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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Origins of genuine Ohmic van der Waals contact between indium and MoS2
Bum-Kyu Kim, Tae-Hyung Kim, Dong-Hwan Choi, et al.
npj 2D Materials and Applications (2021) Vol. 5, Iss. 1
Open Access | Times Cited: 67

Showing 1-25 of 67 citing articles:

P-type electrical contacts for 2D transition-metal dichalcogenides
Yan Wang, Jong Chan Kim, Yang Li, et al.
Nature (2022) Vol. 610, Iss. 7930, pp. 61-66
Open Access | Times Cited: 210
Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects
Xiaochi Liu, Min Sup Choi, E. H. Hwang, et al.
Advanced Materials (2021) Vol. 34, Iss. 15
Open Access | Times Cited: 202
Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
Qianqian Wang, Liemao Cao, Shi‐Jun Liang, et al.
npj 2D Materials and Applications (2021) Vol. 5, Iss. 1
Open Access | Times Cited: 150
Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer
Ashok Mondal, Chandan Biswas, Sehwan Park, et al.
Nature Nanotechnology (2023) Vol. 19, Iss. 1, pp. 34-43
Open Access | Times Cited: 72
van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides
Likuan Ma, Yiliu Wang, Yuan Liu
Chemical Reviews (2024) Vol. 124, Iss. 5, pp. 2583-2616
Closed Access | Times Cited: 25
Two-Dimensional Transition Metal Dichalcogenides: A Theory and Simulation Perspective
Sunny Gupta, Junjie Zhang, Jincheng Lei, et al.
Chemical Reviews (2025)
Closed Access | Times Cited: 4
Enhanced Performance of WS2 Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts
Nhat Anh Nguyen Phan, Hamin Noh, Jihoon Kim, et al.
Small (2022) Vol. 18, Iss. 13
Open Access | Times Cited: 48
Electrical Contacts With 2D Materials: Current Developments and Future Prospects
Saima Batool, Muhammad Idrees, Su‐Ting Han, et al.
Small (2023) Vol. 19, Iss. 12
Closed Access | Times Cited: 25
Semimetal contacts to monolayer semiconductor: weak metalization as an effective mechanism to Schottky barrier lowering
Tong Su, Yueyan Li, Qianqian Wang, et al.
Journal of Physics D Applied Physics (2023) Vol. 56, Iss. 23, pp. 234001-234001
Open Access | Times Cited: 25
When 2D materials meet metals
Luka Pirker, J. Honolka, Matěj Velický, et al.
2D Materials (2024) Vol. 11, Iss. 2, pp. 022003-022003
Open Access | Times Cited: 11
Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts
Xiaodong Zhang, Chenxi Huang, Zeyu Li, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 11
Direct Optoelectronic Imaging of 2D Semiconductor–3D Metal Buried Interfaces
Kiyoung Jo, Pawan Kumar, Joseph Orr, et al.
ACS Nano (2021) Vol. 15, Iss. 3, pp. 5618-5630
Open Access | Times Cited: 42
Metal Films on Two-Dimensional Materials: van der Waals Contacts and Raman Enhancement
Maheera Abdul Ghani, Soumya Sarkar, Jung-In Lee, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 6, pp. 7399-7405
Open Access | Times Cited: 6
Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS2 Field Effect Transistors
Sungwon Lee, Xinbiao Wang, Hoseong Shin, et al.
ACS Applied Electronic Materials (2024) Vol. 6, Iss. 6, pp. 4149-4158
Closed Access | Times Cited: 6
Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors
Xintong Li, Peng Zhou, Xuan Hu, et al.
ACS Nano (2023) Vol. 17, Iss. 13, pp. 12798-12808
Open Access | Times Cited: 15
Impact of phase transformation on MoS2 thin films on high temperature and its concomitant role in In-MoS2/P-Si structured PN junction diodes
T. Sasikala, K. Shanmugasundaram, P. Thirunavukkarasu, et al.
Optical Materials (2022) Vol. 131, pp. 112584-112584
Closed Access | Times Cited: 22
Drain-Induced Multifunctional Ambipolar Electronics Based on Junctionless MoS2
Jungi Song, Suyeon Lee, Yongwook Seok, et al.
ACS Nano (2024) Vol. 18, Iss. 5, pp. 4320-4328
Closed Access | Times Cited: 4
Laser-induced graphene van der Waals contact-enabled high-performance 2D-materials-based field-effect transistor
Mingyuan Sun, Yunhong Zhang, Shuai Wang, et al.
Carbon (2024) Vol. 225, pp. 119151-119151
Closed Access | Times Cited: 4
Improvement of Contact Resistance and 3D Integration of 2D Material Field‐Effect Transistors Using Semi‐Metallic PtSe2 Contacts
Jae Eun Seo, Minseung Gyeon, Jisoo Seok, et al.
Advanced Functional Materials (2024) Vol. 34, Iss. 44
Open Access | Times Cited: 4
Contact Resistance Engineering in WS2-Based FET with MoS2 Under-Contact Interlayer: A Statistical Approach
Małgorzata Giza, Michał Świniarski, Arkadiusz P. Gertych, et al.
ACS Applied Materials & Interfaces (2024) Vol. 16, Iss. 36, pp. 48556-48564
Open Access | Times Cited: 4
Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices
Xiongfang Liu, Kaijian Xing, Chi Sin Tang, et al.
Progress in Materials Science (2024), pp. 101390-101390
Closed Access | Times Cited: 4
Electrically tunable metal–semiconductor behavior in 2H-MoTe2
B. Manoj Kumar, Shreya Gaonkar, Rashed H. Lone, et al.
Journal of Applied Physics (2025) Vol. 137, Iss. 5
Open Access
High Current and Carrier Densities in 2D MoS2/AlScN Field-Effect Transistors via Ferroelectric Gating and Ohmic Contacts
Seunguk Song, Kwan‐Ho Kim, Rachael Keneipp, et al.
ACS Nano (2025)
Closed Access
Uncovering Semiconductor Band Structure Effects in Au/n‐WS2 Schottky Devices Using Ballistic Electron Emission Microscopy
Calvin Pei Yu Wong, Hiroyo Kawai, Zhuojun Jiang, et al.
physica status solidi (b) (2025)
Closed Access
High-Performance Negative Capacitance Field-Effect Transistors with Synthetic Monolayer MoS2
Moonyoung Jung, Hyo‐Bae Kim, Yungyeong Park, et al.
ACS Nano (2025)
Closed Access
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