OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Controllable Resistive Switching in ReS2/WS2 Heterostructure for Nonvolatile Memory and Synaptic Simulation
Feihong Huang, Congming Ke, Jinan Li, et al.
Advanced Science (2023) Vol. 10, Iss. 28
Open Access | Times Cited: 28

Showing 1-25 of 28 citing articles:

Recent developments in the state-of-the-art optoelectronic synaptic devices based on 2D materials: a review
Rajesh Jana, Sagnik Ghosh, Ritamay Bhunia, et al.
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 15, pp. 5299-5338
Closed Access | Times Cited: 10

Advances in two-dimensional heterojunction for sophisticated memristors
Shiwei Qin, Ye Tao, Ting Hu, et al.
Materials Today Physics (2024) Vol. 41, pp. 101336-101336
Closed Access | Times Cited: 9

Harnessing in-plane optical anisotropy in WS2 through ReS2 crystal
Soyeong Kwon, Tae Keun Yun, J. Peiwen, et al.
Nanophotonics (2025)
Open Access | Times Cited: 1

Dual‐adaptive Heterojunction Synaptic Transistors for Efficient Machine Vision in Harsh Lighting Conditions
Yiru Wang, Shimiao Nie, Shanshuo Liu, et al.
Advanced Materials (2024) Vol. 36, Iss. 32
Closed Access | Times Cited: 7

Highly Reliable Van Der Waals Memory Boosted by a Single 2D Charge Trap Medium
Chao Liu, Jie Pan, Qihui Yuan, et al.
Advanced Materials (2023) Vol. 36, Iss. 3
Closed Access | Times Cited: 16

Brain-Inspired Computing: Can 2D Materials Bridge the Gap Between Biological and Artificial Neural Networks?
Deependra Kumar Singh, Govind Gupta
Materials Advances (2024) Vol. 5, Iss. 8, pp. 3158-3172
Open Access | Times Cited: 5

Two-dimensional material-based memristive devices for alternative computing
Jey Panisilvam, Ha Young Lee, Sujeong Byun, et al.
Nano Convergence (2024) Vol. 11, Iss. 1
Open Access | Times Cited: 5

Versatile Cu2ZnSnS4-based synaptic memristor for multi-field-regulated neuromorphic applications
Xiaofei Dong, Hao Sun, Siyuan Li, et al.
The Journal of Chemical Physics (2024) Vol. 160, Iss. 15
Closed Access | Times Cited: 4

Simultaneous achieving negative photoconductivity response and volatile resistive switching in Cs2CoCl4 single crystals towards artificial optoelectronic synapse
Huifang Jiang, Huifang Ji, Zhuangzhuang Ma, et al.
Light Science & Applications (2024) Vol. 13, Iss. 1
Open Access | Times Cited: 4

Reconfigurable, Nonvolatile, Optoelectronic Synaptic Memtransistor Based on MoS2/Te van der Waals Heterostructures
Yuan Li, Min Zhao, Xikui Ma, et al.
Advanced Functional Materials (2025)
Closed Access

An Au25 nanocluster/MoS2 vdWaals heterojunction phototransistor for chromamorphic visual-afterimage emulation
Zhuohui Huang, Chuan‐Jia Tong, Yanbo Zhao, et al.
Nanoscale (2024) Vol. 16, Iss. 36, pp. 17064-17078
Closed Access | Times Cited: 3

Ni3C nanosheets and PVA nanocomposite based memristor for low-cost and flexible non-volatile memory devices
Geethasree Koncha, Nishat Kumar Das, Sushmee Badhulika
Materials Science in Semiconductor Processing (2024) Vol. 184, pp. 108804-108804
Closed Access | Times Cited: 3

Anomalous Raman Polarization Behaviors of ReS2 Thin Layers on Au Thin Film
Yu Luo, Jundong Zhang, Weitao Su, et al.
Journal of Raman Spectroscopy (2025)
Closed Access

Radio frequency switching devices based on two-dimensional materials for high-speed communication applications
Fei Xing, Fangzhu Qing, Mo Zhou, et al.
Nanoscale Horizons (2025)
Closed Access

Physical mechanisms and integration design of memristors
Mengna Wang, Kun Wang, Bai Sun, et al.
Materials Today Nano (2025), pp. 100628-100628
Closed Access

Emulation of Optoelectronic Synaptic Behavior in a MoS2/WSe2-Based p–n van der Waals Heterostructure Memtransistor
X.-L. Wang, Fengxiang Chen, Xiaoli Li, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 6, pp. 4311-4320
Closed Access | Times Cited: 3

A Balanced CMOS Compatible Ternary Memristor-NMOS Logic Family and Its Application
Xiaoyuan Wang, Xinhui Chen, Jiawei Zhou, et al.
IEEE Transactions on Circuits and Systems I Regular Papers (2024) Vol. 71, Iss. 10, pp. 4560-4573
Closed Access | Times Cited: 3

Observation of Strong Anisotropic Interlayer Excitons
Yu Luo, Weitao Su, Fei Chen, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 47, pp. 54808-54817
Closed Access | Times Cited: 5

Stable positive unipolar resistive switching in chemical solution-deposited nanocrystalline spinel ferrite ZnFe2O4
Shafqat un Nisa, Anwar Manzoor Rana
Modern Physics Letters B (2024)
Closed Access | Times Cited: 1

Effect of Doping and Defects on the Electronic Properties of MoS2/WSe2 Bilayer Heterostructure: A First-principles Study
Xingliang Wang, Guijuan Zhao, Xiurui Lv, et al.
Physical Chemistry Chemical Physics (2024) Vol. 26, Iss. 26, pp. 18402-18407
Closed Access | Times Cited: 1

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