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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Anomalous valley Hall effect in antiferromagnetic monolayers
Wenhui Du, Rui Peng, Zhonglin He, et al.
npj 2D Materials and Applications (2022) Vol. 6, Iss. 1
Open Access | Times Cited: 43

Showing 1-25 of 43 citing articles:

Recent Advances in Two-Dimensional Ferromagnetic Materials-Based van der Waals Heterostructures
Zhiheng Zhang, Rong Sun, Zhongchang Wang
ACS Nano (2025)
Closed Access | Times Cited: 3
Strain-engineering spin-valley locking effect in altermagnetic monolayer with multipiezo properties
Yuqian Jiang, Xinge Zhang, Haoyue Bai, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 5
Open Access | Times Cited: 3
Enforced Symmetry Breaking for Anomalous Valley Hall Effect in Two-Dimensional Hexagonal Lattices
Yongqian Zhu, Jia‐Tao Sun, Jinbo Pan, et al.
Physical Review Letters (2025) Vol. 134, Iss. 4
Open Access | Times Cited: 2
Layer Hall Effect in Multiferroic Two-Dimensional Materials
Yangyang Feng, Ying Dai, Baibiao Huang, et al.
Nano Letters (2023) Vol. 23, Iss. 11, pp. 5367-5372
Closed Access | Times Cited: 37
Layer-locked anomalous valley Hall effect in a two-dimensional A -type tetragonal antiferromagnetic insulator
San‐Dong Guo, Wei Xu, Yang Xue, et al.
Physical review. B./Physical review. B (2024) Vol. 109, Iss. 13
Closed Access | Times Cited: 13
Electric-field-tuned anomalous valley Hall effect in A -type hexagonal antiferromagnetic monolayers
San‐Dong Guo, Yu-Ling Tao, Zi-Yang Zhuo, et al.
Physical review. B./Physical review. B (2024) Vol. 109, Iss. 13
Closed Access | Times Cited: 11
Nonconservation of the Valley Density and Its Implications for the Observation of the Valley Hall Effect
Alexander Kazantsev, Amelia Mills, Eoin O’Neill, et al.
Physical Review Letters (2024) Vol. 132, Iss. 10
Open Access | Times Cited: 10
Valleytronics in two-dimensional magnetic materials
Chaobo Luo, Zongyu Huang, Hui Qiao, et al.
Journal of Physics Materials (2024) Vol. 7, Iss. 2, pp. 022006-022006
Open Access | Times Cited: 9
Large spontaneous valley polarization and anomalous valley Hall effect in antiferromagnetic monolayer Fe2CF2
San‐Dong Guo, Liguo Zhang, Yiwen Zhang, et al.
Physical review. B./Physical review. B (2024) Vol. 110, Iss. 2
Closed Access | Times Cited: 9
Valley Hall effect in graphene-like SnX ( X=Si , Ge) buckled monolayers with high charge carrier mobility and low lattice thermal conductivity
Manish Kumar Mohanta, Fathima IS, Abir De Sarkar
Physical review. B./Physical review. B (2023) Vol. 107, Iss. 3
Closed Access | Times Cited: 22
Reversible nonvolatile control of anomalous valley Hall effect in a multiferroic van der Waals heterostructure
Chengan Lei, Xinru Li, Yandong Ma, et al.
Physical review. B./Physical review. B (2023) Vol. 108, Iss. 15
Closed Access | Times Cited: 17
Realizing altermagnetism in two-dimensional metal–organic framework semiconductors with electric-field-controlled anisotropic spin current
Yixuan Che, Haifeng Lv, Xiaojun Wu, et al.
Chemical Science (2024) Vol. 15, Iss. 34, pp. 13853-13863
Open Access | Times Cited: 6
Progress on two-dimensional ferrovalley materials
Ping Li, Bang 邦 Liu 刘, Shuai 帅 Chen 陈, et al.
Chinese Physics B (2023) Vol. 33, Iss. 1, pp. 017505-017505
Closed Access | Times Cited: 14
Engineering Second‐Order Corner States in 2D Multiferroics
Yingxi Bai, Ning Mao, Runhan Li, et al.
Small (2023) Vol. 19, Iss. 14
Closed Access | Times Cited: 13
Orbital contribution to the regulation of the spin-valley coupling in antiferromagnetic monolayer MnPTe3
Wenzhe Zhou, Guibo Zheng, Aolin Li, et al.
Physical review. B./Physical review. B (2023) Vol. 107, Iss. 3
Closed Access | Times Cited: 11
Valleytronics Candidate with Spontaneous Valley Polarization in A-Type Antiferromagnetic MoSi2N4/MnPS3 Heterostructure
Xiao-Jing Dong, Jia Kang, Wei-xiao Ji, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 4, pp. 2046-2054
Closed Access | Times Cited: 11
Electrically switchable ferrovalley, anomalous valley Hall effect and intrinsic circular dichroism in two-dimensional antiferromagnets
Dehe Zhang, Wenzhe Zhou, Guibo Zheng, et al.
Chinese Journal of Physics (2025)
Closed Access
Antiferromagnetism-assisted oblique-spin quantum entanglement
Zixuan Ding, Ruotong Li, Donghao Wang, et al.
Physical Review Applied (2025) Vol. 23, Iss. 1
Closed Access
Spin-layer coupling in an altermagnetic multilayer: A design principle for spintronics
Jianke Tian, Jia Li, Hengbo Liu, et al.
Physical review. B./Physical review. B (2025) Vol. 111, Iss. 3
Closed Access
Gate-field controllable Zeeman-like spin splitting in layered A-type antiferromagnets
Y.C. Chen, M. Umar Farooq, Li Huang
Physical review. B./Physical review. B (2025) Vol. 111, Iss. 5
Closed Access
Photoinduced magnetooptical response in monolayer transition metal dichalcogenides
Haixia Da, Qi Song, Huapeng Ye
Journal of Applied Physics (2025) Vol. 137, Iss. 6
Open Access
Ferroelectric tuning of the valley polarized metal-semiconductor transition in Mn2P2S3Se3
Hanbo Sun, Yewei Ren, Chao Wu, et al.
Physical Review Applied (2025) Vol. 23, Iss. 3
Closed Access
Anomalous valley Hall effect in monolayer chromium-based triple- Q magnets
Xiu-Cai Jiang, Li-Ya Qiao, Yu‐Zhong Zhang
Physical review. B./Physical review. B (2025) Vol. 111, Iss. 14
Closed Access
Coupling of ferroelectric and valley properties in 2D materials
Jun‐Ding Zheng, Yi‐Feng Zhao, Yi‐Fan Tan, et al.
Journal of Applied Physics (2022) Vol. 132, Iss. 12
Open Access | Times Cited: 16
Combined piezoelectricity, valley splitting and Dzyaloshinskii–Moriya interaction in Janus GdXY (X, Y = Cl, Br, I) magnetic semiconductors
Dehe Zhang, Aolin Li, Bei Zhang, et al.
Physical Chemistry Chemical Physics (2023) Vol. 25, Iss. 12, pp. 8600-8607
Closed Access | Times Cited: 7
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