Open Access Helper

OpenAlex Citation Counts

OpenAlex Citations Logo

OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications
Min Hoe Cho, Cheol Hee Choi, Jae Kyeong Jeong
Journal of the Society for Information Display (2022) Vol. 30, Iss. 3, pp. 175-197
Closed Access | Times Cited: 23

Showing 23 citing articles:

Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips
Taikyu Kim, Cheol Hee Choi, Jae Seok Hur, et al.
Advanced Materials (2022) Vol. 35, Iss. 43
Closed Access | Times Cited: 125
Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach
Min Hoe Cho, Cheol Hee Choi, Jae Kyeong Jeong
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 16, pp. 18646-18661
Closed Access | Times Cited: 42
Indium-free Zn-Sn-Al-O based thin-film transistors fabricated by plasma-enhanced atomic layer deposition
Shice Wei, Xiaojun Yu, Bojia Chen, et al.
Materials Science in Semiconductor Processing (2025) Vol. 190, pp. 109369-109369
Closed Access | Times Cited: 1
High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition
Min Hoe Cho, Cheol Hee Choi, Min Jae Kim, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 15, pp. 19137-19151
Closed Access | Times Cited: 23
Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications
Agata Piacentini, Alwin Daus, Zhenxing Wang, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 8
Open Access | Times Cited: 21
A stretchable tactile sensor based on ALD-prepared conductive composite textile
Meng-Yang Liu, Yifei Zhang, Lang‐Xi Ou, et al.
Applied Materials Today (2024) Vol. 37, pp. 102099-102099
Closed Access | Times Cited: 6
Achievement of Green and Sustainable CVD Through Process, Equipment and Systematic Optimization in Semiconductor Fabrication
Song Yi Baek, Jingyu Park, Taeyoung Koh, et al.
International Journal of Precision Engineering and Manufacturing-Green Technology (2024) Vol. 11, Iss. 4, pp. 1295-1316
Closed Access | Times Cited: 6
Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors
Jeonga Lee, Cheol Hee Choi, Taikyu Kim, et al.
ACS Applied Materials & Interfaces (2022) Vol. 14, Iss. 51, pp. 57016-57027
Closed Access | Times Cited: 20
Graded-Band-Gap Zinc–Tin Oxide Thin-Film Transistors with a Vertically Stacked Structure for Wavelength-Selective Photodetection
Jiahui Teng, Yantao Chen, Chun-Ming Huang, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 7, pp. 9060-9067
Closed Access | Times Cited: 4
ZnO-In2O3-SnO2 THIN FILM TRANSPARENT HEATERS: TUNABLE ELECTROTHERMAL PROPERTIES THROUGH SUBSTRATE TEMPERATURE AND POSTGROWTH ANNEALING
Hasan Akyıldız, Hilal Aybike Can, Burak Kıvrak, et al.
Konya Journal of Engineering Sciences (2025) Vol. 13, Iss. 1, pp. 25-43
Open Access
Atomic layer deposited zinc promoted copper catalysts for carbon dioxide hydrogenation to methanol: influence of support
Aitor Arandia, Jorge Velasco, Ahmed Sajid, et al.
Catalysis Today (2025), pp. 115283-115283
Open Access
Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source
Jaewook Yoo, Hyeun Seung Jo, Seung‐Bae Jeon, et al.
Advanced Electronic Materials (2024) Vol. 10, Iss. 8
Closed Access | Times Cited: 3
Achieving High Field-Effect Mobility Exceeding 90 cm2/Vs in a-IGZTO Transistors With Excellent Reliability
Bang Ju Park, Sang Won Chung, Min Jae Kim, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 11, pp. 1857-1860
Closed Access | Times Cited: 8
Exchange Reactions during Atomic Layer Deposition of Ternary Group 13 Oxides and Nitrides
Iaan Cho, Bonggeun Shong
ACS Applied Electronic Materials (2024)
Closed Access | Times Cited: 2
Non-Volatile Memory Based on ZnO Thin-Film Transistor with Self-Assembled Au Nanocrystals
Hui Xie, Hao Wu, Chang Liu
Nanomaterials (2024) Vol. 14, Iss. 8, pp. 678-678
Open Access | Times Cited: 1
97‐3: Late‐News Paper: Enhanced IGZO TFT Performance with Atomic Layer Deposition Parameter Optimization for Large OLED Displays
Heung Jo Lee, Pil Sang Yun, Jong Uk Bae, et al.
SID Symposium Digest of Technical Papers (2024) Vol. 55, Iss. 1, pp. 1250-1253
Closed Access | Times Cited: 1
Rational Molecular Design for Non-aqueous Atomic Layer Deposition of Zinc Oxide
Miso Kim, Euncheol Shin, Hye-Won Song, et al.
Chemistry of Materials (2023) Vol. 35, Iss. 12, pp. 4669-4679
Closed Access | Times Cited: 3
Threshold voltage tuning of IGZTO thin-film transistors deposited by RF sputtering for high-resolution flexible displays using deep ultraviolet light
In Pyo Park, Bu Kyeong Hwang, Bo Ram Lee, et al.
Journal of Materials Chemistry C (2023) Vol. 11, Iss. 23, pp. 7793-7801
Closed Access | Times Cited: 2
Passivated indium oxide thin-film transistors with high field-effect mobility (128.3 cm2 V−1 s−1) and low thermal budget (200 °C)
Na Xiao, Vishal Khandelwal, Saravanan Yuvaraja, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 44, pp. 445104-445104
Open Access
Monolithic three-dimensional integration with 2D material-based p-type transistors
Taoyu Zou, Youjin Reo, Seongmin Heo, et al.
Materials Science and Engineering R Reports (2024) Vol. 163, pp. 100893-100893
Closed Access
Linear and nonlinear optical properties of Al2O3/Y2O3 nanolaminates fabricated by atomic layer deposition
B. Can-Uc, R. Rangel-Rojo, E. Medina, et al.
Optics & Laser Technology (2022) Vol. 160, pp. 109063-109063
Closed Access | Times Cited: 1
30.1: Invited Paper: (Invited) Recent Progress in Metal Oxide TFTs using Atomic Layer Deposition
Jae Seok Hur, Jae Kyeong Jeong
SID Symposium Digest of Technical Papers (2023) Vol. 54, Iss. S1, pp. 196-199
Closed Access
Surface Chemical Reactions During Atomic Layer Deposition of Zinc Oxynitride (ZnON)
Tran Thi Ngoc Van, Bonggeun Shong
Electronic Materials Letters (2023) Vol. 20, Iss. 4, pp. 500-507
Closed Access
Page 1

Scroll to top