
OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Universal p-Type Doping via Lewis Acid for 2D Transition-Metal Dichalcogenides
Zexin Li, Dongyan Li, Haoyun Wang, et al.
ACS Nano (2022) Vol. 16, Iss. 3, pp. 4884-4891
Closed Access | Times Cited: 37
Zexin Li, Dongyan Li, Haoyun Wang, et al.
ACS Nano (2022) Vol. 16, Iss. 3, pp. 4884-4891
Closed Access | Times Cited: 37
Showing 1-25 of 37 citing articles:
Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits
Lei Yin, Ruiqing Cheng, J. Ding, et al.
ACS Nano (2024) Vol. 18, Iss. 11, pp. 7739-7768
Closed Access | Times Cited: 28
Lei Yin, Ruiqing Cheng, J. Ding, et al.
ACS Nano (2024) Vol. 18, Iss. 11, pp. 7739-7768
Closed Access | Times Cited: 28
Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks
Yongping Dai, Qiyuan He, Yu Huang, et al.
Chemical Reviews (2024) Vol. 124, Iss. 9, pp. 5795-5845
Closed Access | Times Cited: 19
Yongping Dai, Qiyuan He, Yu Huang, et al.
Chemical Reviews (2024) Vol. 124, Iss. 9, pp. 5795-5845
Closed Access | Times Cited: 19
Substitutional doping of 2D transition metal dichalcogenides for device applications: Current status, challenges and prospects
Rajeev Kumar, Amit Kumar Shringi, H. L. Wood, et al.
Materials Science and Engineering R Reports (2025) Vol. 163, pp. 100946-100946
Closed Access | Times Cited: 2
Rajeev Kumar, Amit Kumar Shringi, H. L. Wood, et al.
Materials Science and Engineering R Reports (2025) Vol. 163, pp. 100946-100946
Closed Access | Times Cited: 2
P‐Type 2D Semiconductors for Future Electronics
Yunhai Xiong, Duo Xu, Yiping Feng, et al.
Advanced Materials (2022) Vol. 35, Iss. 50
Closed Access | Times Cited: 52
Yunhai Xiong, Duo Xu, Yiping Feng, et al.
Advanced Materials (2022) Vol. 35, Iss. 50
Closed Access | Times Cited: 52
Recent advances in CMOS-compatible synthesis and integration of 2D materials
Ajit K. Katiyar, J CHOI, Jong‐Hyun Ahn
Nano Convergence (2025) Vol. 12, Iss. 1
Open Access | Times Cited: 1
Ajit K. Katiyar, J CHOI, Jong‐Hyun Ahn
Nano Convergence (2025) Vol. 12, Iss. 1
Open Access | Times Cited: 1
Wavelength‐Controlled Photoconductance Polarity Switching via Harnessing Defects in Doped PdSe2 for Artificial Synaptic Features
Jiayang Jiang, Weiting Xu, Zhenhao Sun, et al.
Small (2023) Vol. 20, Iss. 13
Closed Access | Times Cited: 20
Jiayang Jiang, Weiting Xu, Zhenhao Sun, et al.
Small (2023) Vol. 20, Iss. 13
Closed Access | Times Cited: 20
Spatially selective p-type doping for constructing lateral WS2 p-n homojunction via low-energy nitrogen ion implantation
Yufan Kang, Yongfeng Pei, Dong He, et al.
Light Science & Applications (2024) Vol. 13, Iss. 1
Open Access | Times Cited: 8
Yufan Kang, Yongfeng Pei, Dong He, et al.
Light Science & Applications (2024) Vol. 13, Iss. 1
Open Access | Times Cited: 8
Controllable Phase Transformation by Van der Waals Encapsulation in Electrochemically Exfoliated PdSe2 Nanosheets
Qiaoyan Hao, Jiarui Huang, Jidong Liu, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 33
Closed Access | Times Cited: 7
Qiaoyan Hao, Jiarui Huang, Jidong Liu, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 33
Closed Access | Times Cited: 7
Recent advances in two-dimensional photovoltaic devices
Haoyun Wang, Xingyu Song, Zexin Li, et al.
Journal of Semiconductors (2024) Vol. 45, Iss. 5, pp. 051701-051701
Open Access | Times Cited: 7
Haoyun Wang, Xingyu Song, Zexin Li, et al.
Journal of Semiconductors (2024) Vol. 45, Iss. 5, pp. 051701-051701
Open Access | Times Cited: 7
Chemical Dopant-Free Controlled MoTe2/MoSe2 Heterostructure toward a Self-Driven Photodetector and Complementary Logic Circuits
Wennan Hu, Wang Hu, Jianguo Dong, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 14, pp. 18182-18190
Closed Access | Times Cited: 12
Wennan Hu, Wang Hu, Jianguo Dong, et al.
ACS Applied Materials & Interfaces (2023) Vol. 15, Iss. 14, pp. 18182-18190
Closed Access | Times Cited: 12
Dual-Electrically Configurable MoTe2/In2S3 Phototransistor toward Multifunctional Applications
Zhanxiong Qiu, Zhongtong Luo, Meifei Chen, et al.
ACS Nano (2024) Vol. 18, Iss. 39, pp. 27055-27064
Closed Access | Times Cited: 4
Zhanxiong Qiu, Zhongtong Luo, Meifei Chen, et al.
ACS Nano (2024) Vol. 18, Iss. 39, pp. 27055-27064
Closed Access | Times Cited: 4
Efficient n- and p-Type Molecular Dopings in Large-Scale Monolayer Dichalcogenides for High-Performance Field-Effect Transistors
Ye Seul Jung, Ji Yeon Kim, Wenhu Shen, et al.
ACS Nano (2025)
Closed Access
Ye Seul Jung, Ji Yeon Kim, Wenhu Shen, et al.
