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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

The growth and expansive applications of amorphous Ga2O3
Zhaoying Xi, Lili Yang, Lincong Shu, et al.
Chinese Physics B (2023) Vol. 32, Iss. 8, pp. 088502-088502
Closed Access | Times Cited: 21

Showing 21 citing articles:

Oxide Semiconductor Memristor‐Based Optoelectronic Synaptic Devices With Quaternary Memory Storage
Jeong‐Hyeon Kim, Hye Jin Lee, Hee‐Jin Kim, et al.
Advanced Electronic Materials (2024) Vol. 10, Iss. 7
Open Access | Times Cited: 24
Multifunctional solar‐blind ultraviolet photodetectors based on p‐PCDTBT/n‐Ga2O3 heterojunction with high photoresponse
Yifei Wang, Zhenhua Lin, Jingli Ma, et al.
InfoMat (2023) Vol. 6, Iss. 2
Open Access | Times Cited: 30
Piezoelectricity Enhanced Self-Powered Solar-Blind Ultraviolet Photodetectors Based on Ga2O3/ZnO Heterojunction
Hongbin Wang, Jiangang Ma, Peng Li, et al.
IEEE Electron Device Letters (2024) Vol. 45, Iss. 4, pp. 546-549
Closed Access | Times Cited: 7
Plasma surface treatment of amorphous Ga2O3 thin films for solar-blind ultraviolet photodetectors
Bohan Xiao, Baohong Liu, Xiyao He, et al.
Applied Surface Science (2024) Vol. 678, pp. 161146-161146
Closed Access | Times Cited: 5
Step-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire
Jinggang Hao, Yanfang Zhang, Yijun Zhang, et al.
Chinese Physics B (2024) Vol. 33, Iss. 8, pp. 086104-086104
Open Access | Times Cited: 4
Performance improvement of self-powered n-ZnGaO/p-Si heterojunction ultraviolet photodetector using plasma-enhanced atomic layer deposition
Chen Wang, Hui-Chen Fan, Chenhao Zhou, et al.
Surface and Coatings Technology (2025) Vol. 497, pp. 131780-131780
Closed Access
Effect of buffer layer on electrical and photoelectric performance of amorphous Ga2O3 MOSFETs on SiO2/Si substrate
Shaoqing Wang, Yan Zhao, Feilong Jia, et al.
Materials Science and Engineering B (2025) Vol. 316, pp. 118104-118104
Closed Access
Stable, high-performance vertical heterojunction ultraviolet photodetectors with Ga2O3-protected Ag nanowires window electrode
Xingyuan Yu, Yujie Peng, Di Zhang, et al.
ChemPhysMater (2025)
Open Access
Low-Voltage Gallium Oxide Memristor with Enhanced Cyclic Endurance, Stability, and Memory Window
Raufur Rahman Khan, Oh‐Hyung Kwon, Avishek Das, et al.
ACS Applied Electronic Materials (2025)
Closed Access
Study on PECVD-hetero-grown β-Ga2O3 thin film and temperature-modulated solar-blind UV photodetection
Zhaoying Xi, Lili Yang, Zeng Liu, et al.
Journal of Physics D Applied Physics (2023) Vol. 57, Iss. 8, pp. 085101-085101
Closed Access | Times Cited: 9
Raman spectrum and phonon thermal transport in van der Waals semiconductor GaPS4
Sihan Yan, Zeng Liu, Jia‐Han Zhang, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 2
Closed Access | Times Cited: 2
Fast response self-powered solar-blind UV photodetector based on NiO/Ga2O3 p-n junction
Jinpei Wang, Qing Li, Wei Mi, et al.
Materials Science in Semiconductor Processing (2024) Vol. 186, pp. 109084-109084
Closed Access | Times Cited: 2
Gallium oxide cantilevered thin film-based solar-blind photodetector and its arc detection applications
Yu Zhang, R.B. Liu, Jingyang Zhang, et al.
Acta Physica Sinica (2024) Vol. 73, Iss. 9, pp. 098501-098501
Open Access | Times Cited: 1
Layer-number parity-dependent oscillatory spin transport in β -Ga2O3 magnetic tunnel junctions
Sihan Yan, Zeng Liu, Shan Li, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 15
Open Access | Times Cited: 1
Probing electronic and dielectric properties of ultrathin Ga2O3/Al2O3 atomic layer stacks made with in vacuo atomic layer deposition
Aafiya, Angelo Marshall, Berg Dodson, et al.
Journal of Applied Physics (2024) Vol. 136, Iss. 2
Open Access | Times Cited: 1
Effects of pressure difference and temperature on the α-Ga₂O₃ growth by mist chemical vapor deposition
Chenrui Zhang, Youting Wu, Yanbin Li, et al.
Optical Materials Express (2024) Vol. 14, Iss. 11, pp. 2728-2728
Open Access | Times Cited: 1
Research on the carrier transmission distance of a-Ga2O3 solar-blind photodetector
Haoda Li, Dayong Jiang, Man Zhao, et al.
2022 International Conference on Optoelectronic Information and Functional Materials (OIFM 2022) (2024), pp. 21-21
Closed Access
Enhancing photo-response performance through ultrathin Al2O3 modification at the p-SnO2:Al/n-GaN heterojunction interface
Hongyu Shi, Rui Deng, Dayong Jiang, et al.
Optical Materials (2024) Vol. 156, pp. 115950-115950
Closed Access
Strain tunable excitonic optical properties in monolayer Ga2O3
Hao-Lei 浩磊 Cui 崔, Zhen 真 Quan 权, Shu-Dong 舒东 Wang 王
Chinese Physics B (2024) Vol. 33, Iss. 10, pp. 107104-107104
Closed Access
Unveiling anharmonic scattering in van der Waals semiconductor GaPS4 through Raman Spectroscopy and theoretical calculation
Sihan Yan, Jingpeng Zhang, Jiahan Zhang, et al.
iScience (2024) Vol. 27, Iss. 11, pp. 111040-111040
Open Access
High-performance Ga2O3-based solar-blind UV photodetectors developed with low fabricating and operating temperature
Yan Chen, Peizhi Xu, Huihao Li, et al.
Optics Express (2024) Vol. 33, Iss. 3, pp. 4978-4978
Open Access
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