, N. A. Poklonski, et al.
Journal of Physics D Applied Physics (2023) Vol. 56, Iss. 38, pp. 385306-385306
Open Access | Times Cited: 8
Janus TiSi Z 3H ( Z = N, P, As) monolayers with large out-of-plane piezoelectricity and high electron mobility: first-principles study
Tuan V. Vu, Kieu My Bui, Khanh V. Hoang, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 34, pp. 345304-345304
Closed Access | Times Cited: 2
Piezoelectric GaGeX2 (X = N, P, and As) semiconductors with Raman activity and high carrier mobility for multifunctional applications: a first-principles simulation
Tuan V. Vu, Thi Hiep Nguyen, Vo Thi Hoa, et al.
RSC Advances (2024) Vol. 14, Iss. 44, pp. 32053-32062
Open Access | Times Cited: 2
Coexistence of Large In-Plane and Out-of-Plane Piezoelectric Response in Group III–VI XMAY2 (X = I; M = Ti, Zr; A = Al, Ga; Y = S, Se) Monolayers
Zujun Li, Yushan Zhou, Xiuping Guo, et al.
Crystals (2024) Vol. 14, Iss. 8, pp. 708-708
Open Access | Times Cited: 1
Raman response, piezoelectricity, and transport properties of the two-dimensional Janus HfSiX3H (X=N/P/As<…
Tuan V. Vu, Thi Hiep Nguyen, Huynh V. Phuc, et al.
Physical review. B./Physical review. B (2024) Vol. 110, Iss. 23
Closed Access | Times Cited: 1
Large‐Gap Quantum Spin Hall State in Double‐Transition‐Metal Homologous Compounds of WSi2N4: A First‐Principles Study
Yanli Wang, Yi Ding
physica status solidi (RRL) - Rapid Research Letters (2023) Vol. 18, Iss. 3
Closed Access | Times Cited: 2
Janus piezoelectric ZrSiZ3H (Z= N, P, As) semiconductors with Raman response and high carrier mobility by a first-…
Tuan V. Vu, Thi Hiep Nguyen, Huynh V. Phuc, et al.
Surfaces and Interfaces (2024) Vol. 52, pp. 104975-104975
Closed Access
Novel Janus α-Au4XY (X/Y = S, Se, Te) monolayers with ultra-high carrier mobility: A first-principles study
Nguyễn Xuân Vinh, Le C. Nhan, Đặng Xuân Dự, et al.
Materials Science in Semiconductor Processing (2024) Vol. 186, pp. 109045-109045
Closed Access
High stability Janus structures of two dimensional Fe3GeTe2 monolayer by first-principles investigations
Thi Hiep Nguyen, Dinh Thanh Khan, Lê Thị Phương Thảo, et al.
Materials Science in Semiconductor Processing (2024) Vol. 186, pp. 109055-109055
Closed Access
Raman activity, piezoelectric response, and carrier mobility in two-dimensional Janus TiGeZ3H (Z= N, P, As) …
A. I. Kartamyshev, Nguyen N. Hieu, N. A. Poklonski, et al.
Materials Science in Semiconductor Processing (2024) Vol. 187, pp. 109102-109102
Closed Access
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