OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Ideal electrodes for monolayer boron phosphide and their device performance
Hong Li, Jiahui Li, Yuhang Liu, et al.
Applied Surface Science (2024) Vol. 655, pp. 159525-159525
Closed Access | Times Cited: 8
Hong Li, Jiahui Li, Yuhang Liu, et al.
Applied Surface Science (2024) Vol. 655, pp. 159525-159525
Closed Access | Times Cited: 8
Showing 8 citing articles:
Achieving n- and p-type Ohmic Contacts in Vertical Graphene/CrSi2N4 Heterostructure: Role of Electric Field
Meng Chen, Shuo Liu, Mengying Zhao, et al.
Physica E Low-dimensional Systems and Nanostructures (2025) Vol. 170, pp. 116201-116201
Closed Access
Meng Chen, Shuo Liu, Mengying Zhao, et al.
Physica E Low-dimensional Systems and Nanostructures (2025) Vol. 170, pp. 116201-116201
Closed Access
Functionalized Sc2N as Ohmic-contact electrodes for monolayer PtSe2: an ab initio study
Hong Li, Jiahui Li, Chaoyang Fan, et al.
Physical Chemistry Chemical Physics (2025)
Closed Access
Hong Li, Jiahui Li, Chaoyang Fan, et al.
Physical Chemistry Chemical Physics (2025)
Closed Access
Theoretical Calculation and Experimental Studies of Boron Phosphide Polycrystalline Synthesized at High Pressure and High Temperature
Peng Yang, Ziwei Li, Haidong Yu, et al.
Nanomaterials (2025) Vol. 15, Iss. 6, pp. 446-446
Open Access
Peng Yang, Ziwei Li, Haidong Yu, et al.
Nanomaterials (2025) Vol. 15, Iss. 6, pp. 446-446
Open Access
Ohmic MXene Contacts for Symmetric p- and n-type Monolayer WSe2 Schottky Barrier Field-Effect Transistors
Hong Li, Xinqi Yuan, Jingzhen Li, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 6, pp. 4187-4193
Closed Access | Times Cited: 3
Hong Li, Xinqi Yuan, Jingzhen Li, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 6, pp. 4187-4193
Closed Access | Times Cited: 3
Monolayer SnS2 Schottky barrier field effect transistors: effects of electrodes
Hong Li, Yunfeng Zhang, Fengbin Liu, et al.
Nanoscale (2024) Vol. 16, Iss. 38, pp. 18005-18013
Closed Access | Times Cited: 3
Hong Li, Yunfeng Zhang, Fengbin Liu, et al.
Nanoscale (2024) Vol. 16, Iss. 38, pp. 18005-18013
Closed Access | Times Cited: 3
Designing High-Performance Nanoscale Spin-MOSFET Devices by Using Two-Dimensional Half-Metallic Cr2Se3
Shaoxian Wang, Ya-Qi Kong, Shengyi Zhang, et al.
ACS Applied Materials & Interfaces (2024)
Closed Access | Times Cited: 1
Shaoxian Wang, Ya-Qi Kong, Shengyi Zhang, et al.
ACS Applied Materials & Interfaces (2024)
Closed Access | Times Cited: 1
First-principles study of novel triple-gate field-effect transistors based on 2D TMDs
Jiajian He, Wei Mei, Lianghua Hu, et al.
Next Materials (2024) Vol. 6, pp. 100303-100303
Closed Access
Jiajian He, Wei Mei, Lianghua Hu, et al.
Next Materials (2024) Vol. 6, pp. 100303-100303
Closed Access
High-performance cold-source field-effect transistors based on Cd3C2/ boron phosphide heterojunction
Zelong Ma, Danni Wang, Songyang Li, et al.
Materials Science and Engineering B (2024) Vol. 311, pp. 117804-117804
Closed Access
Zelong Ma, Danni Wang, Songyang Li, et al.
Materials Science and Engineering B (2024) Vol. 311, pp. 117804-117804
Closed Access
