Open Access Helper

OpenAlex Citation Counts

OpenAlex Citations Logo

OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope
Jingli Wang, Lejuan Cai, Jiewei Chen, et al.
Science Advances (2021) Vol. 7, Iss. 44
Open Access | Times Cited: 59

Showing 1-25 of 59 citing articles:

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges
Phuong V. Pham, Srikrishna Chanakya Bodepudi, Khurram Shehzad, et al.
Chemical Reviews (2022) Vol. 122, Iss. 6, pp. 6514-6613
Open Access | Times Cited: 411
Two-dimensional devices and integration towards the silicon lines
Shuiyuan Wang, Xiaoxian Liu, Mingsheng Xu, et al.
Nature Materials (2022) Vol. 21, Iss. 11, pp. 1225-1239
Closed Access | Times Cited: 201
Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation
Pengfei Luo, Chang Liu, Jun Lin, et al.
Nature Electronics (2022) Vol. 5, Iss. 12, pp. 849-858
Closed Access | Times Cited: 113
Charge-transfer contacts for the measurement of correlated states in high-mobility WSe2
Jordan Pack, Yinjie Guo, Ziyu Liu, et al.
Nature Nanotechnology (2024) Vol. 19, Iss. 7, pp. 948-954
Closed Access | Times Cited: 23
Emerging memory electronics for non-volatile radiofrequency switching technologies
D S Kim, Sung Jin Yang, Nicolás Wainstein, et al.
Nature Reviews Electrical Engineering (2024) Vol. 1, Iss. 1, pp. 10-23
Open Access | Times Cited: 17
A general one-step plug-and-probe approach to top-gated transistors for rapidly probing delicate electronic materials
Laiyuan Wang, Peiqi Wang, Jin Huang, et al.
Nature Nanotechnology (2022) Vol. 17, Iss. 11, pp. 1206-1213
Closed Access | Times Cited: 54
Engineering electrode interfaces for telecom-band photodetection in MoS2/Au heterostructures via sub-band light absorption
Chengyun Hong, Saejin Oh, Vu Khac Dat, et al.
Light Science & Applications (2023) Vol. 12, Iss. 1
Open Access | Times Cited: 28
All‐Transfer Electrode Interface Engineering Toward Harsh‐Environment‐Resistant MoS2 Field‐Effect Transistors
Yonghuang Wu, Zeqin Xin, Zhibin Zhang, et al.
Advanced Materials (2023) Vol. 35, Iss. 18
Closed Access | Times Cited: 21
Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact
Chengzhi Yang, Cheng Jiang, Wencheng Niu, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 7
Closed Access | Times Cited: 7
Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses
Lei Zhang, Zhaochao Liu, Wei Ai, et al.
Nature Electronics (2024) Vol. 7, Iss. 8, pp. 662-670
Closed Access | Times Cited: 7
Atomic‐scale interface engineering for two‐dimensional materials based field‐effect transistors
Xiangyu Hou, Tengyu Jin, Yue Zheng, et al.
SmartMat (2023) Vol. 5, Iss. 4
Open Access | Times Cited: 15
Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction
Hongye Chen, Tianqing Wan, Yue Zhou, et al.
Advanced Functional Materials (2023) Vol. 34, Iss. 15
Closed Access | Times Cited: 15
J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications
Si Eun Yu, Han Joo Lee, Min‐gu Kim, et al.
ACS Nano (2024) Vol. 18, Iss. 17, pp. 11404-11415
Closed Access | Times Cited: 6
Boltzmann Switching MoS2 Metal–Semiconductor Field‐Effect Transistors Enabled by Monolithic‐Oxide‐Gapped Metal Gates at the Schottky–Mott Limit
Yeon Ho Kim, Wei Jiang, Donghun Lee, et al.
Advanced Materials (2024) Vol. 36, Iss. 29
Closed Access | Times Cited: 5
Two-dimensional materials-based integrated hardware
Zhuiri Peng, Runfeng Lin, Zheng Li, et al.
Science China Information Sciences (2023) Vol. 66, Iss. 6
Open Access | Times Cited: 11
Multifunctional Magnetic Oxide‐MoS2 Heterostructures on Silicon
Jian Yang, Liang Wu, Yanran Liu, et al.
Advanced Materials (2023) Vol. 35, Iss. 33
Open Access | Times Cited: 11
All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope
Jiayang Hu, Hanxi Li, Anzhe Chen, et al.
ACS Nano (2024) Vol. 18, Iss. 31, pp. 20236-20246
Closed Access | Times Cited: 4
Mechanical exfoliation of non-layered metal oxides into ultrathin flakes
Ruijie Li, Zhixin Yao, Zhenjiang Li, et al.
Nature Synthesis (2024)
Closed Access | Times Cited: 4
Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices
Xiongfang Liu, Kaijian Xing, Chi Sin Tang, et al.
Progress in Materials Science (2024), pp. 101390-101390
Closed Access | Times Cited: 4
2D semimetal with ultrahigh work function for sub-0.1 V threshold voltage operation of metal-semiconductor field-effect transistors
Tianjiao Zhang, Jialei Miao, Chun Chia Huang, et al.
Materials & Design (2023) Vol. 231, pp. 112035-112035
Open Access | Times Cited: 10
Universal transfer of full‐class metal electrodes for barrier‐free two‐dimensional semiconductor contacts
Mengyu Hong, Xiankun Zhang, Yu Geng, et al.
InfoMat (2023) Vol. 6, Iss. 1
Open Access | Times Cited: 10
Ultrafast hot carrier extraction and diffusion at the MoS 2 /Au van der Waals electrode interface
Chengyun Hong, Hyundong Kim, Ye Tao, et al.
Science Advances (2025) Vol. 11, Iss. 1
Closed Access
A Cascaded Duplex Organic Vertical Memory with Learning Rate Scheduling for Efficient Artificial Neural Network Training
Qinyong Dai, Mengjiao Pei, Ziqian Hao, et al.
Advanced Functional Materials (2025)
Closed Access
Capacitorless Dynamic Random Access Memory with 2D Transistors by One-Step Transfer of van der Waals Dielectrics and Electrodes
Jianmiao Guo, Ziyuan Lin, Xiangli Che, et al.
ACS Nano (2025)
Closed Access
Van der Waals Gap Enabled Robust Retention of MoS2 Floating‐Gate Memory for Logic‐In‐Memory Operations
Wencheng Niu, Xuming Zou, Lin Tang, et al.
Advanced Functional Materials (2025)
Closed Access
Page 1 - Next Page

Scroll to top