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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel
Penghui He, Chunchun Ding, Xuming Zou, et al.
Applied Physics Letters (2022) Vol. 121, Iss. 19
Closed Access | Times Cited: 18

Showing 18 citing articles:

Heterojunction oxide thin film transistors: a review of recent advances
Juhyeok Lee, Dae Sung Chung
Journal of Materials Chemistry C (2023) Vol. 11, Iss. 16, pp. 5241-5256
Closed Access | Times Cited: 25
Continuous Growth of Crystalline InGaZnO on InLaO by Spray Pyrolysis for High‐Performance Thin‐Film Transistors with Excellent Stability
Arqum Ali, Md Mobaidul Islam, Jin Jang
Advanced Materials Technologies (2024) Vol. 9, Iss. 7
Closed Access | Times Cited: 3
A flexible phototransistor with simultaneous high mobility and detectivity
Peng Xiao, Jianrong Lin, Yubu Zhou, et al.
Applied Physics Reviews (2025) Vol. 12, Iss. 1
Closed Access
Thickness combination effects of dual active layers on the performances of InZnO/InSnZnO TFTs
Xi Zhang, Bin Liu, Shuo Zhang, et al.
Materials Science in Semiconductor Processing (2025) Vol. 194, pp. 109551-109551
Closed Access
Effects of different contents yttrium doping on the electrical performance and stability of bilayer IZO/IYZO thin-film transistors
Xiaocheng Ma, Ablat Abliz, Da Wan, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 14
Closed Access
Highly stable InZnSnTbOX thin-film transistors
Yan Wang, Penghui He, Shiyue Zuo, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 17
Closed Access
High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
Chun-Kuei Chen, Sonu Hooda, Zihang Fang, et al.
IEEE Transactions on Electron Devices (2023) Vol. 70, Iss. 4, pp. 2098-2105
Open Access | Times Cited: 8
Enhanced electrical performance of InGaSnO thin-film transistors by designing a dual-active-layer structure
Zhenyu Han, Jiajun Han, Ablat Abliz
Applied Surface Science (2023) Vol. 648, pp. 158995-158995
Closed Access | Times Cited: 7
Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure
Xiaoming Huang, Chen Chen, Fei Sun, et al.
Micromachines (2024) Vol. 15, Iss. 4, pp. 512-512
Open Access | Times Cited: 2
Significant Suppression of Dark Current in a Surface Acoustic Wave Assisted MoS2 Photodetector
Qianru Zhao, Haoran Yan, Xudong Wang, et al.
Advanced Electronic Materials (2023) Vol. 9, Iss. 12
Open Access | Times Cited: 6
Improved Performance and Bias Stability of Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Enabled by an Oxygen‐Compensated Capping Layer
Zhenyuan Xiao, Jidong Jin, Jeongho Lee, et al.
physica status solidi (a) (2023) Vol. 221, Iss. 2
Closed Access | Times Cited: 4
Aqueous solution-processed In2O3 TFTs using focused plasma in gas mixtures
Xiaolin Wang, Han-Lin Zhao, Fei Shan, et al.
Applied Surface Science (2024) Vol. 669, pp. 160576-160576
Closed Access | Times Cited: 1
Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels
Jih-Chao Chiu, Yuan-Ming Liu, Eknath Sarkar, et al.
IEEE Transactions on Electron Devices (2023) Vol. 70, Iss. 8, pp. 4194-4197
Closed Access | Times Cited: 1
Physical modeling for photo-capacitance characteristics of metal oxide TFTs
Haoyang Li, Wencai Zuo, Feifan Li, et al.
AIP Advances (2024) Vol. 14, Iss. 1
Open Access
Ultrathin Niobium‐Doped Indium Oxide Active Layer Enables High‐Performance Phototransistors for Driving Quantum‐Dot Light‐Emitting Diodes
Jianrong Lin, Wenhui Fang, Haixing Tan, et al.
Laser & Photonics Review (2024) Vol. 18, Iss. 11
Closed Access
Enhanced NBIS Stability of Oxide Thin-Film Transistors by Using Terbium-Incorporated Alumina
Penghui He, Shiyue Zuo, Wei Wang, et al.
IEEE Electron Device Letters (2024) Vol. 45, Iss. 9, pp. 1594-1597
Closed Access
Design of different oxygen content and high performance bilayer In2O3 thin-film transistors at room temperature for flexible electronics
Maojun Zheng, Ablat Abliz, Da Wan
Applied Surface Science (2024) Vol. 681, pp. 161510-161510
Closed Access
Investigation of the electrical performance and carrier transport mechanism for heterostructured bilayer In2O3/InGaSnO thin-film transistors
Zhenyu Han, Ablat Abliz
Applied Physics Letters (2024) Vol. 125, Iss. 23
Closed Access
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