OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Sol–gel polishing technology for extremely hard semiconductor substrates
Qiufa Luo, Hailang Wen, Jing Lu
The International Journal of Advanced Manufacturing Technology (2022) Vol. 120, Iss. 3-4, pp. 1415-1432
Closed Access | Times Cited: 13

Showing 13 citing articles:

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
Wantang Wang, Xuesong Lu, Xinke Wu, et al.
Advanced Materials Interfaces (2023) Vol. 10, Iss. 13
Open Access | Times Cited: 51

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies
Chi-Hsiang Hsieh, Che-Yuan Chang, Yi-Kai Hsiao, et al.
Micromachines (2022) Vol. 13, Iss. 10, pp. 1752-1752
Open Access | Times Cited: 38

Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate
Xuanyi Zhao, Shouzhi Wang, Lei Liu, et al.
Advanced Materials Interfaces (2024)
Open Access | Times Cited: 6

Polishing performance and material removal mechanism in the solid-phase Fenton reaction based polishing process of SiC wafer using diamond gel disc
Lanxing Xu, Kaiping Feng, Liang Zhao, et al.
Journal of Materials Processing Technology (2024) Vol. 330, pp. 118486-118486
Closed Access | Times Cited: 6

Compound mechanical and chemical-mechanical polishing processing technique for single-crystal silicon carbide
Xinxing Ban, Zhuangzhi Tian, Jianhui Zhu, et al.
Precision Engineering (2023) Vol. 86, pp. 160-169
Closed Access | Times Cited: 11

Study on material removal mechanism of solid phase Fenton catalytic polishing of SiC wafer with gel-forming abrasive disc
Kaiping Feng, Lanxing Xu, Yanzhang Gu, et al.
Materials Science in Semiconductor Processing (2025) Vol. 194, pp. 109488-109488
Closed Access

The polishing surface quality of single crystal diamond with GO green-enhanced diamond hybrid slurry and material removal mechanism analysis
Zixuan Wang, Xueyan Hou, Ji Zhao, et al.
Wear (2025) Vol. 574-575, pp. 206083-206083
Closed Access

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing
Qiufa Luo, Jing Lu, Feng Jiang, et al.
Nanoscale (2023) Vol. 15, Iss. 38, pp. 15675-15685
Closed Access | Times Cited: 9

Machining performance and material removal mechanism of sapphire with novel polishing slurry
Yongchao Xu, Cheng Peng, Youji Zhan, et al.
Applied Surface Science (2024) Vol. 671, pp. 160756-160756
Closed Access | Times Cited: 2

Process optimization of 4H-SiC chemical mechanical polishing based on grey relational analysis
Xinxing Ban, Tianxu Duan, Zhuangzhi Tian, et al.
Semiconductor Science and Technology (2023) Vol. 38, Iss. 7, pp. 075014-075014
Closed Access | Times Cited: 4

Experimental study on single crystal diamond CMP based on Fenton reaction and analysis of oxidation mechanism
Ziyuan Luo, Jiabin Lu, Jun‐Jie Zeng, et al.
Materials Science in Semiconductor Processing (2024) Vol. 182, pp. 108739-108739
Closed Access | Times Cited: 1

Microscopic removal mechanism of 4 H-SiC during abrasive scratching in aqueous H2O2 and H2O: Insights from ReaxFF molecular dynamics
Xinxing Ban, Shaodong Zheng, Zhuangzhi Tian, et al.
Tribology International (2024) Vol. 200, pp. 110109-110109
Closed Access | Times Cited: 1

Effect of Parameters of Chemical Mechanical Polishing (CMP) for Improving Surface Roughness for Semiconductor Material Kind Silicon
Shakir M. Mousa, Shukry H. Aghdeab
Instrumentation Mesure Métrologie (2023) Vol. 22, Iss. 3, pp. 121-125
Open Access

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