OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!
If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.
Requested Article:
Advances of embedded resistive random access memory in industrial manufacturing and its potential applications
Z. G. Wang, Yixian Song, Guobin Zhang, et al.
International Journal of Extreme Manufacturing (2024) Vol. 6, Iss. 3, pp. 032006-032006
Open Access | Times Cited: 14
Z. G. Wang, Yixian Song, Guobin Zhang, et al.
International Journal of Extreme Manufacturing (2024) Vol. 6, Iss. 3, pp. 032006-032006
Open Access | Times Cited: 14
Showing 14 citing articles:
Recent Advances in Emerging Polarization‐Sensitive Materials: From Linear/Circular Polarization Detection to Neuromorphic Device Applications
Rong Lu, Yanran Li, Honglin Song, et al.
Advanced Functional Materials (2025)
Closed Access
Rong Lu, Yanran Li, Honglin Song, et al.
Advanced Functional Materials (2025)
Closed Access
Relaxor Antiferroelectric Dynamics for Neuromorphic Computing
Dongliang Yang, Yinan Lin, Weiwei Meng, et al.
Advanced Materials (2025)
Closed Access
Dongliang Yang, Yinan Lin, Weiwei Meng, et al.
Advanced Materials (2025)
Closed Access
Data encryption based on field effect transistors and memristors
Rumeng Yang, Huiqian Hu, Jianyuan Zhang, et al.
Deleted Journal (2025) Vol. 2, Iss. 1
Open Access
Rumeng Yang, Huiqian Hu, Jianyuan Zhang, et al.
Deleted Journal (2025) Vol. 2, Iss. 1
Open Access
The show must go on: a reliability assessment platform for resistive random access memory crossbars
Rebecca Pelke, Felix Staudigl, Niklas Thomas, et al.
Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences (2025) Vol. 383, Iss. 2288
Closed Access
Rebecca Pelke, Felix Staudigl, Niklas Thomas, et al.
Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences (2025) Vol. 383, Iss. 2288
Closed Access
Interface engineering for enhanced memristive devices and neuromorphic computing applications
Ming Xiao, Daozhi Shen, Jijie Huang
International Materials Reviews (2025)
Closed Access
Ming Xiao, Daozhi Shen, Jijie Huang
International Materials Reviews (2025)
Closed Access
Bottom electrode reactivity and bonding strength effect on resistive switching in HfO2-based RRAM
Sung-Woo Jung, Kyeong‐Bae Lee, Moon‐Soo Kim, et al.
Materials Science in Semiconductor Processing (2025) Vol. 192, pp. 109438-109438
Closed Access
Sung-Woo Jung, Kyeong‐Bae Lee, Moon‐Soo Kim, et al.
Materials Science in Semiconductor Processing (2025) Vol. 192, pp. 109438-109438
Closed Access
Microstructure-modulated conductive filaments in Ruddlesden-Popper perovskite-based memristors and their application in artificial synapses
Fu-Chiao Wu, Zhicheng Su, Yu‐Chieh Hsu, et al.
Materials Today Physics (2025), pp. 101708-101708
Closed Access
Fu-Chiao Wu, Zhicheng Su, Yu‐Chieh Hsu, et al.
Materials Today Physics (2025), pp. 101708-101708
Closed Access
The Critical Role of Materials and Device Geometry on Performance of RRAM and Memristor: Review
Mohammad Tauquir Alam Shamim Shaikh, Chowdam Venkata Prasad, Kyong Jae Kim, et al.
Materials Today Physics (2025), pp. 101715-101715
Closed Access
Mohammad Tauquir Alam Shamim Shaikh, Chowdam Venkata Prasad, Kyong Jae Kim, et al.
Materials Today Physics (2025), pp. 101715-101715
Closed Access
In-Depth Review and Comparative Analysis of DRAM-Based PUFs
Yuin Yee Chew, Wei Hong Lim, Jin Tan, et al.
IEEE Access (2025) Vol. 13, pp. 79367-79384
Open Access
Yuin Yee Chew, Wei Hong Lim, Jin Tan, et al.
IEEE Access (2025) Vol. 13, pp. 79367-79384
Open Access
Self-rectifying memristors with high rectification ratio and dynamic linearity for in-memory computing
Guobin Zhang, Z. G. Wang, Xuemeng Fan, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 13
Closed Access | Times Cited: 3
Guobin Zhang, Z. G. Wang, Xuemeng Fan, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 13
Closed Access | Times Cited: 3
Quantum Dots for Resistive Switching Memory and Artificial Synapse
Gyeongpyo Kim, Seoyoung Park, Sungjun Kim
Nanomaterials (2024) Vol. 14, Iss. 19, pp. 1575-1575
Open Access | Times Cited: 3
Gyeongpyo Kim, Seoyoung Park, Sungjun Kim
Nanomaterials (2024) Vol. 14, Iss. 19, pp. 1575-1575
Open Access | Times Cited: 3
Progress of emerging non-volatile memory technologies in industry
Markus Hellenbrand, Isabella Teck, Judith L. MacManus‐Driscoll
MRS Communications (2024) Vol. 14, Iss. 6, pp. 1099-1112
Open Access | Times Cited: 3
Markus Hellenbrand, Isabella Teck, Judith L. MacManus‐Driscoll
MRS Communications (2024) Vol. 14, Iss. 6, pp. 1099-1112
Open Access | Times Cited: 3
Event-Driven Stochastic Compact Model for Resistive Switching Devices
J. Suñé, Mireia Bargalló González, M. Saludes-Tapia, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 8, pp. 4649-4654
Open Access | Times Cited: 2
J. Suñé, Mireia Bargalló González, M. Saludes-Tapia, et al.
IEEE Transactions on Electron Devices (2024) Vol. 71, Iss. 8, pp. 4649-4654
Open Access | Times Cited: 2
Improving the switching behavior of TaOx/HfO2-based non-volatile memristors by embedded Ti and Pt nano-islands
Chunwei Huang, Zhaozhu Qu, Fanlin Long, et al.
Materials Science in Semiconductor Processing (2024) Vol. 184, pp. 108829-108829
Closed Access | Times Cited: 1
Chunwei Huang, Zhaozhu Qu, Fanlin Long, et al.
Materials Science in Semiconductor Processing (2024) Vol. 184, pp. 108829-108829
Closed Access | Times Cited: 1
Research on resistive switching characteristics of Cu/MgO/MoS<sub>2</sub>/Cu structure
Xin He, Peng Chen
Acta Physica Sinica (2024) Vol. 74, Iss. 2, pp. 028501-028501
Closed Access
Xin He, Peng Chen
Acta Physica Sinica (2024) Vol. 74, Iss. 2, pp. 028501-028501
Closed Access
