OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Regulation of oxygen vacancy on behaviors of memristors based on amorphous ZnTiSnO films
Siqin Li, Jigang Du, Jianguo Lü, et al.
Journal of Materials Chemistry C (2022) Vol. 10, Iss. 45, pp. 17154-17162
Closed Access | Times Cited: 14
Siqin Li, Jigang Du, Jianguo Lü, et al.
Journal of Materials Chemistry C (2022) Vol. 10, Iss. 45, pp. 17154-17162
Closed Access | Times Cited: 14
Showing 14 citing articles:
All‐Optically Controlled Artificial Synapse Based on Full Oxides for Low‐Power Visible Neural Network Computing
Ruqi Yang, Yue Wang, Siqin Li, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 10
Closed Access | Times Cited: 38
Ruqi Yang, Yue Wang, Siqin Li, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 10
Closed Access | Times Cited: 38
Amorphous oxide semiconductors: From fundamental properties to practical applications
Bojing Lu, Fei Zhuge, Yi Zhao, et al.
Current Opinion in Solid State and Materials Science (2023) Vol. 27, Iss. 4, pp. 101092-101092
Closed Access | Times Cited: 22
Bojing Lu, Fei Zhuge, Yi Zhao, et al.
Current Opinion in Solid State and Materials Science (2023) Vol. 27, Iss. 4, pp. 101092-101092
Closed Access | Times Cited: 22
Dual-input optoelectronic synaptic transistor based on amorphous ZnAlSnO for multi-target neuromorphic simulation
Ruqi Yang, Yang Tian, Lingxiang Hu, et al.
Materials Today Nano (2024) Vol. 26, pp. 100480-100480
Closed Access | Times Cited: 8
Ruqi Yang, Yang Tian, Lingxiang Hu, et al.
Materials Today Nano (2024) Vol. 26, pp. 100480-100480
Closed Access | Times Cited: 8
Gradual conductance modulation by defect reorganization in amorphous oxide memristors
Siqin Li, Jigang Du, Bojing Lu, et al.
Materials Horizons (2023) Vol. 10, Iss. 12, pp. 5643-5655
Closed Access | Times Cited: 11
Siqin Li, Jigang Du, Bojing Lu, et al.
Materials Horizons (2023) Vol. 10, Iss. 12, pp. 5643-5655
Closed Access | Times Cited: 11
Surfing the Growth Parameters in the Quest for Low‐Power, Forming‐Free, and Highly Stable TiOx Memristors for Nanoscale Electronics
Dilruba Hasina, Aparajita Mandal, S. K. Srivastava, et al.
Small (2025)
Closed Access
Dilruba Hasina, Aparajita Mandal, S. K. Srivastava, et al.
Small (2025)
Closed Access
Buried Au nanoparticles-assisted enhancement of local electric field toward improved resistance switching in Au/ZnO/Si structures
Zhicheng Lv, Mingming Chen, Q L Zhang, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 5
Closed Access
Zhicheng Lv, Mingming Chen, Q L Zhang, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 5
Closed Access
Self‐repairable, high‐uniform conductive‐bridge random access memory based on amorphous NbSe2
Bojing Lu, Dunan Hu, Ruqi Yang, et al.
SmartMat (2023)
Open Access | Times Cited: 9
Bojing Lu, Dunan Hu, Ruqi Yang, et al.
SmartMat (2023)
Open Access | Times Cited: 9
Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices
Carlos Silva, Jonas Deuermeier, Weidong Zhang, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 11
Open Access | Times Cited: 7
Carlos Silva, Jonas Deuermeier, Weidong Zhang, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 11
Open Access | Times Cited: 7
Artificial neurosynaptic device based on amorphous oxides for artificial neural network constructing
Qiujiang Chen, Ruqi Yang, Dunan Hu, et al.
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 25, pp. 9165-9174
Closed Access | Times Cited: 2
Qiujiang Chen, Ruqi Yang, Dunan Hu, et al.
Journal of Materials Chemistry C (2024) Vol. 12, Iss. 25, pp. 9165-9174
Closed Access | Times Cited: 2
Enhanced analog switching and neuromorphic performance of ZnO-based memristors with indium tin oxide electrodes for high-accuracy pattern recognition
Muhammad Ismail, Maria Rasheed, Yongjin Park, et al.
The Journal of Chemical Physics (2024) Vol. 161, Iss. 13
Closed Access | Times Cited: 2
Muhammad Ismail, Maria Rasheed, Yongjin Park, et al.
The Journal of Chemical Physics (2024) Vol. 161, Iss. 13
Closed Access | Times Cited: 2
Low‐operation voltage conductive‐bridge random access memory based on amorphous NbS2
Bojing Lu, Dunan Hu, Min Wu, et al.
Smart Molecules (2023) Vol. 1, Iss. 2
Open Access | Times Cited: 4
Bojing Lu, Dunan Hu, Min Wu, et al.
Smart Molecules (2023) Vol. 1, Iss. 2
Open Access | Times Cited: 4
ZnO-based artificial synaptic diodes with zero-read voltage for neural network computing
Rulin Yang, Titao Li, Dunan Hu, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 17
Closed Access | Times Cited: 1
Rulin Yang, Titao Li, Dunan Hu, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 17
Closed Access | Times Cited: 1
Neuromorphic memristor based on amorphous InAlZnO film for synaptic behavior simulation
Yimeng Xu, Xu Han, Weidong Xu, et al.
Applied Physics Letters (2023) Vol. 123, Iss. 25
Closed Access | Times Cited: 2
Yimeng Xu, Xu Han, Weidong Xu, et al.
Applied Physics Letters (2023) Vol. 123, Iss. 25
Closed Access | Times Cited: 2
Self-healing memristors based on SA/PVA/STB hydrogel
Fenjing Wang, Kejian Chen, Xuran Yi, et al.
Journal of Materials Science Materials in Electronics (2023) Vol. 34, Iss. 20
Closed Access | Times Cited: 1
Fenjing Wang, Kejian Chen, Xuran Yi, et al.
Journal of Materials Science Materials in Electronics (2023) Vol. 34, Iss. 20
Closed Access | Times Cited: 1
