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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C
Takehiro Shimaoka, Meiyong Liao, Satoshi Koizumi
IEEE Electron Device Letters (2022) Vol. 43, Iss. 4, pp. 588-591
Closed Access | Times Cited: 14

Showing 14 citing articles:

Materials for high-temperature digital electronics
Dhiren K. Pradhan, David C. Moore, A. Matthew Francis, et al.
Nature Reviews Materials (2024) Vol. 9, Iss. 11, pp. 790-807
Closed Access | Times Cited: 11
Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics
Muhammad Mahmudul Hasan, Chunlei Wang, Nezih Pala, et al.
Nanomaterials (2024) Vol. 14, Iss. 5, pp. 460-460
Open Access | Times Cited: 10
Recent advances in diamond MOSFETs with normally off characteristics
Mingkun Li, Xueqia Zhang, Shuopei Jiao, et al.
Functional Diamond (2024) Vol. 4, Iss. 1
Open Access | Times Cited: 4
Synthesis, Surface Chemistry, and Applications of Non‐Zero‐Dimensional Diamond Nanostructures
Changli Li, Xin Jiang, Nianjun Yang
Small (2024)
Closed Access | Times Cited: 1
P-channel MOSFETs on phosphorous-doped n-type diamond
Wen Zhao, Satoshi Koizumi, Meiyong Liao
IEEE Electron Device Letters (2024) Vol. 45, Iss. 12, pp. 2268-2271
Closed Access | Times Cited: 1
Normally-off n-ZnO/p-diamond heterojunction field effect transistor with recessed gate and current distribution layer
Lin Wang, Pengfei Zhao, Liang He, et al.
Microelectronics Journal (2023) Vol. 142, pp. 105994-105994
Closed Access | Times Cited: 3
Free-Standing N-Type Phosphorus-Doped Diamond
Rémi Gillet, Ingrid Stenger, Subodh K. Gautam, et al.
(2024)
Closed Access
Oxidized-Silicon-Terminated Diamond p-FETs With SiO2-Filling Shallow Trench Isolation Structures
Yu Fu, Te Bi, Yu Hao Chang, et al.
IEEE Electron Device Letters (2023) Vol. 44, Iss. 11, pp. 1899-1902
Closed Access | Times Cited: 1
Hydrogen-Terminated Diamond Field-Effect Transistors With 1011 ON/ OFF Ratio Using an Al2O3/HfO2 Stacked Passivation Layer
Zhihao Chen, Xinxin Yu, Shuman Mao, et al.
IEEE Transactions on Electron Devices (2023) Vol. 71, Iss. 1, pp. 940-943
Closed Access | Times Cited: 1
Numerical investigation of diamond complementary logic integrated circuits
Yuesong Liang, Wei Wang, Tianlin Niu, et al.
Diamond and Related Materials (2024) Vol. 148, pp. 111460-111460
Closed Access
Free-standing n-type phosphorus-doped diamond
Rémi Gillet, Ingrid Stenger, Subodh K. Gautam, et al.
Diamond and Related Materials (2024) Vol. 151, pp. 111805-111805
Open Access
P-type NiOX dielectric-based CMOS inverter logic gate using enhancement-mode GaN nMOS and diamond pMOS transistors
Mahalaxmi Patil, Subrat Kumar Pradhan, Vivek K. Shukla, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 25
Closed Access
Graphene on Single‐Crystal Diamond for Electronic Applications: A Brief Review
Aisuluu Aitkulova, Saman Majdi, Nattakarn Suntornwipat, et al.
physica status solidi (a) (2024)
Open Access
The Electrical Properties of Schottky Barrier Diode Structures Based on HVPE Grown Sn Dopped Ga2O3 Layers
A.Yu. Ivanov, А.В. Кремлева, Sh. Sh. Sharofidinov
Reviews on advanced materials and technologies (2022) Vol. 4, Iss. 1, pp. 33-38
Open Access | Times Cited: 2
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