OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Two-dimensional Janus MGeSiP4 (M = Ti, Zr, and Hf) with an indirect band gap and high carrier mobilities: first-principles calculations
Thi Hiep Nguyen, Nguyen Pham Quynh Anh, Huynh V. Phuc, et al.
Physical Chemistry Chemical Physics (2023) Vol. 25, Iss. 12, pp. 8779-8788
Closed Access | Times Cited: 14

Showing 14 citing articles:

Negative Poisson's ratio and anisotropic carrier mobility in ternary Janus Si2XY (X/Y= S, Se, Te): First-principles prediction
Thi Hiep Nguyen, Cuong Q. Nguyen, Nguyen N. Hieu
Applied Physics Letters (2023) Vol. 123, Iss. 9
Closed Access | Times Cited: 21

Strain-engineered ZrSSe/Ga2SSe vdW heterostructure with enhanced visible light harvesting and high solar-to-hydrogen efficiency
Isam Allaoui, A. El Kenz, A. Benyoussef, et al.
Micro and Nanostructures (2025), pp. 208174-208174
Closed Access

Theoretical evaluation of monolayer MA2Z4 (M = Ti, Zr, or Hf; A = Si or Ge; and Z = P or As) family as promising candidates for lithium–sulfur batteries
Jiguang Du, Xuying Zhou, Xiujuan Cheng, et al.
Journal of Colloid and Interface Science (2024)
Closed Access | Times Cited: 3

Moderate direct band-gap energies and high carrier mobilities of Janus XWSiP2 (X = S, Se, Te) monolayers via first-principles investigation
Thi Hiep Nguyen, Cuong Q. Nguyen, Vo T. T. Vi, et al.
Physical Chemistry Chemical Physics (2023) Vol. 25, Iss. 32, pp. 21468-21478
Closed Access | Times Cited: 7

Janus TiSi Z 3H ( Z = N, P, As) monolayers with large out-of-plane piezoelectricity and high electron mobility: first-principles study
Tuan V. Vu, Kieu My Bui, Khanh V. Hoang, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 34, pp. 345304-345304
Closed Access | Times Cited: 2

Large piezoelectric responses and ultra-high carrier mobility in Janus HfGeZ3H (Z = N, P, As) monolayers: a first-principles study
Tuan V. Vu, Huynh V. Phuc, Le T.T. Phuong, et al.
Nanoscale Advances (2024) Vol. 6, Iss. 16, pp. 4128-4136
Open Access | Times Cited: 2

Crystal lattice and electronic and transport properties of Janus ZrSiSZ2 (Z = N, P, As) monolayers by first-principles investigations
Nguyen Pham Quynh Anh, Thi Hiep Nguyen, Dung V. Lu, et al.
Nanoscale Advances (2023) Vol. 5, Iss. 23, pp. 6705-6713
Open Access | Times Cited: 4

First-principles insights on electronic and transport properties of novel ternary AlMX3 and quaternary Janus Al<…
Tuan V. Vu, A. I. Kartamyshev, Minh D. Nguyen, et al.
Materials Science in Semiconductor Processing (2024) Vol. 181, pp. 108590-108590
Closed Access | Times Cited: 1

Investigation of 2D Janus Al2OS/Ga2SSe van der Waals heterojunction as next-generation thermoelectric and photocatalytic devices
Francis Opoku, Albert Aniagyei, Osei Akoto, et al.
Next Materials (2023) Vol. 1, Iss. 4, pp. 100042-100042
Open Access | Times Cited: 2

Large‐Gap Quantum Spin Hall State in Double‐Transition‐Metal Homologous Compounds of WSi2N4: A First‐Principles Study
Yanli Wang, Yi Ding
physica status solidi (RRL) - Rapid Research Letters (2023) Vol. 18, Iss. 3
Closed Access | Times Cited: 2

Novel Janus α-Au4XY (X/Y = S, Se, Te) monolayers with ultra-high carrier mobility: A first-principles study
Nguyễn Xuân Vinh, Le C. Nhan, Đặng Xuân Dự, et al.
Materials Science in Semiconductor Processing (2024) Vol. 186, pp. 109045-109045
Closed Access

High stability Janus structures of two dimensional Fe3GeTe2 monolayer by first-principles investigations
Thi Hiep Nguyen, Dinh Thanh Khan, Lê Thị Phương Thảo, et al.
Materials Science in Semiconductor Processing (2024) Vol. 186, pp. 109055-109055
Closed Access

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