OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation
Soumen Mazumder, Zhan-Gao Wu, Po Cheng Pan, et al.
Semiconductor Science and Technology (2021) Vol. 36, Iss. 9, pp. 095003-095003
Closed Access | Times Cited: 5
Soumen Mazumder, Zhan-Gao Wu, Po Cheng Pan, et al.
Semiconductor Science and Technology (2021) Vol. 36, Iss. 9, pp. 095003-095003
Closed Access | Times Cited: 5
Showing 5 citing articles:
Near-Ideal Subthreshold Swing in InAlN/GaN Schottky Gate High Electron Mobility Transistor Using Carbon-Doped GaN Buffer
Sujan Sarkar, Ramdas P. Khade, Ajay Shanbhag, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 8, pp. 4408-4413
Closed Access | Times Cited: 8
Sujan Sarkar, Ramdas P. Khade, Ajay Shanbhag, et al.
IEEE Transactions on Electron Devices (2022) Vol. 69, Iss. 8, pp. 4408-4413
Closed Access | Times Cited: 8
Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors
Xin Luo, Peng Cui, Handoko Linewih, et al.
Journal of Physics and Chemistry of Solids (2024) Vol. 187, pp. 111870-111870
Closed Access | Times Cited: 1
Xin Luo, Peng Cui, Handoko Linewih, et al.
Journal of Physics and Chemistry of Solids (2024) Vol. 187, pp. 111870-111870
Closed Access | Times Cited: 1
Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT
Soumen Mazumder, Parthasarathi Pal, Kuan-Wei Lee, et al.
Materials (2022) Vol. 15, Iss. 24, pp. 9067-9067
Open Access | Times Cited: 5
Soumen Mazumder, Parthasarathi Pal, Kuan-Wei Lee, et al.
Materials (2022) Vol. 15, Iss. 24, pp. 9067-9067
Open Access | Times Cited: 5
Positive Shifting of Vth with Enhanced DC Performance in AlGaN/GaN Schottky-Gate HEMT through Optimized UV/O3 Treated Gate Interface and Thermal Engineering
Soumen Mazumder, Zhan-Gao Wu, YeongâHer Wang
ECS Journal of Solid State Science and Technology (2022) Vol. 11, Iss. 6, pp. 065002-065002
Open Access | Times Cited: 1
Soumen Mazumder, Zhan-Gao Wu, YeongâHer Wang
ECS Journal of Solid State Science and Technology (2022) Vol. 11, Iss. 6, pp. 065002-065002
Open Access | Times Cited: 1
Influence of Post Fabrication Annealing on Device Performance of Inaln/Gan High Electron Mobility Transistors
Xin Luo, Peng Cui, Handoko Linewih, et al.
(2023)
Closed Access
Xin Luo, Peng Cui, Handoko Linewih, et al.
(2023)
Closed Access