ACS Nano (2025)
Closed Access
Threshold Voltage Control through Solvent Doping of Monolayer MoS2 Transistors
Kathryn M. Neilson, Charles C. Mokhtarzadeh, Marc Jaikissoon, et al.
Nano Letters (2025)
Closed Access
Kathryn M. Neilson, Charles C. Mokhtarzadeh, Marc Jaikissoon, et al.
Nano Letters (2025)
Closed Access
Defect engineering of two-dimensional materials towards next-generation electronics and optoelectronics
Jie Jiang, Peng Yang, Juin J. Liou, et al.
Nano Research (2022) Vol. 16, Iss. 2, pp. 3104-3124
Closed Access | Times Cited: 18
Jie Jiang, Peng Yang, Juin J. Liou, et al.
Nano Research (2022) Vol. 16, Iss. 2, pp. 3104-3124
Closed Access | Times Cited: 18
Ambipolar Transport in Phosphorus-Implanted WS2 Monolayers
Yi Li, Jun Yang, Fangchao Long, et al.
ACS Applied Electronic Materials (2025)
Open Access
Yi Li, Jun Yang, Fangchao Long, et al.
ACS Applied Electronic Materials (2025)
Open Access
Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications
Zhaojun Li, Hope Bretscher, Akshay Rao
Nanoscale (2024) Vol. 16, Iss. 20, pp. 9728-9741
Open Access | Times Cited: 3
Zhaojun Li, Hope Bretscher, Akshay Rao
Nanoscale (2024) Vol. 16, Iss. 20, pp. 9728-9741
Open Access | Times Cited: 3
Electrical Polarity Modulation in V‐Doped Monolayer WS2 for Homogeneous CMOS Inverters
Boxiang Gao, Weijun Wang, You Meng, et al.
Small (2024) Vol. 20, Iss. 43
Open Access | Times Cited: 3
Boxiang Gao, Weijun Wang, You Meng, et al.
Small (2024) Vol. 20, Iss. 43
Open Access | Times Cited: 3
Defect Engineering of 2D Semiconductors for Dual Control of Emission and Carrier Polarity
Ying Chen, Huawei Liu, Guoliang Yu, et al.
Advanced Materials (2023) Vol. 36, Iss. 14
Closed Access | Times Cited: 7
Ying Chen, Huawei Liu, Guoliang Yu, et al.
Advanced Materials (2023) Vol. 36, Iss. 14
Closed Access | Times Cited: 7
一种实现单层MoS2光致发光显著增强的有效缺陷工 程策略
Ying Chen, Zhuorui Huang, Huawei Liu, et al.
Science China Materials (2024) Vol. 67, Iss. 7, pp. 2232-2238
Closed Access | Times Cited: 2
Ying Chen, Zhuorui Huang, Huawei Liu, et al.
Science China Materials (2024) Vol. 67, Iss. 7, pp. 2232-2238
Closed Access | Times Cited: 2
Chemical Vapor Deposition of Quaternary 2D BiCuSeO p‐Type Semiconductor with Intrinsic Degeneracy
Jie Li, Yan Zhang, Junrong Zhang, et al.
Advanced Materials (2022) Vol. 34, Iss. 50
Closed Access | Times Cited: 11
Jie Li, Yan Zhang, Junrong Zhang, et al.
Advanced Materials (2022) Vol. 34, Iss. 50
Closed Access | Times Cited: 11
Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration
Zhuofan Chen, Xiaonan Deng, Simian Zhang, et al.
International Journal of Extreme Manufacturing (2023) Vol. 5, Iss. 4, pp. 042001-042001
Open Access | Times Cited: 6
Zhuofan Chen, Xiaonan Deng, Simian Zhang, et al.
International Journal of Extreme Manufacturing (2023) Vol. 5, Iss. 4, pp. 042001-042001
Open Access | Times Cited: 6
具有亚2-nm沟道长度的二维垂直p-n结二极管
Haoyun Wang, Xingyu Song, Dongyan Li, et al.
Science China Materials (2023) Vol. 66, Iss. 9, pp. 3637-3643
Open Access | Times Cited: 6
Haoyun Wang, Xingyu Song, Dongyan Li, et al.
Science China Materials (2023) Vol. 66, Iss. 9, pp. 3637-3643
Open Access | Times Cited: 6
2D SnO/MoO3 van der Waals heterojunction with tunable electronic behavior for multifunctional applications: DFT calculations
Yuli Ma, Junyu Lang
Applied Surface Science (2022) Vol. 611, pp. 155719-155719
Closed Access | Times Cited: 8
Yuli Ma, Junyu Lang
Applied Surface Science (2022) Vol. 611, pp. 155719-155719
Closed Access | Times Cited: 8
Modulating p-type doping of two dimensional material palladium diselenide
Jiali Yang, Yu Liu, E.R. Wang, et al.
Nano Research (2023) Vol. 17, Iss. 4, pp. 3232-3244
Open Access | Times Cited: 4
Jiali Yang, Yu Liu, E.R. Wang, et al.
Nano Research (2023) Vol. 17, Iss. 4, pp. 3232-3244
Open Access | Times Cited: 4
Electrical Properties of Electrochemically Exfoliated 2D Transition Metal Dichalcogenides Transistors for Complementary Metal‐Oxide‐Semiconductor Electronics
Taoyu Zou, Soonhyo Kim, Youjin Reo, et al.
Advanced Electronic Materials (2024) Vol. 10, Iss. 6
Open Access | Times Cited: 1
Taoyu Zou, Soonhyo Kim, Youjin Reo, et al.
Advanced Electronic Materials (2024) Vol. 10, Iss. 6
Open Access | Times Cited: 1