
OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Van der Waals stacking of multilayer In2Se3 with 2D metals induces transition from Schottky to Ohmic contact
Xianghong Niu, Chengfeng Pan, Anqi Shi, et al.
Applied Surface Science (2023) Vol. 617, pp. 156557-156557
Closed Access | Times Cited: 11
Xianghong Niu, Chengfeng Pan, Anqi Shi, et al.
Applied Surface Science (2023) Vol. 617, pp. 156557-156557
Closed Access | Times Cited: 11
Showing 11 citing articles:
Tunable Schottky Barrier and Efficient Ohmic Contacts in MSi2N4 (M = Mo, W)/2D Metal Contacts
Wen Ai, Yongfei Shi, Xiaohui Hu, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 10, pp. 5606-5613
Closed Access | Times Cited: 14
Wen Ai, Yongfei Shi, Xiaohui Hu, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 10, pp. 5606-5613
Closed Access | Times Cited: 14
Graphene/M2OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact
Xiang Liu, Jingying Yang, Xiaohui Deng, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 4, pp. 2568-2574
Closed Access | Times Cited: 5
Xiang Liu, Jingying Yang, Xiaohui Deng, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 4, pp. 2568-2574
Closed Access | Times Cited: 5
Enhanced tunnel electroresistance in BAs/In2S3 ferroelectric tunnel junction through ferroelectric control of band alignments
Ruixue Li, Sicong Zhu, Jun Ding
Computational Materials Science (2025) Vol. 253, pp. 113823-113823
Closed Access
Ruixue Li, Sicong Zhu, Jun Ding
Computational Materials Science (2025) Vol. 253, pp. 113823-113823
Closed Access
Rational Design and Characterization of 2D Metal‐Semiconductor Junctions for Optoelectronics by Combining Quantum Transport and Excited State Carrier Dynamics Simulations: Case of 2H‐WTe2 Based Junctions
Chengfeng Pan, Dazhong Sun, Wang Gong, et al.
Small Methods (2025)
Closed Access
Chengfeng Pan, Dazhong Sun, Wang Gong, et al.
Small Methods (2025)
Closed Access
Defected BN Substrate Induces the Transition from Schottky to Ohmic Contact in Two-Dimensional Metals–Semiconductor Junctions
Chengfeng Pan, Anqi Shi, Wang Gong, et al.
ACS Materials Letters (2024) Vol. 6, Iss. 6, pp. 2118-2125
Closed Access | Times Cited: 2
Chengfeng Pan, Anqi Shi, Wang Gong, et al.
ACS Materials Letters (2024) Vol. 6, Iss. 6, pp. 2118-2125
Closed Access | Times Cited: 2
Structural evolution of in-plane hybrid graphene/hexagonal boron nitride heterostructure upon heating
Hang Thi Nguyen
Journal of Molecular Graphics and Modelling (2023) Vol. 125, pp. 108579-108579
Closed Access | Times Cited: 5
Hang Thi Nguyen
Journal of Molecular Graphics and Modelling (2023) Vol. 125, pp. 108579-108579
Closed Access | Times Cited: 5
Enhancing the Contact Performance of Two-Dimensional Metals/In2S3 Junctions by the Self-Repair of Sulfur Vacancies in Air
Chengfeng Pan, Wentao Li, Anqi Shi, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 8, pp. 4485-4493
Closed Access | Times Cited: 4
Chengfeng Pan, Wentao Li, Anqi Shi, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 8, pp. 4485-4493
Closed Access | Times Cited: 4
Designing high-efficiency electrode contacts to two-dimensional semiconductor Cu2Se
Jianqun Geng, Lei Gao, Baijin Li, et al.
Applied Surface Science (2023) Vol. 639, pp. 158304-158304
Closed Access | Times Cited: 4
Jianqun Geng, Lei Gao, Baijin Li, et al.
Applied Surface Science (2023) Vol. 639, pp. 158304-158304
Closed Access | Times Cited: 4
Preparation and Application of Novel Power Semiconductor Chips
Zhiwei Yang, Asim Abas
Journal of Engineering (2024) Vol. 2024, Iss. 1
Open Access | Times Cited: 1
Zhiwei Yang, Asim Abas
Journal of Engineering (2024) Vol. 2024, Iss. 1
Open Access | Times Cited: 1
High Tunneling Electroresistance in Ferroelectric Tunnel Junctions Based on 2-D Bilayer Ferroelectric CuInP$_\text{2}$Se$_\text{6}$/Ga$_\text{2}$OTEXPRESERVE3 van der Waals Heterostructure
Leitao Lei, Xiaohong Zheng, Yan-Hong Zhou, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 8, pp. 5089-5095
Closed Access
Leitao Lei, Xiaohong Zheng, Yan-Hong Zhou, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 8, pp. 5089-5095
Closed Access
Structural Evolution of In-Plane Hybrid Graphene/Hexagonal Boron Nitride Heterostructure Upon Heating
Hang Thi Nguyen
(2023)
Closed Access
Hang Thi Nguyen
(2023)
Closed Access