Open Access Helper

OpenAlex Citation Counts

OpenAlex Citations Logo

OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts
Tien Dat Ngo, Zheng Yang, Myeong‐jin Lee, et al.
Advanced Electronic Materials (2021) Vol. 7, Iss. 5
Closed Access | Times Cited: 43

Showing 1-25 of 43 citing articles:

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects
Xiaochi Liu, Min Sup Choi, E. H. Hwang, et al.
Advanced Materials (2021) Vol. 34, Iss. 15
Open Access | Times Cited: 202
Fermi‐Level Pinning‐Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits
Jisu Jang, Hyun‐Soo Ra, Jongtae Ahn, et al.
Advanced Materials (2022) Vol. 34, Iss. 19
Closed Access | Times Cited: 87
Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale
Yang Xiang-Dong, Jia Li, Rong Song, et al.
Nature Nanotechnology (2023) Vol. 18, Iss. 5, pp. 471-478
Closed Access | Times Cited: 87
The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms
Yang Shen, Zuoyuan Dong, Yabin Sun, et al.
Advanced Materials (2022) Vol. 34, Iss. 48
Closed Access | Times Cited: 83
Transistor engineering based on 2D materials in the post-silicon era
Senfeng Zeng, Chunsen Liu, Peng Zhou
Nature Reviews Electrical Engineering (2024) Vol. 1, Iss. 5, pp. 335-348
Closed Access | Times Cited: 32
Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration
Junchuan Tang, Jianfeng Jiang, Xiaoyin Gao, et al.
Nature Materials (2025)
Closed Access | Times Cited: 2
Bamboo-charcoal-loaded graphitic carbon nitride for photocatalytic hydrogen evolution
Yongfeng Lu, Wensong Wang, Hongrui Cheng, et al.
International Journal of Hydrogen Energy (2021) Vol. 47, Iss. 6, pp. 3733-3740
Open Access | Times Cited: 45
Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials
Theresia Knobloch, S. Selberherr, Tibor Grasser
Nanomaterials (2022) Vol. 12, Iss. 20, pp. 3548-3548
Open Access | Times Cited: 28
基于极性可重构WSe2肖特基异质结的非对称逻辑整 流器和光电探测器
Jianming Huang, Kaixiang Shu, Nabuqi Bu, et al.
Science China Materials (2023) Vol. 66, Iss. 12, pp. 4711-4722
Open Access | Times Cited: 14
Boltzmann Switching MoS2 Metal–Semiconductor Field‐Effect Transistors Enabled by Monolithic‐Oxide‐Gapped Metal Gates at the Schottky–Mott Limit
Yeon Ho Kim, Wei Jiang, Donghun Lee, et al.
Advanced Materials (2024) Vol. 36, Iss. 29
Closed Access | Times Cited: 5
Self‐Forming p–n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts
Hai Yen Le Thi, Tien Dat Ngo, Nhat Anh Nguyen Phan, et al.
Small (2022) Vol. 18, Iss. 46
Closed Access | Times Cited: 21
Modulation of Contact Resistance of Dual‐Gated MoS2 FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts
Tien Dat Ngo, Tuyen Huynh, Hanggyo Jung, et al.
Advanced Science (2023) Vol. 10, Iss. 21
Open Access | Times Cited: 12
Drain-Induced Multifunctional Ambipolar Electronics Based on Junctionless MoS2
Jungi Song, Suyeon Lee, Yongwook Seok, et al.
ACS Nano (2024) Vol. 18, Iss. 5, pp. 4320-4328
Closed Access | Times Cited: 4
Reversible Polarity Control in 2D MoTe2 Field‐Effect Transistors for Complementary Logic Gate Applications
Byoung‐Soo Yu, Wonsik Kim, Jisu Jang, et al.
Advanced Functional Materials (2024)
Closed Access | Times Cited: 4
Transistors and logic circuits enabled by 2D transition metal dichalcogenides: a state-of-the-art survey
Fangsheng Qian, Xiaobo Bu, Junjie Wang, et al.
Journal of Materials Chemistry C (2022) Vol. 10, Iss. 45, pp. 17002-17026
Closed Access | Times Cited: 17
Low-Power Transistors with Ideal p-type Ohmic Contacts Based on VS2/WSe2 van der Waals Heterostructures
Zeng-Lin Cao, Lin Zhu, K.L. Yao
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 15, pp. 19158-19166
Closed Access | Times Cited: 3
Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides through Substitutional Vanadium Doping
Lili Zhang, Zhe Wang, Junwei Zhang, et al.
Advanced Functional Materials (2022) Vol. 32, Iss. 46
Closed Access | Times Cited: 14
Homogeneous Palladium Diselenide pn‐Junction Diodes for Reconfigurable Circuit Applications
Minjong Lee, Chang Yong Park, Sangjun Sim, et al.
Advanced Electronic Materials (2022) Vol. 8, Iss. 10
Closed Access | Times Cited: 13
Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning
Tien Dat Ngo, Min Sup Choi, Myeong‐jin Lee, et al.
Journal of Materials Chemistry C (2021) Vol. 10, Iss. 3, pp. 846-853
Closed Access | Times Cited: 16
Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky–Mott Limit
Euyjin Park, Seung-Hwan Kim, Seong-Ji Min, et al.
ACS Nano (2024) Vol. 18, Iss. 43, pp. 29771-29778
Closed Access | Times Cited: 2
Fundamental and Photodetector Application of Van Der Waals Schottky Junctions
Jing‐Yuan Wu, Haiyang Jiang, Zhaoyang Wen, et al.
Advanced Devices & Instrumentation (2023) Vol. 4
Open Access | Times Cited: 6
Analytical measurements of contact resistivity in two-dimensional WSe2 field-effect transistors
Inyong Moon, Min Sup Choi, Sungwon Lee, et al.
2D Materials (2021) Vol. 8, Iss. 4, pp. 045019-045019
Open Access | Times Cited: 14
Forming Stable van der Waals Contacts between Metals and 2D Semiconductors
Gihyeon Kwon, Hyeon‐Sik Kim, Kwangsik Jeong, et al.
Small Methods (2023) Vol. 7, Iss. 9
Closed Access | Times Cited: 5
Demonstration and analysis of ambipolar SnO inverter with high gain
Kishwar Mashooq, Jaesung Jo, Rebecca L. Peterson
Applied Physics Letters (2023) Vol. 122, Iss. 1
Closed Access | Times Cited: 4
Side‐Gate BN‐MoS2 Transistor for Reconfigurable Multifunctional Electronics
Daobing Zeng, Rongxiang Ding, Guanyu Liu, et al.
Advanced Electronic Materials (2023)
Open Access | Times Cited: 4
Page 1 - Next Page

Scroll to top