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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

HfO2-based ferroelectric thin film and memory device applications in the post-Moore era: A review
Jiajia Liao, Siwei Dai, Ren‐Ci Peng, et al.
Fundamental Research (2023) Vol. 3, Iss. 3, pp. 332-345
Open Access | Times Cited: 25

Showing 25 citing articles:

Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films
Binjian Zeng, Shichang Xie, Sirui Zhang, et al.
Acta Materialia (2024) Vol. 272, pp. 119920-119920
Closed Access | Times Cited: 10
Enhanced Endurance and Imprint Properties in Hf0.5Zr0.5O2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy
Keyu Bao, Jiajia Liao, Fei Yan, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 8, pp. 4615-4623
Closed Access | Times Cited: 15
Large ferroelectric polarization and high dielectric constant in HfO2-based thin films via Hf0.5Zr0.5O2/ZrO2 nanobilayer engineering
Lei Liu Lei Liu, Chengfeng Jiang, Xi Yuan, et al.
Journal of Materiomics (2024)
Open Access | Times Cited: 4
Co-Sputtering Deposition of HfO2 Thin Films: Insights into Cu and Ag Doping Effects
Abdullah Akkaya, Osman Kahveci, Seval Hale Güler, et al.
Journal of Physics and Chemistry of Solids (2025), pp. 112686-112686
Closed Access
Depolarization Field Controllable HfZrOx-Based Ferroelectric Capacitors for Physical Reservoir Computing System
Euncho Seo, Eunjin Lim, J.C. Shin, et al.
ACS Applied Materials & Interfaces (2025)
Closed Access
High endurance and low coercive voltage ferroelectric tunnel junction by electrode engineering
Yefan Zhang, Xiaopeng Luo, Xiao Long, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 13
Closed Access
NVM in Data Storage: A Post-Optane Future
Sajad Karim, Johannes Wünsche, Michael Kühn, et al.
ACM Transactions on Storage (2025)
Closed Access
Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic applications
Livia Alexandra Gugoaşă, Cosmin Romanițan, Martino Aldrigo, et al.
Materials & Design (2023) Vol. 233, pp. 112194-112194
Open Access | Times Cited: 10
Surface Morphology and Optical Properties of Hafnium Oxide Thin Films Produced by Magnetron Sputtering
José de Jesús Araiza Ibarra, Leo Álvarez-Fraga, R. Gago, et al.
Materials (2023) Vol. 16, Iss. 15, pp. 5331-5331
Open Access | Times Cited: 9
Fluorite-structured antiferroelectric hafnium-zirconium oxide for emerging nonvolatile memory and neuromorphic-computing applications
Kangli Xu, Tianyu Wang, Jiajie Yu, et al.
Applied Physics Reviews (2024) Vol. 11, Iss. 2
Open Access | Times Cited: 3
Novel Two-Terminal Synapse/Neuron Based on an Antiferroelectric Hafnium Zirconium Oxide Device for Neuromorphic Computing
Kangli Xu, Tianyu Wang, Chen Lu, et al.
Nano Letters (2024) Vol. 24, Iss. 36, pp. 11170-11178
Closed Access | Times Cited: 3
Vertical ferroelectricity in van der Waals materials: Models and devices
Yuwen Zhang, Chunfeng Cui, Chaoyu He, et al.
Applied Physics Letters (2023) Vol. 123, Iss. 14
Open Access | Times Cited: 7
A phase-field simulation of easily switchable vortex structure for multilevel low-power ferroelectric memory
Zhonglei Liu, Jinming Cao, Zhi Wang, et al.
Journal of Materials Research and Technology (2024) Vol. 29, pp. 5241-5251
Open Access | Times Cited: 2
Structural characteristics and polarization switching behaviors in HfO2-ZrO2 ferroelectric nanolaminates
Zhibin Yang, Binjian Zeng, Changfan Ju, et al.
Journal of Alloys and Compounds (2024) Vol. 1004, pp. 175909-175909
Closed Access | Times Cited: 2
Physical Origin of Hafnium-based Ferroelectricity
Shuning Lv, Tengfei Cao, Zihe Wang, et al.
Deleted Journal (2024) Vol. 4, pp. 100010-100010
Open Access | Times Cited: 2
Improved epitaxial growth and multiferroic properties of Bi3Fe2Mn2Ox using CeO2 re-seeding layers
James P. Barnard, Jianan Shen, Yizhi Zhang, et al.
Nanoscale Advances (2023) Vol. 5, Iss. 21, pp. 5850-5858
Open Access | Times Cited: 5
The contradiction between thermodynamic and kinetic effects of stress-modulated antiferroelectricity in ZrO2 thin films
Qisheng He, Tao Yu, Binjian Zeng, et al.
Materials Horizons (2024) Vol. 11, Iss. 22, pp. 5684-5691
Closed Access | Times Cited: 1
Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf0.5Zr0.5O2 thin films
Kuan 宽 Liu 刘, Kai 楷 Liu 刘, Xingchang 醒昌 Zhang 张, et al.
Chinese Physics Letters (2024) Vol. 41, Iss. 11, pp. 117701-117701
Closed Access | Times Cited: 1
High Memory Window, Dual‐Gate Amorphous InGaZnO Thin‐Film Transistor with Ferroelectric Gate Insulator
Samiran Roy, Md Mobaidul Islam, Arqum Ali, et al.
physica status solidi (a) (2024)
Open Access | Times Cited: 1
Observation of stabilized negative capacitance effect in hafnium-based ferroic films
Leilei Qiao, Ruiting Zhao, Cheng Song, et al.
Materials Futures (2023) Vol. 3, Iss. 1, pp. 011001-011001
Open Access | Times Cited: 2
Emerging ferroelectric thin films: Applications and processing
Santosh Kurinec, Uwe Schroeder, Guru Subramanyam, et al.
Elsevier eBooks (2024), pp. 405-454
Closed Access
Enhancing Charge Trapping Performance of Hafnia Thin Films Using Sequential Plasma Atomic Layer Deposition
So Won Kim, Jae-Hoon Yoo, W.J. Park, et al.
Nanomaterials (2024) Vol. 14, Iss. 20, pp. 1686-1686
Open Access
Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films
Kai Liu, Feng Jin, Luyao Zhou, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 44, pp. 61239-61248
Closed Access
Improvement of leakage and fatigue properties of Hf0.5Zr0.5O2 thin film by embedding ultra-thin Al2O3 interlayer
Dao Wang, Zihao Lu, Jianing Wang, et al.
Journal of Materials Science (2024)
Closed Access
Novel physical properties in 5d electronic materials
Qinghua Zhang, Lin Gu
Fundamental Research (2023) Vol. 3, Iss. 3, pp. 311-312
Open Access
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