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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities
Danhao Wang, Samuel Yang, Jiangnan Liu, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 15
Open Access | Times Cited: 14

Showing 14 citing articles:

Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation
Aiji Wang, Rui Chen, Yun Yu, et al.
Advanced Functional Materials (2025)
Closed Access | Times Cited: 3
E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks
Jiangnan Liu, Ding Wang, Md. Tanvir Hasan, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 1
Closed Access
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Stacy Ota, Takahiko Kawahara, et al.
Applied Physics Letters (2025) Vol. 126, Iss. 5
Closed Access
Polarization and domains in wurtzite ferroelectrics: Fundamentals and applications
Simon Fichtner, Georg Schönweger, Cheng‐Wei Lee, et al.
Applied Physics Reviews (2025) Vol. 12, Iss. 2
Open Access
Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential
Thomas Wostatek, V. Y. M. Rajesh Chirala, Nathan Stoddard, et al.
Materials (2024) Vol. 17, Iss. 13, pp. 3104-3104
Open Access | Times Cited: 2
Negative longitudinal piezoelectric effect and electric auxetic effect in ferroelectric HfO2 and related fluorite-structure ferroelectrics
Shenglong Zhang, Ling-Xu Zhao, Can Ji, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 20
Closed Access | Times Cited: 2
Effect of temperature on the performance of ScAlN/GaN high-electron mobility transistor
Md. Tanvir Hasan, Jiangnan Liu, Ding Wang, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 21
Closed Access | Times Cited: 2
Ferroelectricity Engineered AlScN Thin Films Prepared by Hydrogen Included Reactive Sputtering for Analog Applications
Si-Meng Chen, Hirofumi Nishida, Takuya Hoshii, et al.
(2024), pp. 29-30
Closed Access | Times Cited: 1
Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films
Feng Yang
Advanced Electronic Materials (2024)
Open Access | Times Cited: 1
Design of high-frequency surface acoustic wave resonators based on Al0.8Sc0.2N/AlN/Sapphire multilayer structure
Ji Li, Wei Guo, Fanping Meng, et al.
The European Physical Journal Special Topics (2024)
Closed Access | Times Cited: 1
Observation of ferroelectric domain walls using nonlinear spiral interferometry
Xuhui Sun, Hao Wu, Bing Gao, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 7
Closed Access
Composition and temperature dependent remanent polarization and coercive field in wurtzite AlScN ferroelectric memory materials
J. C. Martı́nez, Subhranu Samanta, Chen Liu, et al.
AIP Advances (2024) Vol. 14, Iss. 10
Open Access
Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxy
Shubham Mondal, Eitan Hershkovitz, Garrett Baucom, et al.
APL Materials (2024) Vol. 12, Iss. 11
Open Access
Diffuse Ferroelectric Phase Transition-Dependent Photovoltaic Effect in BiFeO3–BaTiO3-Based Solid Solutions
Jinquan Dou, Gaochao Zhao, Lei Xie, et al.
Inorganic Chemistry (2024)
Closed Access
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