OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits
Rajesh Kumar Rajagopal, Alexei Kalaboukhov, Y.Q. Weng, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 15, pp. 19225-19234
Open Access | Times Cited: 11
Rajesh Kumar Rajagopal, Alexei Kalaboukhov, Y.Q. Weng, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 15, pp. 19225-19234
Open Access | Times Cited: 11
Showing 11 citing articles:
Neuromorphic Computing for Smart Agriculture
Siyi Lu, Xinqing Xiao
Agriculture (2024) Vol. 14, Iss. 11, pp. 1977-1977
Open Access | Times Cited: 12
Siyi Lu, Xinqing Xiao
Agriculture (2024) Vol. 14, Iss. 11, pp. 1977-1977
Open Access | Times Cited: 12
Engineering of Oxygen Vacancies in Electron Beam Rapid Thermal Annealed Zinc Ferrite for Environmental Monitoring applications Using Photosensitive Spectrum Analysis
Subha Krishna Rao, R. Rajesh Kumar, Shiek S. S. J. Ahmed, et al.
Materials Today Communications (2025), pp. 111540-111540
Closed Access
Subha Krishna Rao, R. Rajesh Kumar, Shiek S. S. J. Ahmed, et al.
Materials Today Communications (2025), pp. 111540-111540
Closed Access
Surfing the Growth Parameters in the Quest for Low‐Power, Forming‐Free, and Highly Stable TiOx Memristors for Nanoscale Electronics
Dilruba Hasina, Aparajita Mandal, S. K. Srivastava, et al.
Small (2025)
Closed Access
Dilruba Hasina, Aparajita Mandal, S. K. Srivastava, et al.
Small (2025)
Closed Access
Improvement of MoOx-based RRAM performance by rapid thermal annealing process and its application in artificial synapse
Xiaolei Xu, Wei Mi, Di Wang, et al.
Journal of Materials Science (2025) Vol. 60, Iss. 6, pp. 2933-2947
Closed Access
Xiaolei Xu, Wei Mi, Di Wang, et al.
Journal of Materials Science (2025) Vol. 60, Iss. 6, pp. 2933-2947
Closed Access
Quantum Dots for Resistive Switching Memory and Artificial Synapse
Gyeongpyo Kim, Seoyoung Park, Sungjun Kim
Nanomaterials (2024) Vol. 14, Iss. 19, pp. 1575-1575
Open Access | Times Cited: 3
Gyeongpyo Kim, Seoyoung Park, Sungjun Kim
Nanomaterials (2024) Vol. 14, Iss. 19, pp. 1575-1575
Open Access | Times Cited: 3
Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au–Co3O4 Thin-Film Memristors
Chuangye Yao, Jiacheng Li, Hongqiao Zhang, et al.
ACS Omega (2024) Vol. 9, Iss. 31, pp. 33941-33948
Open Access | Times Cited: 1
Chuangye Yao, Jiacheng Li, Hongqiao Zhang, et al.
ACS Omega (2024) Vol. 9, Iss. 31, pp. 33941-33948
Open Access | Times Cited: 1
Influence of point defects on charge transport in nickel ferrite Ni Fe 2 O 4
Nikita A. Fominykh, Jesaya Situmeang, Vladimir Stegailov, et al.
Computational Materials Science (2024) Vol. 246, pp. 113326-113326
Closed Access | Times Cited: 1
Nikita A. Fominykh, Jesaya Situmeang, Vladimir Stegailov, et al.
Computational Materials Science (2024) Vol. 246, pp. 113326-113326
Closed Access | Times Cited: 1
Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor
Akendra Singh Chabungbam, Dong‐Eun Kim, Yue Wang, et al.
Applied Surface Science Advances (2024) Vol. 25, pp. 100675-100675
Open Access | Times Cited: 1
Akendra Singh Chabungbam, Dong‐Eun Kim, Yue Wang, et al.
Applied Surface Science Advances (2024) Vol. 25, pp. 100675-100675
Open Access | Times Cited: 1
Demonstration of bipolar resistive memory fabricated using an ultra-thin BaTiOx resistive switching layer with a thickness of ∼5 nm
Chih-Chieh Hsu, Wen-Chin Wu, Zheng-Kai Xiao, et al.
Physica B Condensed Matter (2024) Vol. 697, pp. 416681-416681
Closed Access
Chih-Chieh Hsu, Wen-Chin Wu, Zheng-Kai Xiao, et al.
Physica B Condensed Matter (2024) Vol. 697, pp. 416681-416681
Closed Access
Permanent Strain Engineering of Molybdenum Disulfide Using Laser-Driven Stressors for Energy-Efficient Resistive Switching Memory Devices
Heeyoon Jang, Seok‐Ki Hyeong, Byeongjin Park, et al.
Nanomaterials (2024) Vol. 14, Iss. 23, pp. 1872-1872
Open Access
Heeyoon Jang, Seok‐Ki Hyeong, Byeongjin Park, et al.
Nanomaterials (2024) Vol. 14, Iss. 23, pp. 1872-1872
Open Access
Enhancing the nonvolatile properties of sol-gel-processed Y2O3 RRAM devices by suppressing oxygen vacancy formation
Sang‐Woo Lee, Yoonjin Cho, Seongwon Heo, et al.
Materials Science in Semiconductor Processing (2024) Vol. 188, pp. 109241-109241
Closed Access
Sang‐Woo Lee, Yoonjin Cho, Seongwon Heo, et al.
Materials Science in Semiconductor Processing (2024) Vol. 188, pp. 109241-109241
Closed Access
