
OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Electronic and magnetic properties of GeS monolayer effected by point defects and doping
Phuong Thuy Bui, Võ Văn Ớn, J. Guerrero-Sánchez, et al.
RSC Advances (2024) Vol. 14, Iss. 4, pp. 2481-2490
Open Access | Times Cited: 11
Phuong Thuy Bui, Võ Văn Ớn, J. Guerrero-Sánchez, et al.
RSC Advances (2024) Vol. 14, Iss. 4, pp. 2481-2490
Open Access | Times Cited: 11
Showing 11 citing articles:
Effects of vacancy defect and nonmetal (N, P, and as) impurities on electronic and magnetic properties of nonmagnetic-semiconductor GeO2 monolayer: A first-principles investigation
Mojtaba Gholami
Chemical Physics (2025), pp. 112732-112732
Closed Access
Mojtaba Gholami
Chemical Physics (2025), pp. 112732-112732
Closed Access
DFT Investigations of Defect Engineering in GeS Monolayers: Impact on Electronic Structure, Stability, and Optical Properties
Safdar Mehmood, Yang Xia, Furong Qu, et al.
Journal of Materials Science Materials in Electronics (2025) Vol. 36, Iss. 11
Closed Access
Safdar Mehmood, Yang Xia, Furong Qu, et al.
Journal of Materials Science Materials in Electronics (2025) Vol. 36, Iss. 11
Closed Access
Antiferromagnetism in GaS monolayer doped with TM-TM pair (TM = V, Cr, Mn, and Fe)
D.M. Hoat, Nguyễn Thành Tiên, Duy Khanh Nguyen, et al.
Physical Chemistry Chemical Physics (2024) Vol. 26, Iss. 27, pp. 18657-18666
Closed Access | Times Cited: 1
D.M. Hoat, Nguyễn Thành Tiên, Duy Khanh Nguyen, et al.
Physical Chemistry Chemical Physics (2024) Vol. 26, Iss. 27, pp. 18657-18666
Closed Access | Times Cited: 1
Synergistic effects of vacancy and doping at Ge sublattices on the electronic and magnetic properties of new Janus Ge2PAs monolayer
Huynh Thi Phuong Thuy, Võ Văn Ớn, R. Ponce‐Pérez, et al.
Materials Science in Semiconductor Processing (2024) Vol. 184, pp. 108826-108826
Closed Access | Times Cited: 1
Huynh Thi Phuong Thuy, Võ Văn Ớn, R. Ponce‐Pérez, et al.
Materials Science in Semiconductor Processing (2024) Vol. 184, pp. 108826-108826
Closed Access | Times Cited: 1
Predictions of New Ktasn Half-Heusler Compound for Spintronic, Thermoelectric and Optoelectronic Applications: A First-Principles Study
Sabir Makhlouf, M. Labidi, Seifeddine Amara, et al.
(2024)
Closed Access
Sabir Makhlouf, M. Labidi, Seifeddine Amara, et al.
(2024)
Closed Access
A systematic investigation of chromium and vanadium impurities in Janus Ga2SO monolayer towards spintronic applications
Duy Khanh Nguyen, Nguyễn Thành Tiên, J. Guerrero-Sánchez, et al.
Physical Chemistry Chemical Physics (2024) Vol. 26, Iss. 26, pp. 18426-18434
Closed Access
Duy Khanh Nguyen, Nguyễn Thành Tiên, J. Guerrero-Sánchez, et al.
Physical Chemistry Chemical Physics (2024) Vol. 26, Iss. 26, pp. 18426-18434
Closed Access
Boosting Efficiency in Dual-Absorber RbPbBr3 Perovskite Solar Cell: The Role of Two-Dimensional GeS and SnS2 as Electron Transport Layers
Shahram Rafiee Rafat, Zahra Ahangari, Mohammad Mahdi Ahadian, et al.
Physica Scripta (2024) Vol. 99, Iss. 10, pp. 1059b7-1059b7
Closed Access
Shahram Rafiee Rafat, Zahra Ahangari, Mohammad Mahdi Ahadian, et al.
Physica Scripta (2024) Vol. 99, Iss. 10, pp. 1059b7-1059b7
Closed Access
Raising the Curie Temperature of Two-Dimensional Semiconducting CrSbr by van der Waals Coupling with In-Plane Ferroelectric GeS
X. J. Zhou, Mingguo Li, Baozeng Zhou
The Journal of Physical Chemistry C (2024) Vol. 128, Iss. 45, pp. 19398-19409
Closed Access
X. J. Zhou, Mingguo Li, Baozeng Zhou
The Journal of Physical Chemistry C (2024) Vol. 128, Iss. 45, pp. 19398-19409
Closed Access
Electronic and Magnetic Properties of Moi3 Monolayer Effected by Point Defects and Rare Earth Metal Doping
Guoxiang Chen, Wang Qu, Qi Zhang, et al.
(2024)
Closed Access
Guoxiang Chen, Wang Qu, Qi Zhang, et al.
(2024)
Closed Access
Predictions of new KTaSn half-Heusler compound for spintronic, thermoelectric and optoelectronic applications: A first-principles study
Sabir Makhlouf, M. Labidi, Seif Eddine Amara, et al.
Materials Science in Semiconductor Processing (2024) Vol. 186, pp. 109067-109067
Closed Access
Sabir Makhlouf, M. Labidi, Seif Eddine Amara, et al.
Materials Science in Semiconductor Processing (2024) Vol. 186, pp. 109067-109067
Closed Access
Electronic and magnetic properties of MoI3 monolayer effected by point defects and rare earth metal doping
Guoxiang Chen, Wang Qu, Qi Zhang, et al.
Journal of Physics and Chemistry of Solids (2024), pp. 112508-112508
Closed Access
Guoxiang Chen, Wang Qu, Qi Zhang, et al.
Journal of Physics and Chemistry of Solids (2024), pp. 112508-112508
Closed Access