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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Giant tunneling magnetoresistance in atomically thin VSi2N4/MoSi2N4/VSi2N4 magnetic tunnel junction
Qingyun Wu, L. K. Ang
Applied Physics Letters (2022) Vol. 120, Iss. 2
Closed Access | Times Cited: 32

Showing 1-25 of 32 citing articles:

Emerging Versatile Two‐Dimensional MoSi2N4 Family
Yan Yin, Qihua Gong, Min Yi, et al.
Advanced Functional Materials (2023) Vol. 33, Iss. 26
Open Access | Times Cited: 79
MA2Z4 family heterostructures: Promises and prospects
Che Chen Tho, San‐Dong Guo, Shi‐Jun Liang, et al.
Applied Physics Reviews (2023) Vol. 10, Iss. 4
Open Access | Times Cited: 63
Prediction of 2D XC2N4 (X= Ti, Mo, and W) monolayers with high mobility as an encouraging candidate for photovoltaic devices
Hamad Rahman Jappor, Ali Obies Muhsen Almayyali, Hamza A. Mezher, et al.
Surfaces and Interfaces (2024) Vol. 54, pp. 105261-105261
Closed Access | Times Cited: 29
Recent Advances in Two-Dimensional Ferromagnetic Materials-Based van der Waals Heterostructures
Zhiheng Zhang, Rong Sun, Zhongchang Wang
ACS Nano (2025)
Closed Access | Times Cited: 3
2D WSe2/MoSi2N4 type-II heterojunction with improved carrier separation and recombination for photocatalytic water splitting
Yonghui Liu, Zhuo Jiang, Jun Jia, et al.
Applied Surface Science (2022) Vol. 611, pp. 155674-155674
Closed Access | Times Cited: 56
Tunable electronic properties and band alignments of MoSi2N4/GaN and MoSi2N4/ZnO van der Waals heterostructures
Jin Quan Ng, Qingyun Wu, L. K. Ang, et al.
Applied Physics Letters (2022) Vol. 120, Iss. 10
Open Access | Times Cited: 48
Spintronic Devices upon 2D Magnetic Materials and Heterojunctions
Zhiyan Jia, Mengfan Zhao, Qian Chen, et al.
ACS Nano (2025)
Open Access | Times Cited: 1
Electronic and Excitonic Properties of MSi2Z4 Monolayers
Tomasz Woźniak, Umm‐e‐Hani, Paulo E. Faria, et al.
Small (2023) Vol. 19, Iss. 19
Open Access | Times Cited: 18
Ultrathick MA2N4(M'N) Intercalated Monolayers with Sublayer‐Protected Fermi Surface Conduction States: Interconnect and Metal Contact Applications
Che Chen Tho, Xukun Feng, Liemao Cao, et al.
Advanced Physics Research (2024) Vol. 3, Iss. 7
Open Access | Times Cited: 6
Comparative study on the electronic and magnetic properties of two-dimensional Janus materials: h-SVSiN2 and t-SVSiN2
Ruixue Li, Sicong Zhu, Jun Ding
Physica E Low-dimensional Systems and Nanostructures (2025), pp. 116212-116212
Closed Access
Realizing sub-6-nm-channel high-performance spin field-effect transistors in lateral Sc2CHO/Sc2CHF/Sc2CHO heterojunctions
Shaoxian Wang, Ya-Qi Kong, Minglang Wang, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 8
Closed Access
Tuning the conducting types of VSi2N4 by van der Waals engineering
W. X. Li, Xiaohong Zheng, Chun-Sheng Liu, et al.
Physical Chemistry Chemical Physics (2025)
Closed Access
Tunable multiple nonvolatile resistance states in a MnSe-based van der Waals multiferroic tunnel junction
Xiaohui Guo, Lin Zhu, Zeng-Lin Cao, et al.
