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OpenAlex Citation Counts

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OpenAlex is a bibliographic catalogue of scientific papers, authors and institutions accessible in open access mode, named after the Library of Alexandria. It's citation coverage is excellent and I hope you will find utility in this listing of citing articles!

If you click the article title, you'll navigate to the article, as listed in CrossRef. If you click the Open Access links, you'll navigate to the "best Open Access location". Clicking the citation count will open this listing for that article. Lastly at the bottom of the page, you'll find basic pagination options.

Requested Article:

Atomic-scale polarization switching in wurtzite ferroelectrics
Sebastián Calderón, John Hayden, Steven M. Baksa, et al.
Science (2023) Vol. 380, Iss. 6649, pp. 1034-1038
Open Access | Times Cited: 79

Showing 1-25 of 79 citing articles:

Atomic-level polarization reversal in sliding ferroelectric semiconductors
Fengrui Sui, Haoyang Li, Ruijuan Qi, et al.
Nature Communications (2024) Vol. 15, Iss. 1
Open Access | Times Cited: 33
Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15N
Niklas Wolff, Georg Schönweger, Isabel Streicher, et al.
Advanced Physics Research (2024) Vol. 3, Iss. 5
Open Access | Times Cited: 18
New-Generation Ferroelectric AlScN Materials
Yalong Zhang, Qiuxiang Zhu, Bobo Tian, et al.
Nano-Micro Letters (2024) Vol. 16, Iss. 1
Open Access | Times Cited: 17
Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation
Aiji Wang, Rui Chen, Yun Yu, et al.
Advanced Functional Materials (2025)
Closed Access | Times Cited: 3
Proximity ferroelectricity in wurtzite heterostructures
Chloe Skidmore, R. Jackson Spurling, John Hayden, et al.
Nature (2025)
Closed Access | Times Cited: 2
Switching it up: New mechanisms revealed in wurtzite-type ferroelectrics
Cheng‐Wei Lee, Keisuke Yazawa, Andriy Zakutayev, et al.
Science Advances (2024) Vol. 10, Iss. 20
Open Access | Times Cited: 15
Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities
Danhao Wang, Samuel Yang, Jiangnan Liu, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 15
Open Access | Times Cited: 14
Emerging materials and design principles for wurtzite-type ferroelectrics
Cheng‐Wei Lee, Naseem Ud Din, Keisuke Yazawa, et al.
Matter (2024) Vol. 7, Iss. 4, pp. 1644-1659
Open Access | Times Cited: 11
Kinetics of N‐ to M‐Polar Switching in Ferroelectric Al1−xScxN Capacitors
Roberto Guido, Haidong Lu, Patrick D. Lomenzo, et al.
Advanced Science (2024) Vol. 11, Iss. 16
Open Access | Times Cited: 10
Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications
Joseph Casamento, Steven M. Baksa, Drew Behrendt, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 8
Open Access | Times Cited: 9
Rethinking polarization in wurtzite semiconductors
Ding Wang, Danhao Wang, Samuel Yang, et al.
Applied Physics Letters (2024) Vol. 124, Iss. 26
Closed Access | Times Cited: 9
Realizing giant ferroelectricity in stable wz-Al1−xBxN alloys by controlling the microstructure and elastic constant
Jie Su, Zhengmao Xiao, Xinhao Chen, et al.
npj Computational Materials (2025) Vol. 11, Iss. 1
Open Access | Times Cited: 1
Electric field-induced domain structures in ferroelectric AlScN thin films
Niklas Wolff, Tim Grieb, Georg Schönweger, et al.
Journal of Applied Physics (2025) Vol. 137, Iss. 8
Open Access | Times Cited: 1
Thermal residual stress-dependent coercive field and polarization switching dynamics of Al0.75Sc0.25N ferroelectric films
Jinyang Sui, Dayu Zhou, Yi Tong, et al.
Materials Today Communications (2025), pp. 112078-112078
Closed Access | Times Cited: 1
Electric-field-induced domain walls in wurtzite ferroelectrics
Ding Wang, Danhao Wang, Mahlet Molla, et al.
Nature (2025)
Closed Access | Times Cited: 1
Defects and oxygen impurities in ferroelectric wurtzite Al1−xScxN alloys
Cheng‐Wei Lee, Naseem Ud Din, Geoff L. Brennecka, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 2
Closed Access | Times Cited: 8
Reactive sputtering of ferroelectric AlScN films with H2 gas flow for endurance improvement
Si-Meng Chen, Takuya Hoshii, Hitoshi Wakabayashi, et al.
Japanese Journal of Applied Physics (2024) Vol. 63, Iss. 3, pp. 03SP45-03SP45
Open Access | Times Cited: 7
Roadmap on low-power electronics
R. Ramesh, Sayeef Salahuddin, Suman Datta, et al.
APL Materials (2024) Vol. 12, Iss. 9
Open Access | Times Cited: 7
Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing
Jing Gao, Yu‐Chieh Chien, Lingqi Li, et al.
Small (2024) Vol. 20, Iss. 47
Closed Access | Times Cited: 6
Clarification of the spontaneous polarization direction in crystals with wurtzite structure
Simon Fichtner, M. Yassine, Chris G. Van de Walle, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 4
Closed Access | Times Cited: 5
Ferroelectric AlBN films by molecular beam epitaxy
Chandrashekhar Savant, Ved Gund, Kazuki Nomoto, et al.
Applied Physics Letters (2024) Vol. 125, Iss. 7
Open Access | Times Cited: 4
Aluminum-Nitride-Based Semiconductors: Growth Processes, Ferroelectric Properties, and Performance Enhancements
Luyi Wang, Jing Cheng, Ke Qu, et al.
Inorganics (2025) Vol. 13, Iss. 2, pp. 29-29
Open Access
Impact of film composition on crystal structure and ferroelectricity in (Al1−x−yGaxScy)N ternary wurtzite thin films
Reika Ota, Nana Sun, K. Okamoto, et al.
APL Materials (2025) Vol. 13, Iss. 4
Open Access
Experimental determination of giant polarization in wurtzite III-nitride semiconductors
Haotian Ye, Ping Wang, Rui Wang, et al.
Nature Communications (2025) Vol. 16, Iss. 1
Open Access
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