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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Semimetal contacts to monolayer semiconductor: weak metalization as an effective mechanism to Schottky barrier lowering
Tong Su, Yueyan Li, Qianqian Wang, et al.
Journal of Physics D Applied Physics (2023) Vol. 56, Iss. 23, pp. 234001-234001
Open Access | Times Cited: 25

Showing 25 citing articles:

Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS2/Janus MoSSe van der Waals heterostructure
P. H. Nha, Chương V. Nguyen, Nguyen N. Hieu, et al.
Nanoscale Advances (2024) Vol. 6, Iss. 4, pp. 1193-1201
Open Access | Times Cited: 10
Ultrathick MA2N4(M'N) Intercalated Monolayers with Sublayer‐Protected Fermi Surface Conduction States: Interconnect and Metal Contact Applications
Che Chen Tho, Xukun Feng, Liemao Cao, et al.
Advanced Physics Research (2024) Vol. 3, Iss. 7
Open Access | Times Cited: 7
Tunable Schottky Barrier and Efficient Ohmic Contacts in MSi2N4 (M = Mo, W)/2D Metal Contacts
Wen Ai, Yongfei Shi, Xiaohui Hu, et al.
ACS Applied Electronic Materials (2023) Vol. 5, Iss. 10, pp. 5606-5613
Closed Access | Times Cited: 14
Enhancing the electronic and optical properties of the metal/semiconductor NbS2/BSe nanoheterostructure towards advanced electronics
SonBinh T. Nguyen, T. T. T. Huong, Nguyễn Xuân Ca, et al.
Nanoscale Advances (2024) Vol. 6, Iss. 5, pp. 1565-1572
Open Access | Times Cited: 4
Controllable electronic properties, contact barriers and contact types in a TaSe2/WSe2 metal–semiconductor heterostructure
Son T. Nguyen, Cuong Q. Nguyen, Nguyen N. Hieu, et al.
Physical Chemistry Chemical Physics (2024) Vol. 26, Iss. 12, pp. 9657-9664
Closed Access | Times Cited: 4
Suppressing Thermal Tail by Dirac States and High Density of States in Two-Dimensional Ag2S toward Low-Power Electronics
Chuyao Chen, Wenhan Zhou, Jialin Yang, et al.
ACS Materials Letters (2024) Vol. 6, Iss. 5, pp. 2065-2071
Closed Access | Times Cited: 4
Antimony–Platinum Modulated Contact Enabling Majority Carrier Polarity Selection on a Monolayer Tungsten Diselenide Channel
Yu-Tung Lin, Ching-Hao Hsu, Ang‐Sheng Chou, et al.
Nano Letters (2024) Vol. 24, Iss. 29, pp. 8880-8886
Open Access | Times Cited: 4
Electrical contact between 2D material NbS2 and WSSe
Jingjun Chen, Zelong Ma, Danni Wang, et al.
Physica E Low-dimensional Systems and Nanostructures (2025), pp. 116179-116179
Closed Access
Toward Phonon-Limited Transport in Two-Dimensional Transition Metal Dichalcogenides by Oxygen-Free Fabrication
Subhrajit Mukherjee, Shuhua Wang, Dasari Venkatakrishnarao, et al.
ACS Nano (2025)
Closed Access
Anisotropic band alignment and transport in TMDC junctions with 1T’–2H edge contacts
Shan Jiang, Huan Wang, Xiaojie Liu, et al.
Results in Physics (2025), pp. 108271-108271
Open Access
Designing CMOS compatible efficient ohmic contacts to WSi2N4via surface-engineered Mo2B monolayer electrodes
Liemao Cao, Xiaohui Deng, Zhenkun Tang, et al.
Journal of Materials Chemistry C (2023) Vol. 12, Iss. 2, pp. 648-654
Closed Access | Times Cited: 7
First-principles study on the electronic properties and Schottky barrier of WC/ WS2 and WC/ WSe2 heterostructures
Jiayang Wang, Alexander Sredenschek, David Emanuel Sanchez, et al.
Physical Review Materials (2024) Vol. 8, Iss. 4
Closed Access | Times Cited: 2
The rise of semi-metal electronics
Enzi Zhai, Tianyu Liang, Ruizi Liu, et al.
Nature Reviews Electrical Engineering (2024) Vol. 1, Iss. 8, pp. 497-515
Closed Access | Times Cited: 2
Topological van der Waals Contact for Two-Dimensional Semiconductors
Soheil Ghods, Hyunjin Lee, Jun‐Hui Choi, et al.
ACS Nano (2024)
Closed Access | Times Cited: 2
Ab initio molecular dynamics study of the local structures and migration behaviors of liquid Sb-based alloys
Zongbo Li, Yaxing Li, Feng Yun, et al.
Journal of Physics D Applied Physics (2023) Vol. 57, Iss. 11, pp. 115303-115303
Closed Access | Times Cited: 5
Large area van der Waals MoS2–WS2 heterostructures for visible-light energy conversion
Matteo Gardella, Giorgio Zambito, Giulio Ferrando, et al.
RSC Applied Interfaces (2024) Vol. 1, Iss. 5, pp. 1001-1011
Open Access | Times Cited: 1
Strong hybridization of Nb2C with MoS2: a way to reduce contact resistance
Jinxin Zan, Huan Wang, Bairui Tao, et al.
Journal of Physics D Applied Physics (2024) Vol. 57, Iss. 32, pp. 325103-325103
Closed Access
Achieving ultra-low contact barriers in MX2/SiH (M = Nb, Ta; X = S, Se) metal–semiconductor heterostructures: first-principles prediction
Son T. Nguyen, Chương V. Nguyen, Huynh V. Phuc, et al.
Nanoscale Advances (2024) Vol. 6, Iss. 19, pp. 4900-4906
Open Access
Unveiling Versatile Electronic Properties and Contact Features of Metal–Semiconductor Graphene/γ-Ge2SSe van der Waals Heterostructures
Tuan V. Vu, A. I. Kartamyshev, Thi H. Ho, et al.
Langmuir (2024)
Closed Access
Layer-dependent Schottky contact atTaX2–BY (X=S, Se, T; Y = P, As, Sb) van der Waals interfaces
INZMAM UL HAQ, Arij Mustaqeem, Basit Ali, et al.
Nanoscale Advances (2024)
Open Access
Achieving Ohmic Contacts in NbS2/MoSe2 van der Waals Heterostructure: A First‐Principles Study
Nguyen Dang Khang, Cuong Q. Nguyen, Chương V. Nguyen
Advanced Theory and Simulations (2023) Vol. 7, Iss. 3
Closed Access | Times Cited: 1
Growth and Photoresponse of WS2/MoSe2 Lateral Heterostructure
Mingyuan Sheng, Chang Xi, Xiaojun Mao, et al.
Advanced Electronic Materials (2024) Vol. 10, Iss. 8
Open Access
Electronic properties of InSe/CNT heterojunctions with the modulation of electric field and vacancy defects
Danni Wang, Zelong Ma, Yusheng Wang, et al.
Computational Materials Science (2024) Vol. 246, pp. 113339-113339
Closed Access
Monolayer nodal line semimetal AgTe as gate-reconfigurable ‘cold’ Ohmic contact to 2D semiconductors MoSi2N4 and WSi
Tong Su, Yueyan Li, Weiwei Zhao, et al.
Materials Today Electronics (2024) Vol. 10, pp. 100123-100123
Open Access
Computational Design of Two-Dimensional Semiconductors and Heterostructures for Sustainable Electronics Applications
Yee Sin Ang
(2023), pp. 688-689
Closed Access
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