Open Access Helper

OpenAlex Citation Counts

OpenAlex Citations Logo

OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15N
Niklas Wolff, Georg Schönweger, Isabel Streicher, et al.
Advanced Physics Research (2024) Vol. 3, Iss. 5
Open Access | Times Cited: 18

Showing 18 citing articles:

Proximity ferroelectricity in wurtzite heterostructures
Chloe Skidmore, R. Jackson Spurling, John Hayden, et al.
Nature (2025)
Closed Access | Times Cited: 2
Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities
Danhao Wang, Samuel Yang, Jiangnan Liu, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 15
Open Access | Times Cited: 14
Rethinking polarization in wurtzite semiconductors
Ding Wang, Danhao Wang, Samuel Yang, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 26
Closed Access | Times Cited: 9
Electric field-induced domain structures in ferroelectric AlScN thin films
Niklas Wolff, Tim Grieb, Georg Schönweger, et al.
Journal of Applied Physics (2025) Vol. 137, Iss. 8
Open Access | Times Cited: 1
Understanding Interfaces in AlScN/GaN Heterostructures
Isabel Streicher, Stefano Leone, Meiling Zhang, et al.
Advanced Functional Materials (2024)
Open Access | Times Cited: 8
Clarification of the spontaneous polarization direction in crystals with wurtzite structure
Simon Fichtner, M. Yassine, Chris G. Van de Walle, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 4
Closed Access | Times Cited: 5
Experimental determination of giant polarization in wurtzite III-nitride semiconductors
Haotian Ye, Ping Wang, Rui Wang, et al.
Nature Communications (2025) Vol. 16, Iss. 1
Open Access
Low leakage current in heteroepitaxial Al0.7Sc0.3N ferroelectric films on Open Access
Aluminum-Nitride-Based Semiconductors: Growth Processes, Ferroelectric Properties, and Performance Enhancements
Luyi Wang, Jing Cheng, Ke Qu, et al.
Inorganics (2025) Vol. 13, Iss. 2, pp. 29-29
Open Access
Epitaxial growth of transition metal nitrides by reactive sputtering
Florian Hörich, C. Lüttich, Jona Grümbel, et al.
Frontiers in Materials (2025) Vol. 12
Open Access
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Stacy Ota, Takahiko Kawahara, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 5
Closed Access
Polarization and domains in wurtzite ferroelectrics: Fundamentals and applications
Simon Fichtner, Georg Schönweger, Cheng‐Wei Lee, et al.
Applied Physics Reviews (2025) Vol. 12, Iss. 2
Open Access
ScAlInN/GaN heterostructures grown by molecular beam epitaxy
Haotian Ye, Rui Wang, Liuyun Yang, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 12
Closed Access | Times Cited: 3
Interface structures of Al0.85Sc0.15N-on-Si thin films grown by reactive magnetron sputtering upon post-growth cyclic rapid thermal annealing
Xiaohu Huang, Anna Marie Yong, Ming Lin, et al.
Journal of Applied Physics (2024) Vol. 135, Iss. 9
Closed Access | Times Cited: 2
Composition‐Graded Nitride Ferroelectrics Based Multi‐Level Non‐Volatile Memory for Neuromorphic Computing
Rui Wang, Haotian Ye, Xifan Xu, et al.
Advanced Materials (2024)
Closed Access | Times Cited: 2
Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition
Isabel Streicher, Patrik Straňák, Lutz Kirste, et al.
APL Materials (2024) Vol. 12, Iss. 5
Open Access | Times Cited: 1
Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films
Feng Yang
Advanced Electronic Materials (2024)
Open Access | Times Cited: 1
Effect of Abnormally Oriented Grains on the Ferroelectric Properties of Al0.65Sc0.35N Thin Films
Juan Xi, Dayu Zhou, Yi Tong, et al.
Materials Today Communications (2024), pp. 110834-110834
Closed Access
Page 1

Scroll to top