OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Short-term memory characteristics in n-type-ZnO/p-type-NiO heterojunction synaptic devices for reservoir computing
Hyojin So, Jung‐Kyu Lee, Sungjun Kim
Applied Surface Science (2023) Vol. 625, pp. 157153-157153
Closed Access | Times Cited: 29

Showing 1-25 of 29 citing articles:

Synaptic Properties and Short‐Term Memory Dynamics of TiO2/WOx Heterojunction Memristor for Reservoir Computing
Hyojin So, Jungwoo Lee, Chandreswar Mahata, et al.
Advanced Materials Technologies (2024) Vol. 9, Iss. 5
Closed Access | Times Cited: 21

Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor
Dongyeol Ju, Sungjoon Kim, Kyungchul Park, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 19, pp. 24929-24942
Closed Access | Times Cited: 15

Demonstration of cognitive learning, associative learning, and multi-bit reservoir computing using TiOx/HfOx-based volatile memristor with low current
Hyuk‐Jae Jang, Dongyeol Ju, Sungjun Kim
Journal of Alloys and Compounds (2025), pp. 178897-178897
Closed Access | Times Cited: 1

Programmable Retention Characteristics in MoS2-Based Atomristors for Neuromorphic and Reservoir Computing Systems
Yoon‐Seok Lee, Yifu Huang, Yao‐Feng Chang, et al.
ACS Nano (2024) Vol. 18, Iss. 22, pp. 14327-14338
Closed Access | Times Cited: 7

Implementation of 8-bit reservoir computing through volatile ZrOx-based memristor as a physical reservoir
Dongyeol Ju, Minsuk Koo, Sungjun Kim
Nano Energy (2024) Vol. 128, pp. 109958-109958
Closed Access | Times Cited: 7

Temporal multibit operation of dynamic memristor for reservoir computing
Dongyeol Ju, Sungjun Kim
Results in Physics (2024) Vol. 61, pp. 107796-107796
Open Access | Times Cited: 5

Electrical-Light Coordinately Modulated Synaptic Memristor Based on Ti3C2 MXene for Near-Infrared Artificial Vision Applications
Langchun Yue, Hao Sun, Yirun Zhu, et al.
The Journal of Physical Chemistry Letters (2024) Vol. 15, Iss. 34, pp. 8667-8675
Closed Access | Times Cited: 5

Effect of interfacial SiO2 layer thickness on the memory performances in the HfAlOx-based ferroelectric tunnel junction for a neuromorphic system
Yongjin Park, Jihyung Kim, Sunghun Kim, et al.
Journal of Materials Chemistry C (2023) Vol. 11, Iss. 40, pp. 13886-13896
Closed Access | Times Cited: 12

Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing
Muhammad Ismail, Sunghun Kim, Maria Rasheed, et al.
Journal of Alloys and Compounds (2024) Vol. 1003, pp. 175411-175411
Closed Access | Times Cited: 4

Volatile tin oxide memristor for neuromorphic computing
Dongyeol Ju, Sungjun Kim
iScience (2024) Vol. 27, Iss. 8, pp. 110479-110479
Open Access | Times Cited: 4

Analysis and Fully Memristor-based Reservoir Computing for Temporal Data Classification
Ankur Singh, Sanghyeon Choi, Gunuk Wang, et al.
Neural Networks (2024) Vol. 182, pp. 106925-106925
Open Access | Times Cited: 4

Optically Controlled P–CuxO-Based Artificial Synaptic Device for Neuromorphic Applications
R. S. Harisankar, Prabana Jetty, Kannan Udaya Mohanan, et al.
ACS Applied Electronic Materials (2025)
Closed Access

Coexistence of volatile and non-volatile characteristics in SiO2/CoOx memristor for in-materia reservoir computing
Inho Oh, James Jungho Pak
Journal of Alloys and Compounds (2025), pp. 179383-179383
Closed Access

Visible light-modulated photoelectric synaptic transistor based on ITO and IGZO bilayer channel
Lingxue Meng, Hongwei Hao, Lan Ma, et al.
Applied Surface Science (2025), pp. 163266-163266
Closed Access

Nonvolatile and volatile resistive switching characteristics in MoS2 thin film for RRAM application
Xiaoyi Lei, Xiaoya Zhu, Hao Wang, et al.
Journal of Alloys and Compounds (2023) Vol. 969, pp. 172443-172443
Closed Access | Times Cited: 10

Quantum Dots for Resistive Switching Memory and Artificial Synapse
Gyeongpyo Kim, Seoyoung Park, Sungjun Kim
Nanomaterials (2024) Vol. 14, Iss. 19, pp. 1575-1575
Open Access | Times Cited: 3

Self-rectifying NiOX/WOX heterojunction synaptic memristor for crossbar architectured reservoir computing system
Hyojin So, Sungjun Kim, Sungjoon Kim
Journal of Alloys and Compounds (2024) Vol. 1003, pp. 175644-175644
Closed Access | Times Cited: 2

Configurable Synaptic and Stochastic Neuronal Functions in ZnTe‐Based Memristor for an RBM Neural Network
Jungang Heo, Seong‐Min Kim, Sungjun Kim, et al.
Advanced Science (2024)
Open Access | Times Cited: 2

Volatile memory characteristics of CMOS-compatible HZO ferroelectric layer for reservoir computing
Seungjun Lee, Doohyung Kim, Sungjun Kim
Ceramics International (2024) Vol. 50, Iss. 19, pp. 36495-36502
Closed Access | Times Cited: 2

ab initio study of quantized conduction mechanism in trilayered heterostructure for scaled down memory device applications
Umbreen Rasheed, Muhammad Imran, Niaz Ahmad Niaz, et al.
Materials Today Communications (2024) Vol. 38, pp. 108499-108499
Closed Access | Times Cited: 1

Evaporated Copper‐Based Perovskite Dynamic Memristors for Reservoir Computing Systems
Ruiheng Wang, He Shao, Jianyu Ming, et al.
Advanced Materials Technologies (2024)
Closed Access | Times Cited: 1

Convolutional neural network for high-performance reservoir computing using dynamic memristors
Yongjin Byun, Hyojin So, Sungjun Kim
Chaos Solitons & Fractals (2024) Vol. 188, pp. 115536-115536
Closed Access | Times Cited: 1

Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer
J. Kim, Yongjin Park, Jung‐Kyu Lee, et al.
The Journal of Chemical Physics (2023) Vol. 159, Iss. 21
Closed Access | Times Cited: 3

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