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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Dominant factors and their action mechanisms on material removal rate in electrochemical mechanical polishing of 4H-SiC (0001) surface
Xiaozhe Yang, Xu Yang, Kentaro Kawai, et al.
Applied Surface Science (2021) Vol. 562, pp. 150130-150130
Open Access | Times Cited: 30

Showing 1-25 of 30 citing articles:

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
Wantang Wang, Xuesong Lu, Xinke Wu, et al.
Advanced Materials Interfaces (2023) Vol. 10, Iss. 13
Open Access | Times Cited: 51
Environment-friendly electrochemical mechanical polishing using solid polymer electrolyte/CeO2 composite pad for highly efficient finishing of 4H-SiC (0001) surface
Junji Murata, Kenshin Hayama, Masaru Takizawa
Applied Surface Science (2023) Vol. 625, pp. 157190-157190
Open Access | Times Cited: 34
Polishing performance and mechanism of a novel Fe-based slurry for chemical mechanical polishing
Shi-Dong Chen, Hong Lei
Tribology International (2024) Vol. 194, pp. 109549-109549
Closed Access | Times Cited: 15
High-efficiency free-damage electrochemical shear-thickening polishing of single-crystal silicon carbide
Mingjie Shen, Lingwei Wu, Min Wei, et al.
Journal of Manufacturing Processes (2024) Vol. 132, pp. 532-543
Closed Access | Times Cited: 15
Sustainable Electrochemical Mechanical Polishing (ECMP) for 4H-SiC wafer using chemical-free polishing slurry with hydrocarbon-based solid polymer electrolyte
Naoki Inada, Masaru Takizawa, M. Adachi, et al.
Applied Surface Science (2024) Vol. 664, pp. 160241-160241
Open Access | Times Cited: 13
Efficient and slurryless ultrasonic vibration assisted electrochemical mechanical polishing for 4H–SiC wafers
Xiaozhe Yang, Xu Yang, Haiyang Gu, et al.
Ceramics International (2021) Vol. 48, Iss. 6, pp. 7570-7583
Open Access | Times Cited: 42
Novel SiC wafer manufacturing process employing three-step slurryless electrochemical mechanical polishing
Xu Yang, Xiaozhe Yang, Kentaro Kawai, et al.
Journal of Manufacturing Processes (2021) Vol. 70, pp. 350-360
Closed Access | Times Cited: 33
Compound mechanical and chemical-mechanical polishing processing technique for single-crystal silicon carbide
Xinxing Ban, Zhuangzhi Tian, Jianhui Zhu, et al.
Precision Engineering (2023) Vol. 86, pp. 160-169
Closed Access | Times Cited: 11
Investigation of the tribological behaviors for 4H–SiC substrate under different lubrication conditions
Yuqi Zhou, Kezhong Xu, Weishan Lv, et al.
Wear (2024) Vol. 556-557, pp. 205537-205537
Closed Access | Times Cited: 4
Dominant parameters and mechanisms influencing the electrochemical shear-thickening polishing of 4H-SiC
Mingjie Shen, Min Wei, Lingwei Wu, et al.
Ceramics International (2024)
Closed Access | Times Cited: 4
Research of Vertical via Based on Silicon, Ceramic and Glass
Wenchao Tian, Sixian Wu, Wenhua Li
Micromachines (2023) Vol. 14, Iss. 7, pp. 1391-1391
Open Access | Times Cited: 10
Electric-field-modulated oxidation and its effect on photoelectrochemical mechanical polishing of 4H-SiC
Yang Zhao, Shang Gao, Yuewen Sun, et al.
International Journal of Mechanical Sciences (2025), pp. 110247-110247
Closed Access
Electrochemical shear-thickening polishing of 4H-SiC (000-1): Factors influencing the anodization process
Wei Hang, Mingjie Shen, Min Wei, et al.
Ceramics International (2025)
Closed Access
High-quality machining of thin copper plate based on error proofing method
Di Wu
Journal of Manufacturing Processes (2025) Vol. 145, pp. 172-189
Closed Access
Electrochemical Mechanical Polishing
Xu Yang, Xiaozhe Yang, Kazuya Yamamura
Springer tracts in mechanical engineering (2025), pp. 381-404
Closed Access
Effect of Voltage on Electrochemical Mechanical Polishing (ECMP) of 4H-SiC with Fixed Abrasives
Pengfei Wu, Dongdong Zhao, Ning Liu, et al.
Journal of Materials Research and Technology (2025) Vol. 36, pp. 7807-7817
Open Access
High-efficiency wafer-scale finishing of 4H-SiC (0001) surface using chemical-free electrochemical mechanical method with a solid polymer electrolyte
Che Nor Syahirah Binti Che Zulkifle, Kenshin Hayama, Junji Murata
Diamond and Related Materials (2021) Vol. 120, pp. 108700-108700
Closed Access | Times Cited: 21
Charge Utilization Efficiency and Side Reactions in the Electrochemical Mechanical Polishing of 4H-SiC (0001)
Xiaozhe Yang, Xu Yang, Haiyang Gu, et al.
Journal of The Electrochemical Society (2022) Vol. 169, Iss. 2, pp. 023501-023501
Closed Access | Times Cited: 15
Atomic scale investigation of notch evolution on 4H-SiC under different cutting surfaces and environments
Yuqi Zhou, Yuhua Huang, Jinming Li, et al.
Journal of Manufacturing Processes (2023) Vol. 105, pp. 99-111
Closed Access | Times Cited: 9
Improvement in the polishing characteristics of titanium-based materials using electrochemical mechanical polishing
Atsuki Tsuji, Pengfei Jia, Masaru Takizawa, et al.
Surfaces and Interfaces (2022) Vol. 35, pp. 102490-102490
Closed Access | Times Cited: 14
Sol–gel polishing technology for extremely hard semiconductor substrates
Qiufa Luo, Hailang Wen, Jing Lu
The International Journal of Advanced Manufacturing Technology (2022) Vol. 120, Iss. 3-4, pp. 1415-1432
Closed Access | Times Cited: 13
Electrochemical etching modes of 4H-SiC in KOH solutions
Shangyu Yang, Siqi Zhao, Junhong Chen, et al.
Semiconductor Science and Technology (2023) Vol. 38, Iss. 5, pp. 055019-055019
Closed Access | Times Cited: 7
Nano-Precision Processing of NiP Coating by Magnetorheological Finishing
Chao Xu, Xiaoqiang Peng, Hao Hu, et al.
Nanomaterials (2023) Vol. 13, Iss. 14, pp. 2118-2118
Open Access | Times Cited: 5
Electrochemical surface modification of GH4742 nickel-based superalloy in C6H5Na3O7 solution
Fenghe Wu, He Tong, Feng Chen, et al.
Surfaces and Interfaces (2024) Vol. 45, pp. 103815-103815
Closed Access | Times Cited: 1
Effect of cerium impurity on the stable growth of the 4H-SiC polytype by the physical vapour transport method
K. Racka-Szmidt, E. Tymicki, Marcin Raczkiewicz, et al.
Journal of Crystal Growth (2022) Vol. 586, pp. 126616-126616
Closed Access | Times Cited: 3
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