Physical Chemistry Chemical Physics (2024) Vol. 26, Iss. 4, pp. 3531-3539
Closed Access | Times Cited: 3
Large tunneling magnetoresistance and its high bias stability in Weyl half-semimetal based lateral magnetic tunnel junctions
Jianing Tan, Guowei Yang, Gang Ouyang
New Journal of Physics (2024) Vol. 26, Iss. 3, pp. 033047-033047
Open Access | Times Cited: 3
Large Magnetoresistance and Perfect Spin-Injection Efficiency in Two-Dimensional Strained VSi2N4 -Based Room-Temperature Magnetic-Tunnel-Junction Devices
Guohui Zhan, Zhilong Yang, Kun Luo, et al.
Physical Review Applied (2023) Vol. 19, Iss. 1
Closed Access | Times Cited: 8
Room temperature giant magnetoresistance in half-metallic Cr2C based two-dimensional tunnel junctions
Shreeja Das, Arnab Kabiraj, Santanu Mahapatra
Nanoscale (2022) Vol. 14, Iss. 26, pp. 9409-9418
Open Access | Times Cited: 10
A VSi2P4/FeCl2 van der Waals heterostructure: a two-dimensional reconfigurable magnetic diode
Jiangchao Han, Yulin Feng, Guoying Gao
Physical Chemistry Chemical Physics (2022) Vol. 24, Iss. 33, pp. 19734-19742
Closed Access | Times Cited: 9
Regulating the electronic properties of the WGe2N4 monolayer by adsorption of 4d transition metal atoms towards spintronic devices
Jin-Lan Sun, Mi‐Mi Dong, Yue Niu, et al.
Physical Chemistry Chemical Physics (2023) Vol. 25, Iss. 38, pp. 26270-26277
Closed Access | Times Cited: 5
Effects of crystal deformation on spin-valley interplay and topological phase transition: a case study on VSi2X4 (X = N or P) monolayers
Zhenning Sun, Xinru Li, Zhuojun Zhao, et al.
Journal of Materials Chemistry C (2023) Vol. 11, Iss. 29, pp. 9815-9824
Closed Access | Times Cited: 4
Schottky diodes based on in-plane TaSi2N4–WGe2N4 and TaSi2N4–MoGe2N4 heterojunctions
Yue-Hong Liu, Wei-Kang Zhang, Mi‐Mi Dong, et al.
Chinese Journal of Physics (2024) Vol. 90, pp. 1067-1075
Closed Access | Times Cited: 1
Highly tunable electronic properties in γ-XSe (X = Ge and Sn) bilayer with strain and electric field
Qingyun Wu, L. K. Ang
Nano Express (2024) Vol. 5, Iss. 2, pp. 025004-025004
Open Access | Times Cited: 1
Multifunctional near-infrared polarized photodetector driven by the anisotropic photogalvanic effect in a two-dimensional MnSSe/TaIrS4/MnSSe magnetic tunnel junction
Degao Xu, Jianing Tan, Meng Ge, et al.
Physical Review Applied (2024) Vol. 22, Iss. 5
Closed Access | Times Cited: 1
Capacitance for fractal-like disordered dielectric slab
Samra Kanwal, Chun Yun Kee, Samuel Y. W. Low, et al.
Journal of Applied Physics (2022) Vol. 132, Iss. 2
Open Access | Times Cited: 6
Giant tunnel magnetoresistance in two-dimensional van der Waals magnetic tunnel junctions: Ag/CrI3/MoSi2N4/
Hao Liu, Pan Wang, Yixin Zong, et al.
Physical review. B./Physical review. B (2022) Vol. 106, Iss. 10
Closed Access | Times Cited: 6
Two dimensional GeO2/MoSi2N4 van der Waals heterostructures with robust type-II band alignment
Xueping Li, Peize Yuan, Lin Li, et al.
Frontiers of Physics (2022) Vol. 18, Iss. 1
Closed Access | Times Cited: 6
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